PRODUCT SPECIFICATION
DATE:12/20/2012
cosmo
ELECTRONICS CORPORATION
Photocoupler:
KT101Z
No. 61P04158
SHEET 1 OF 8
REV
1
4Pin Phototransistor Output ,Low Input Current ,
Long Creepage Mini-Flat Package.
●
Features
1. Halogen Free.
2. Pb free and RoHS compliant.
3. Temperature range -55℃ to 115℃.
4. High isolation voltage 5000Vrms.
5. Opaque type,SMD low profile 4 lead package.
6. Current transfer ratio.
(CTR : MIN.50% at I
F
=0.1mA VCE=5V)
7. 8mm outer creepage distance.
8. Low coupling capacitance.
9. Agency Approvals
• UL UL1577 / CUL C22.2 No.1 & NTC No.5
File No. E169586
• VDE EN 60747 , File No.40031267
• FMIKO EN 60065 , EN 60950
File No.FI26204 M1
• CQC GB4943 / GB8898-2011
File No. CQC11001057770,CQC11001057771
File No. CQC11001057773,CQC11001057775
●
Applications
1. Industrial controls.
2. Programmable controllers.
3. Switchmode power supplies,Battery equipment.
4. Office machine.
PRODUCT SPECIFICATION
DATE:12/20/2012
cosmo
ELECTRONICS CORPORATION
Photocoupler:
KT101Z
No. 61P04158
SHEET 2 OF 8
REV
1
1.
OUTSIDE DIMENSION : UNIT (mm)
cosmo
101Z
xxx
CTR Rank
Date Code
TOLERANCE :
±0.2mm
2. SCHEMATIC
:
TOP
VIEW
1
4
2
3
1.
2.
3.
4.
Anode
Cathode
Emitter
Collector
PRODUCT SPECIFICATION
DATE:12/20/2012
cosmo
ELECTRONICS CORPORATION
Photocoupler:
KT101Z
No. 61P04158
SHEET 3 OF 8
REV
1
●
Absolute Maximum Ratings(T
A
=25℃)
Parameter
Symbol
Forward current
I
F
Peak forward current
I
FP
Input
Reverse voltage
V
R
Power dissipation
P
D
Collector-emitter voltage
V
CEO
Emitter-collector voltage
V
ECO
Output
Collector current
I
C
Collector power dissipation
P
C
Total power dissipation
P
tot
Isolation voltage 1 minute
V
iso
Operating temperature
T
opr
Storage temperature
T
stg
Soldering temperature 10 second
T
sol
●
Electro-optical
Parameter
Rating
50
1
6
100
80
7
50
150
250
5000
-55 to +115
-55 to +125
260
Unit
mA
A
V
mW
V
V
mA
mW
mW
Vrms
℃
℃
℃
Characteristics(T
A
=25℃)
Symbol
Conditions
IF=10mA
VR=4V
V=0, f=1kH
Z
V
CE
=20V, I
F
=0
Forward voltage
Input Reverse current
Terminal capacitance
Collector dark current
Collector-emitter breakdown
Output voltage
Emitter-collector breakdown
voltage
Current transfer ratio
Transfer Collector-emitter saturation
charac- voltage
teristics Isolation resistance
Floating capacitance
Rise time
Fall time
●
Classification
V
F
I
R
C
t
I
CEO
MIN.
–
–
–
–
80
7
50
–
10
TYP. MAX. Unit
1.2
1.8
V
–
10
uA
30
250 pF
–
0.1 uA
-
-
–
0.1
10
0.6
11
11
11
BV
CEO
Ic=0.1mA, I
F
=0
BV
ECO
I
E
=0.1mA, I
F
=0
-
-
600
0.3
–
1.0
–
–
V
V
%
V
ohm
pF
us
us
CTR
I
F
=0.1mA,
V
CE
=5V
V
CE
(sat) I
F
=10mA, Ic=1mA
R
iso
C
f
tr
tf
DC500V, 40 to 60%RH
V=0, f=1MH
Z
5x10
–
–
Vcc=2V,Ic=2mA,RL=100ohm
–
table of current transfer
ratio is shown below.
