BLL6H1214-500;
BLL6H1214LS-500
LDMOS L-band radar power transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1.
Test information
Typical RF performance at T
case
= 25
C; t
p
= 300
s;
= 10 %; I
Dq
= 150 mA; in a class-AB
production test circuit.
Test signal
pulsed RF
f
(GHz)
1.2 to 1.4
V
DS
(V)
50
P
L
(W)
500
G
p
(dB)
17
D
(%)
50
t
r
(ns)
20
t
f
(ns)
6
1.2 Features and benefits
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
Graphic symbol
BLL6H1214-500 (SOT539A)
1
2
5
3
3
4
4
5
1
2
sym117
BLL6H1214LS-500 (SOT539B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
[1]
1
2
5
1
3
4
3
5
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLL6H1214-500
BLL6H1214LS-500
-
-
flanged balanced ceramic package; 2 mounting holes;
4 leads
earless flanged balanced ceramic package; 4 leads
Version
SOT539A
SOT539B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
-
Max
100
+13
+150
200
Unit
V
V
C
C
BLL6H1214-500_1214LS-500#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
2 of 21
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
5. Thermal characteristics
Table 5.
Symbol
Z
th(j-c)
Thermal characteristics
Parameter
transient thermal impedance from
junction to case
Conditions
T
case
= 85
C;
P
L
= 500 W
t
p
= 100
s;
= 10 %
t
p
= 200
s;
= 10 %
t
p
= 300
s;
= 10 %
t
p
= 100
s;
= 20 %
BLL6H1214LS-500
Z
th(j-c)
transient thermal impedance from
junction to case
T
case
= 85
C;
P
L
= 500 W
t
p
= 100
s;
= 10 %
t
p
= 200
s;
= 10 %
t
p
= 300
s;
= 10 %
t
p
= 100
s;
= 20 %
0.046 K/W
0.059 K/W
0.069 K/W
0.064 K/W
0.07
0.08
0.1
0.1
K/W
K/W
K/W
K/W
Typ
Unit
BLL6H1214-500
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 270 mA
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 270 mA
Min
100
1.3
-
32
-
1.7
-
Typ
-
1.8
-
42
-
3
100
Max Unit
-
2.2
1.4
-
140
-
164
V
V
A
A
nA
S
m
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 2.7 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 9.5 A
Table 7.
RF characteristics
Test signal: pulsed RF; t
p
= 300
s;
= 10 %; RF performance at V
DS
= 50 V; I
Dq
= 150 mA;
T
case
= 25
C; unless otherwise specified, in a class-AB production test circuit.
Symbol
P
L
V
DS
G
p
RL
in
P
L(1dB)
D
Parameter
output power
drain-source voltage
power gain
input return loss
output power at 1 dB gain compression
drain efficiency
P
L
= 500 W
P
L
= 500 W
P
L
= 500 W
P
L
= 500 W
Conditions
Min Typ Max Unit
500
-
15
-
-
45
-
-
17
10
600
50
-
50
-
-
-
-
W
V
dB
dB
W
%
BLL6H1214-500_1214LS-500#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
3 of 21
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
Table 7.
RF characteristics
…continued
Test signal: pulsed RF; t
p
= 300
s;
= 10 %; RF performance at V
DS
= 50 V; I
Dq
= 150 mA;
T
case
= 25
C; unless otherwise specified, in a class-AB production test circuit.
Symbol
P
droop(pulse)
t
r
t
f
Parameter
pulse droop power
rise time
fall time
Conditions
P
L
= 500 W
P
L
= 500 W
P
L
= 500 W
Min Typ Max Unit
-
-
-
0
20
6
0.3
50
50
dB
ns
ns
7. Test information
7.1 Ruggedness in class-AB operation
The BLL6H1214-500 and BLL6H1214LS-500 are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
DS
= 50 V; I
Dq
= 150 mA; P
L
= 500 W; t
p
= 300
s;
= 10 %.
7.2 Impedance information
Table 8.
Typical impedance
Typical values per section unless otherwise specified.
f
(GHz)
1.2
1.3
1.4
Z
S
()
1.268
j2.623
2.193
j2.457
2.359
j2.052
Z
L
()
2.987
j1.664
2.162
j1.326
1.604
j1.887
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.3 Test circuit
Table 9.
List of components
For test circuit see
Figure 2.
Component
C1
C2
C3, C4
C5, C11, C12
C6
C7, C8, C10
BLL6H1214-500_1214LS-500#4
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
All information provided in this document is subject to legal disclaimers.
Value
22
F,
35 V
51 pF
100 pF
1 nf
47 pF
51 pF
[1]
[1]
[2]
[1]
[3]
Remarks
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
4 of 21
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
Table 9.
List of components
…continued
For test circuit see
Figure 2.
Component
C9
C13
R1
R2
[1]
[2]
[3]
Description
multilayer ceramic chip capacitor
electrolytic capacitor
SMD resistor
metal film resistor
Value
100 pF
10
F,
63 V
56
51
[3]
Remarks
0603
American Technical Ceramics type 100A or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
American Technical Ceramics type 800B or capacitor of same quality.
C10
C12
C1
C2
R1
C3
C4
C5
C8
C9
C11
C13
R2
C6
C7
001aaj490
Printed-Circuit Board (PCB): Duroid 6006;
r
= 6.15 F/m; thickness = 0.64 mm; thickness copper plating = 35
m.
See
Table 9
for a list of components.
Fig 2.
Component layout for class-AB production test circuit
BLL6H1214-500_1214LS-500#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
5 of 21
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