Transistor,
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | NTE |
| 包装说明 | , |
| Reach Compliance Code | unknown |
| 配置 | Single |
| 最大漏极电流 (Abs) (ID) | 0.003 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-609代码 | e0 |
| 工作模式 | ENHANCEMENT MODE |
| 极性/信道类型 | P-CHANNEL |
| 最大功率耗散 (Abs) | 0.3 W |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| ECG464 | ECG468 | ECG469 | ECG465 | ECG466 | ECG491 | ECG492 | |
|---|---|---|---|---|---|---|---|
| 描述 | Transistor, | Transistor, | Transistor, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Transistor, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | NTE | NTE | NTE | NTE | NTE | NTE | NTE |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | JUNCTION | JUNCTION | METAL-OXIDE SEMICONDUCTOR | JUNCTION | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 极性/信道类型 | P-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 0.3 W | 0.36 W | 0.36 W | 0.3 W | 0.36 W | 0.83 W | 0.6 W |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 配置 | Single | - | - | Single | - | Single | Single |
| 最大漏极电流 (Abs) (ID) | 0.003 A | - | - | 0.003 A | - | 0.28 A | 0.25 A |
| 工作模式 | ENHANCEMENT MODE | - | - | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
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