DATA SHEET
TSP058A~TSP320A
AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE
FEATURES
• Protects by limiting voltages and shunting surge currents away from sensitive circuits
1.0(25.4) MIN.
DO-15
.034(.86)
.028(.71)
Unit: inch ( mm )
• Designed for telecommunications applications such as line cards, modems, PBX, FAX,
LAN,VHDSL
• Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68
• Low capacitance, High surge (A, B, C rating available), precise voltage limiting, Long life
MECHANICAL DATA
• Case: JEDEC DO-15 molded plastic
• Te r m i n a l s : P l a t e d A x i a l l e a d s , s o l d e r a b l e p e r
MIL-STD-750, Method 2026
• Polarity: Bi-directional
• Weight: 0.015 ounce, 0.4 gram
.300(7.6)
.230(5.8)
.140(3.6)
.104(2.6)
SUMMARY ELECTRICAL CHARACTERISTICS
Rated Repetitive
PeakOff-State
Voltage
Part Number
Max.
V
DRM
V
TSP058A
TSP065A
TSP075A
TSP090A
TSP120A
TSP140A
TSP160A
TSP190A
TSP220A
TSP275A
TSP320A
notes
NOTES:
1. Specific V
DRM
values are available by request.
2. Specific I
H
values are available by request.
3. All ratings and characteristics are at 25 °C unless otherwise specified.
4. V
DRM
applies for the life of the device. I
DRM
will be in spec during and following operation of the device.
5. V
BO1
is at 100V/msec, I
SC
=10A
pk
, V
OC
=1KV
pk
, 10/1000 Waveform
6. V
BO2
is at f = 60 Hz, I
SC
= 1 A
(RMS)
, Vac = 1KV
(RMS)
, R
L
= 1 KW, 1/2 AC cycle
DATE : SEP.02.2002
PAGE . 1
58
65
75
90
120
140
160
190
220
275
320
(1,3)
Breakover
Voltage
Max.
V
BO
@ I
BO
V
77
88
98
130
160
180
220
260
300
350
400
(3,5,6)
On-State
Voltage
Max.
V
T
@ 1A
V
5
5
5
5
5
5
5
5
5
5
5
(3)
Repetitive
Breakover Holding
Off-State Capacitance
PeakOff-State
Current Currnet (f = 1 MHz , Vac = 15 mV
RMS
)
Current
Max.
I
DRM
µA
5
5
5
5
5
5
5
5
5
5
5
(3)
Max.
I
BO
mA
800
800
800
800
800
800
800
800
800
800
800
(3)
Min.
I
H
mA
150
150
150
150
150
150
150
150
150
150
150
(2,3)
44
39
37
34
32
29
28
28
27
27
27
(3)
Typ.
pF
66
64
57
54
48
47
43
40
40
38
38
(3)
16
15
13
12
12
9
9
8
8
8
8
(3)
Max.
Typ.
pF
24
23
20
18
17
16
15
14
14
13
13
(3)
Max.
1.0(25.4) MIN.
C
O
@ 0 V
dc
C
O
@ 5 0 V
dc
CAPACITANCE CHARACTERISTICS
F = 1 MHz, V
ac
= 15 mV
rms
Off-State C apacitance
C
O
Part N umber
0 V dc
Typ.
TSP058A
TSP065A
TSP075A
TSP090A
TSP120A
TSP140A
TSP160A
TSP190A
TSP220A
TSP275A
TSP320A
44
39
37
34
32
29
28
28
27
27
27
Max.
66
64
57
54
48
47
43
40
40
38
38
Typ.
40
35
33
30
28
25
25
24
23
23
23
1 V dc
Max.
51
49
42
39
33
32
27
25
25
24
24
Typ.
36
31
29
26
24
21
21
20
19
19
19
pF
2 V dc
Max.
49
47
40
37
31
30
24
23
23
22
22
Typ.
33
28
26
23
21
18
18
17
16
16
16
5 V dc
Max.
44
42
35
32
26
25
20
18
18
17
17
Typ.
16
15
13
12
12
9
9
8
8
8
8
50 V dc
Max.
24
23
20
18
17
16
15
14
14
13
13
RATING AND CHARACTERISTIC CURVES
f=1 M
HZ
v
d
=15mV
RMS
AC
T
J
= 25 C
30
60
O
f=1 M
HZ
v
d
=15mV
RMS
AC
T
J
= 25 C
O
Capacitance (pF)
40
30
20
Capacitance (pF)
50
25
TSP220SA
V
D
=0 Volts DC
20
15
V
D
=50 Volts DC
10
0
50
100
150
200
250
300
350
10
5
0.1
1
10
100
V
DRM
Typical Capacitance v.s. Rated Repetitive Off-state Voltage
V
D
Off-state Voltage (V)
Typical Capacitance v.s. Off-state Voltage
100
10A, 10/1000 microseconds
TSP220SC
300
10
I
D,
Off-State Current (
m
A)
0.1
TSP220SB
I
H
, Holding Current (mA)
1
250
200
0.01
150
0.001
TSP220SA
0.0001
0
100
25
0
25
50
75
O
100
125
20
40
60
80
100
120
140 150
T
J
, Junction Temperature ( C)
Typical Holding Current
T
J
( C )
Typical Off-state Current v.s Junction Temperature
O
DATE : SEP.02.2002
PAGE . 2
RATING AND CHARACTERISTIC CURVES
10A, 10/1000 microseconds
-0.1
-1.0
10A, 10/1000 microseconds
Temperature Coefficient (mA/
o
C)
-1.0
Temperature Coefficient (mA/
o
C)
-25
0
25
50
75
100
125
-1.5
-1.5
-2.0
-2.0
-2.5
-2.5
-3.0
-3.0
-3.5
150
200
250
300
350
T
J
, Junction Temperature (
O
C)
Typical Holding Current Temperature Coefficient
T
J
, Junction Temperature (
O
C)
Typical Holding Current Temperature Coefficient
.16
Temperature Coefficient of V
DRM
, % /
o
C
0.14
0.12
0.1
0.08
50
100
150
200
o
250
300
350
Rated V
DRM
at T
J
=25 C (V)
Temperature Coefficient of V
DRM
IMPORTANT NOTICE
This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in
the application. It will help the customer's technical experts determine that the device is compatible and interchangeable with similar
devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and
information herein are subject to change without notice. New products and improvements in products and their characterization are
constantly in process. This provides a superior performing and the highest value product. The factory should be consulted for the
most recent information and for any special characteristics not described or specified.
