TSP058B - TSP320B
Breakover
Voltage
Max.
V
BO
@ I
BO
V
77
88
98
130
160
180
220
260
300
350
400
(3,5,6)
On-State
Voltage
Max.
V
T
@ 1A
V
5
5
5
5
5
5
5
5
5
5
5
(3)
Part Number
Max.
V
DRM
V
Max.
I
DRM
µA
5
5
5
5
5
5
5
5
5
5
5
(3)
Max.
I
BO
mA
800
800
800
800
800
800
800
800
800
800
800
(3)
Min.
I
H
mA
150
150
150
150
150
150
150
150
150
150
150
(2,3)
Typ.
pF
70
67
67
57
50
49
46
45
44
44
43
(3)
Max.
Typ.
pF
Max.
C
O
@ 0 V
dc
100
90
78
61
58
54
53
53
52
51
50
(3)
C
O
@ 5 0 V
dc
24
22
23
19
17
16
15
14
13
13
13
(3)
29
28
27
21
20
19
18
18
18
18
17
(3)
TSP058B
TSP065B
TSP075B
TSP090B
TSP120B
TSP140B
TSP160B
TSP190B
TSP220B
TSP275B
TSP320B
notes
58
65
75
90
120
140
160
190
220
275
320
(1,3)
NOTES:
1. Specific V
DRM
values are available by request.
2. Specific I
H
values are available by request.
3. All ratings and characteristics are at 25 °C unless otherwise specified.
4. V
DRM
applies for the life of the device. I
DRM
will be in spec during and following operation of the device.
5. V
BO1
is at 100V/msec, I
SC
=10A
pk
, V
OC
=1KV
pk
, 10/1000 Waveform
6. V
BO2
is at f = 60 Hz, I
SC
= 1 A
(RMS)
, Vac = 1KV
(RMS)
, R
L
= 1 KΩ, 1/2 AC cycle
Ver: June 2001
PAGE 1
TSP058B - TSP320B
PRELIMINARY
AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE
FEATURES
• Protects by limiting voltages and shunting surge currents away from sensitive circuits
• Designed for telecommunications applications such as line cards, modems, PBX, FAX,
LAN,VHDSL
• Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68
• Low capacitance, High surge (A, B, C rating available), precise voltage limiting, Long life
THYRISTOR
DO-15
SUMMARY ELECTRICAL CHARACTERISTICS
Rated Repetitive
PeakOff-State
Voltage
Repetitive
Breakover Holding
Off-State Capacitance
PeakOff-State
Current Currnet (f = 1 MHz , Vac = 15 mV
RMS
)
Current
TSP058B - TSP320B
8. Independently evaluate and test the suitability and performance of the device in the application
MAXIMUM SURGE RATINGS (T
J
= 25 ºC UNLESS OTHERWISE NOTED)
Rating
Symbol
Short-Circuit Current Wave
Open-Circuit Voltage Wave
Value
Notes
2/10
µs
2/10
µs
300 A
8/20
µs
1.2/50
µs
225 A
10/160
µs
10/160
µs
150 A
Non-Repetitive Peak Pulse Current
I
PPS
5/310
µs
10/700
µs
115 A
10/560
µs
10/560
µs
100 A
10/1000
µs
10/1000
µs
80 A
(1,2,3,4)
Non-Repetitive Peak
On-State Surge Current
I
TSM
30A
(1,2,4,5,6)
Notes:
1. Thermal accumulation between successive surge tests is
not allowed.
2. The device under test initially must be in thermal
equilibrium with T
J
= 25 °C.
3. Test at 1 cycle, 60 Hz.
4. Surge ratings are non-repetitive because instantaneous
junction temperatures may exceed the maximum rated T
J
.
Nevertheless, devices will survive many surge applications
without degradation. Surge capability will not degrade over
a device's typical operating life.
5. Adjust the surge generator for optimum current-wave
accuracy when both voltage and current wave
specifications cannot be exactly met. The current wave is
more important than the voltage wave for accurate surge
evaluation.
6. The waveform is defined as A/B ms where:
A: (Virtual front time) = 1.25 X Rise time = 1.25 X (T
b
- T
a
)
B (Duration time to 50% level of Ipps) = T
1
- T
0
60%
% Ipps
100%
80%
40%
20%
0%
To Ta
Tb
Time
T1
Ver: June 2001
PAGE 2
TSP058B - TSP320B
PRELIMINARY
SELECTION GUIDE
Follow these steps to select the proper Thyristor surge protector for your application:
1. Define the operating parameters for the circuit:
• Ambient operating temperature range
• Maximum telephone line operating current (highest battery and shortest copper loop)
• Maximum operating voltage: (Maximum DC bias + peak ringing voltage)
• Maximum surge current
• System voltage damage threshold
• Select device with an off-state voltage rating (V
DRM
) above the maximum operating voltage at the minimum operating temperature.
3. Select surge current ratings (I
PPS
and I
TSM
)
≥
those which the application must withstand.
4. Verify that the minimum holding current of the device at the maximum ambient temperature is above the maximum dc current of the
system.