CTR RANK
KT101ZA
KT101ZB
CTR(%)
63 TO 125
100 TO 200
PRODUCT SPECIFICATION
DATE:12/20/2012
cosmo
ELECTRONICS CORPORATION
Photocoupler:
KT101Z
Fig.2
1 0 0
IF = 0 .1 m A
VC E=5V
No. 61P04158
SHEET 4 OF 8
Diode Power Dissipation
vs. Ambient Temperature
REV
1
Fig.1
Relative Current Transfer Ratio
vs. Ambient Temperature
150
Relative Current Transfer Ratio(%)
Diode power dissipation PD (mW)
8 0
6 0
4 0
2 0
100
50
0
-5 5
0
25
50
75
115
- 5 5
0
2 5
5 0
7 5
1 0 0
1 2 5
Ambient temperature Ta(℃)
Ambient temperature Ta(℃)
Fig.3
Collector Power Dissipation
vs. Ambient Temperature
Fig.4
Total Power Dissipation vs.
Ambient
2 5 0
Temperature
Collector power dissipation Pc (mW)
2 0 0
1 5 0
1 0 0
5 0
0
- 5 5
0
2 5
5 5
7 5
1 0 0
1 2 5
Total power dissipation Ptot (mW)
2 0 0
1 5 0
1 0 0
5 0
0
- 5 5
0
2 5
5 5
7 5
1 0 0
1 2 5
Ambient temperature Ta(℃)
Ambient temperature Ta(
℃)
Fig.5
Current Transfer Ratio vs.
Forward Current
800
Fig.6
Forward Current vs. Forward Voltage
5 0 0
Current Transfer Ratio ( % )
700
600
500
400
300
200
100
0
0.1
0.5
1
2
5
Forward current IF (mA)
Ta=25
℃
VCE=5V
2 0 0
1 0 0
5 0
2 0
5
1 0
2
Ta=75
℃
50
℃
25
℃
0
℃
-25
℃
10
20
1
0
0 . 5
1 . 0
1 . 5
2 . 0
2 . 5
3 . 0
Forward Current IF (mA)
Forward Voltage VF (V)
PRODUCT SPECIFICATION
DATE:12/20/2012
cosmo
ELECTRONICS CORPORATION
Photocoupler:
KT101Z
Fig.8
V
C E
No. 61P04158
SHEET 5 OF 8
Collector Current vs.
Collector-Emitter Voltage
REV
1
Fig.7
1 0
- 5
Collector Dark Current vs.
Ambient Temperature
= 2 0 V
6
IF=10mA
5
4
3
2
0.5mA
1
0.1mA
0
0
1
2
3
4
5
6
7
8
9
1mA
5mA
Ta=25°C
Collector dark current ICEo (A)
1 0
- 6
1 0
-7
1 0
-8
1 0
-9
1
-
0
1 0
1
-
0
1 1
- 5 5
- 2 5
0
2 5
5 0
7 5
1 0 0
1 1 5
Ambient temperature Ta(℃)
Collector current Ic (mA)
Collector-Emitter voltage VCE(V)
Fig.9
Response Time vs.
Load Resistance
100
50
Fig.10
Response Time vs.
Load Resistance
100
Response Rise Time (us)
20
10
5
2
1
0 .5
0 .2
0 .1
0 .1
1
tr
Response Fall Time (us)
V ce=2V
Ic = 2 m A
T a=25°C
50
20
10
5
2
1
0 .5
0 .2
0 .1
10
V ce=2V
Ic = 2 m A
T a = 2 5 °C
tf
0 .1
1
10
Load Resistance RL(K ohm)
Load Resistance RL(K ohm)
Fig.11
Test Circuit For Response Time
Pulse Input
I
F
R
IN
V
CC
R
L
=100Ω
Input
Output
10%
90%
td
tr
ts
tf
Output
PW=100 μs
Duty Cycle=1/10
电子竞赛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
