PPJT138K
50V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
Features
50 V
Current
350mA
SOT-363
Unit: inch(mm)
R
DS(ON)
, V
GS
@10V, I
D
@500mA<1.6Ω
R
DS(ON)
, V
GS
@4.5V, I
D
@200mA<2.5Ω
R
DS(ON)
, V
GS
@2.5V, I
D
@100mA<4.5Ω
Advanced Trench Process Technology
Specially Designed for Battery Operated Systems, Solid-
State Relays Drivers: Relay, Displays, Memories, etc.
ESD Protected
Lead free in comply with EU RoHS 2011/65/EU directives.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-363 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00021 ounces, 0.006 grams
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T
a
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
R
θJA
LIMIT
o
UNITS
V
V
mA
mA
mW
mW/
o
C
o
50
+20
350
1200
223
1.8
-55~150
560
o
Operating Junction and Storage Temperature Range
Thermal resistance
-
Junction to Ambient
(Note 3)
C
C/W
March 25,2013-REV.00
Page 1
PPJT138K
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
I
S
V
SD
---
I
S
=500mA, V
GS
=0V
-
-
0.86
500
1.5
mA
V
td
(on)
tr
td
(off)
tf
V
DD
=25V, I
D
=500mA,
V
GS
=10V,
R
G
=6Ω
(Note 1,2)
-
-
2.2
19.2
6.2
23
5
38
12
50
ns
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
V
DS
=25V, I
D
=250mA,
V
GS
=4.5V
(Note 1,2)
V
DS
=25V, V
GS
=0V,
f=1.0MHZ
-
-
-
-
-
-
0.63
0.2
0.23
-
-
-
1
-
-
50
10
5
pF
nC
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
V
GS
=0V,I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V,I
D
=500mA
V
GS
=4.5V,I
D
=200mA
V
GS
=2.5V,I
D
=100mA
V
DS
=50V,V
GS
=0V
V
GS
=+20V,V
DS
=0V
50
0.8
-
-
-
-
-
-
1.0
0.93
1.2
2.4
0.01
+3.0
-
1.5
1.6
2.5
4.5
1
+10
uA
uA
Ω
V
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
o
NOTES:
1. Pulse width<300us, Duty cycle<2%
2.
3.
Essentially independent of operating temperature typical characteristics.
R
ΘJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. mounted on a 1 inch square pad of copper
March 25,2013-REV.00
Page 2
PPJT138K
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Dlode Characterlslcs
March 25,2013-REV.00
Page 3
PPJT138K
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Breakdown Voltage Variation vs. Temperature
Fig.9 Threshold Voltage Variation with Temperature.
March 25,2013-REV.00
Page 4
PPJT138K
ORDER INFORMATION
Order Part Number
PJT138K_R1_00001
PJT138K_R2_00001
Package Type
SOT-363
SOT-363
Packing type
3K pcs / 7” reel
10K pcs / 13” reel
Marking
8KD
8KD
Version
Halogen free
Halogen free
MOUNTING PAD LAYOUT
March 25,2013-REV.00
Page 5
意法半导体-低功耗射频
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