5. Verify that the maximum breakover voltage of the device is below the system damage threshold.
6. Verify that the circuit's ambient operating temperatures are within the device's operating temperature range.
7. Verify that the device's dimensions fit the application's space considerations.
THYRISTOR
TSP058B - TSP320B
Characteristic
Thermal Resistance Junction to Leads T
L
on tab adjacent to
plastic. Both leads soldered to identical pad sizes.
Symbol
R
θ
JL
Value
Max. 20
O
Unit
C/W
Notes:
The junction to lead thermal resistance represents a minimum limiting value with both leads soldered to a large near-infinite heatsink. The
junction to ambient thermal resistance depends strongly on board mounting conditions and typically is 3 to 6 times higher than the junction
to lead resistance. The data shown is to be used as guideline values for preliminary engineering.
ELECTRICAL CHARACTERISTICS (T
C
= 25°C UNLESS OTHERWISE NOTED)
Parameters
Repetitive Peak
Off-State Current
Breakover Current
Holding Current1
On-State Voltage
V
D
= rated V
DRM
f = 60 Hz, I
SC
= 1 Arms, V
ac
= 1 KVrms, R
L
= 1 K
Ω
, 1/2 AC cycle
10/1000
µ
s waveform, I
SC
= 10A, V
OC
= 62 V, R
L
= 400
Ω
I
T
= 1 A, Tw = 300
µ
s, 1 pulse
Test Conditions
Symbol
I
DRM
I
BO
I
H
V
T
150
5
Min.
Max.
5
800
Unit
µA
mA
mA
V
Notes:
Specific I
H
values are available by request.
Ver: June 2001
PAGE 3
TSP058B - TSP320B
PRELIMINARY
MAXIMUM THERMAL RATINGS
Rating
Storage Junction Temperature Range
Operating Junction Temperature Range
Operating Ambient Temperature Range
Notes:
PCB board mounted on minimum foot print.
THYRISTOR
Symbol
T
STG
T
J
T
a
Value
-50 to 150
-40 to 150
-40 to 65
Unit
O
C
C
C
O
O
THERMAL CHARACTERISTICS
TSP058B - TSP320B
V
BR
_I
Characteristic
V
BO
I
BO
I
H
I
T
V
T
Symbol
Breakover Voltage
Breakover Current
Holding Current
On-state current
On-state voltage
Value
Maximum voltage across the device in or at breakdown measured
under a specified voltage and current rate of rise
Instantaneous current flowing at the breakover voltage (V
BO
)
Minimum current required to maintain the device in the on-state
Current through the device in the on-state condition
Voltage across the device in the on-state condition at a specified
current (I
T
)
The highest instantaneous value of the off-state voltage, including all
repetitive transient voltages but excluding all nonrepetitive transient
voltages
The maximum (peak) value of current that results from the application
of V
DRM
Rated maximum value of peak impulse current of specified amplitude
and waveshape that may be applied without damage to the device
under test
Rated value of the rate of rise of current that the device can withstand
without damage.
The maximum rate of rise of voltage (belowV
DRM
) that will not cause
switching from the off-state to the on-state.
V
DRM
Rated Repetitive Peak Off-State Voltage
I
DRM
Repetitive Peak Off-State Current
I
PPS
Non-Repetitive Peak pulse current
di/dt
dv/dt
Critical rate of rise of on-state current
Critical Rate of Rise of Off-State Voltage
Ver: June 2001
PAGE 4
TSP058B - TSP320B
PRELIMINARY
+I
I
PPS
I
TSM
I
T
I
BO
I
H
THYRISTOR
I
BR
_
V
I
DRM
V
T
V
DRM
V
BO
+V
TSP058B - TSP320B
TSP220B
TSP275B
TSP320B
44
44
43
52
51
50
37
37
37
39
39
38
32
32
32
35
34
34
27
27
27
30
29
29
13
13
13
18
18
17
MECHANICAL DATA
• Case: JEDEC DO-15 molded plastic
• Te r m i n a l s : P l a t e d A x i a l l e a d s , s o l d e r a b l e p e r
MIL-STD-750, Method 2026
• Polarity: Bi-directional
1.0(25.4) MIN.
DO-15
Unit: inch ( mm )
• Weight: 0.015 ounce, 0.4 gram
.034(.86)
.028(.71)
.300(7.6)
.230(5.8)
.140(3.6)
.104(2.6)
1.0(25.4) MIN.
Ver: June 2001
PAGE 5
TSP058B - TSP320B
PRELIMINARY
CAPACITANCE CHARACTERISTICS
F = 1 MHz, V
ac
= 15 mV
rms
Off-State Capacitance
C
O
Part Number
0 V dc
Typ.
TSP058B
TSP065B
TSP075B
TSP090B
TSP120B
TSP140B
TSP160B
TSP190B
70
67
67
57
50
49
46
45
Max.
100
90
78
61
58
54
53
53
Typ.
59
58
56
48
42
40
38
38
1 V dc
Max.
74
69
64
50
45
43
40
39
Typ.
53
52
49
42
38
36
34
33
pF
2 V dc
Max.
68
63
58
46
50
43
36
35
Typ.
45
43
42
35
31
30
28
28
5 V dc
Max.
59
56
49
38
33
32
30
30
Typ.
24
22
23
19
17
16
15
14
50 V dc
Max.
29
28
THYRISTOR
27
21
20
19
18
18
Microchip MCU
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