© Copyright PanjIt International Inc. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and
may changed without notice. No liability will be accepted by the publisher for any consequence of its use.
Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
PanJit Internatioal Inc.
http://www.panjit.com.tw email: sales@panjit.com.tw
DATE : SEP.02.2002
PAGE . 3
SELECTION GUIDE
Follow these steps to select the proper Thyristor surge protector for your application:
1. Define the operating parameters for the circuit:
• Ambient operating temperature range
• Maximum telephone line operating current (highest battery and shortest copper loop)
• Maximum operating voltage: (Maximum DC bias + peak ringing voltage)
• Maximum surge current
• System voltage damage threshold
• Select device with an off-state voltage rating (V
DRM
) above the maximum operating voltage at the minimum operating temperature.
3. Select surge current ratings (I
PPS
and I
TSM
) ³ those which the application must withstand.
4. Verify that the minimum holding current of the device at the maximum ambient temperature is above the maximum dc current of the
system.
5. Verify that the maximum breakover voltage of the device is below the system damage threshold.
6. Verify that the circuit's ambient operating temperatures are within the device's operating temperature range.
7. Verify that the device's dimensions fit the application's space considerations.
8. Independently evaluate and test the suitability and performance of the device in the application
MAXIMUM SURGE RATINGS (T
J
= 25 °C UNLESS OTHERWISE NOTED)
Rating
Symbol
Short-Circuit Current Wave
Open-Circuit Voltage Wave
Value
Notes
2/10
µs
2/10
µs
175 A
8/20
µs
1.2/50
µs
150 A
10/160
µs
10/160
µs
100 A
Non-Repetitive Peak Pulse Current
I
PPS
5/310
µs
10/700
µs
85 A
10/560
µs
10/560
µs
70 A
10/1000
µs
10/1000
µs
50 A
(1,2,3,4)
Non-Repetitive Peak
On-State Surge Current
I
TSM
20A
(1,2,4,5,6)
Notes:
1. Thermal accumulation between successive surge tests is
not allowed.
2. The device under test initially must be in thermal
equilibrium with T
J
= 25 °C.
3. Test at 1 cycle, 60 Hz.
4. Surge ratings are non-repetitive because instantaneous
junction temperatures may exceed the maximum rated T
J
.
Nevertheless, devices will survive many surge applications
without degradation. Surge capability will not degrade over
a device's typical operating life.
5. Adjust the surge generator for optimum current-wave
accuracy when both voltage and current wave
specifications cannot be exactly met. The current wave is
more important than the voltage wave for accurate surge
evaluation.
6. The waveform is defined as A/B ms where:
A: (Virtual front time) = 1.25 X Rise time = 1.25 X (T
b
- T
a
)
B (Duration time to 50% level of Ipps) = T
1
- T
0
60%
% Ipps
100%
80%
40%
20%
0%
To Ta
Tb
Time
T1
DATE : SEP.02.2002
PAGE . 4
MAXIMUM THERMAL RATINGS
Rating
Storage Junction Temperature Range
Operating Junction Temperature Range
Operating Ambient Temperature Range
Notes:
PCB board mounted on minimum foot print.
Symbol
T
STG
T
J
T
a
Value
-50 to 150
-40 to 150
-40 to 65
Unit
O
C
C
C
O
O
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance Junction to Leads T
L
on tab adjacent to
plastic. Both leads soldered to identical pad sizes.
Symbol
R
θ
JL
Value
Max. 20
O
Unit
C/W
Notes:
The junction to lead thermal resistance represents a minimum limiting value with both leads soldered to a large near-infinite heatsink. The
junction to ambient thermal resistance depends strongly on board mounting conditions and typically is 3 to 6 times higher than the junction
to lead resistance. The data shown is to be used as guideline values for preliminary engineering.
ELECTRICAL CHARACTERISTICS (T
C
= 25°C UNLESS OTHERWISE NOTED)
Parameters
Repetitive Peak
Off-State Current
Breakover Current
Holding Current1
On-State Voltage
Notes:
Specific I
H
values are available by request.
Test Conditions
V
D
= rated V
DRM
f = 60 Hz, I
SC
= 1 Arms, V
ac
= 1 KVrms, R
L
= 1 K
Ω
, 1/2 AC cycle
10/1000
µ
s waveform, I
SC
= 10A, V
OC
= 62 V, R
L
= 400
Ω
I
T
= 1 A, Tw = 300
µ
s, 1 pulse
Symbol
I
DRM
I
BO
I
H
V
T
Min.
Max.
5
800
Unit
µA
mA
mA
150
5
V
DATE : SEP.02.2002
PAGE . 5
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