Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Infineon(英飞凌) |
| 包装说明 | FLANGE MOUNT, S-XSFM-P3 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| 其他特性 | RADIATION HARDENED |
| 雪崩能效等级（Eas） | 500 mJ |
| 外壳连接 | ISOLATED |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 200 V |
| 最大漏极电流 (Abs) (ID) | 26 A |
| 最大漏极电流 (ID) | 26 A |
| 最大漏源导通电阻 | 0.11 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-254AA |
| JESD-30 代码 | S-XSFM-P3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | UNSPECIFIED |
| 封装形状 | SQUARE |
| 封装形式 | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 150 W |
| 最大脉冲漏极电流 (IDM) | 104 A |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | PIN/PEG |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| IRHM3250 | IRHM8250 | IRHM4250 | IRHM8250PBF | IRHM7250 | |
|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 符合 | 不符合 |
| 包装说明 | FLANGE MOUNT, S-XSFM-P3 | FLANGE MOUNT, S-XSFM-P3 | HERMETIC SEALED PACKAGE-3 | FLANGE MOUNT, S-XSFM-P3 | FLANGE MOUNT, S-XSFM-P3 |
| Reach Compliance Code | not_compliant | compliant | unknown | compliant | not_compliant |
| 其他特性 | RADIATION HARDENED | RADIATION HARDENED | RADIATION HARDENED | RADIATION HARDENED | RADIATION HARDENED |
| 雪崩能效等级（Eas） | 500 mJ | 500 mJ | 500 mJ | 500 mJ | 500 mJ |
| 外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 200 V | 200 V | 200 V | 200 V | 200 V |
| 最大漏极电流 (ID) | 26 A | 26 A | 26 A | 26 A | 26 A |
| 最大漏源导通电阻 | 0.11 Ω | 0.11 Ω | 0.11 Ω | 0.11 Ω | 0.11 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-254AA | TO-254AA | TO-254AA | TO-254AA | TO-254AA |
| JESD-30 代码 | S-XSFM-P3 | S-XSFM-P3 | S-XSFM-P3 | S-XSFM-P3 | S-XSFM-P3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| 封装形状 | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 104 A | 104 A | 104 A | 104 A | 104 A |
| 表面贴装 | NO | NO | NO | NO | NO |
| 端子形式 | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 厂商名称 | Infineon(英飞凌) | - | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) |
| ECCN代码 | EAR99 | EAR99 | EAR99 | - | EAR99 |
| 最大漏极电流 (Abs) (ID) | 26 A | 26 A | 26 A | - | 26 A |
| JESD-609代码 | e0 | e0 | e0 | - | e0 |
| 最大功率耗散 (Abs) | 150 W | 150 W | 150 W | - | 150 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | TIN LEAD | - | Tin/Lead (Sn/Pb) |
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