PPJT7800
20V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
Features
20 V
Current
1A
SOT-363
Unit: inch(mm)
R
DS(ON)
, V
GS
@4.5V, I
D
@1.0A<150mΩ
R
DS(ON)
, V
GS
@2.5V, I
D
@0.7A<215mΩ
R
DS(ON)
, V
GS
@1.8V, I
D
@0.3A<400mΩ
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
ESD Protected
Lead free in comply with EU RoHS 2011/65/EU directives.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case : SOT-363 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.0002 ounces, 0.006 grams
Marking : T00
Fig.161
(TOP VIEW)
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
(Note 4)
o
SYMBOL
V
DS
V
GS
I
D
I
DM
T
a
=25
o
C
Derate above 25
o
C
P
D
T
J
,T
STG
R
θJA
LIMIT
UNITS
V
V
A
A
mW
mW/
o
C
o
20
+8
1
4
350
2.8
-55~150
357
o
Operating Junction and Storage Temperature Range
Thermal resistance
-
Junction to Ambient
(Note 3)
C
C/W
July 10,2013-REV.00
Page 1
PPJT7800
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
I
S
V
SD
---
I
S
=1A, V
GS
=0V
-
-
0.87
1
1.2
A
V
td
(on)
tr
td
(off)
tf
V
DD
=10V, I
D
=1A,
V
GS
=4.5V,
R
G
=6Ω
(Note 1,2)
-
-
5.8
25.8
42
32
-
-
-
-
ns
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
V
DS
=10V, I
D
=1A,
V
GS
=4.5V
(Note 1,2)
V
DS
=10V, V
GS
=0V,
f=1.0MHZ
-
-
-
-
-
-
1.6
0.31
0.41
105
25
15
-
-
-
-
-
-
pF
nC
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
GS
=4.5V, I
D
=1A
V
GS
=2.5V, I
D
=0.7A
V
GS
=1.8V, I
D
=0.3A
V
DS
=20V, V
GS
=0V
V
GS
=+8V, V
DS
=0V
20
0.7
-
-
-
-
-
-
0.8
120
160
260
0.01
+2
-
1.1
150
215
400
1
+10
uA
uA
mΩ
V
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
o
NOTES:
1. Pulse width<300us, Duty cycle<2%
2.
3.
4.
Essentially independent of operating temperature typical characteristics.
R
ΘJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
The maximum current rating is package limited
July 10,2013-REV.00
Page 2
PPJT7800
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Dlode Characterlslcs
July 10,2013-REV.00
Page 3
PPJT7800
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Threshold Voltage Variation with Temperature.
Fig.9 Capacitance vs. Drain-Source Voltage.
July 10,2013-REV.00
Page 4
PPJT7800
PART NO PACKING CODE VERSION
PART NO PACKING
Package Type
CODE VERSION
PJT7800_R1_00001
PJT7800_R2_00001
SOT-363
SOT-363
3K pcs / 7” reel
10K pcs / 13” reel
T00
T00
Halogen free
Halogen free
Packing type
Marking
Version
MOUNTING PAD LAYOUT
July 10,2013-REV.00
Page 5
下载中心专版
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
