BLF871; BLF871S
UHF power LDMOS transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The
excellent ruggedness and broadband performance of this device makes it ideal for digital
transmitter applications.
Table 1.
Typical performance
RF performance at V
DS
= 40 V in a common-source 860 MHz test circuit.
Mode of operation
CW, class AB
2-tone, class AB
DVB-T (8k OFDM)
[1]
[2]
f
(MHz)
860
f
1
= 860; f
2
= 860.1
858
P
L
P
L(PEP)
P
L(AV)
(W)
-
-
24
G
p
21
21
22
D
60
47
33
IMD3
-
35
34
[1]
PAR
(dB)
-
-
8.3
[2]
(W) (W)
100 -
-
-
100
-
(dB) (%) (dBc)
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
2-tone performance at 860 MHz, a drain-source voltage V
DS
of 40 V and a quiescent
drain current I
Dq
= 0.5 A:
Peak envelope power load power = 100 W
Power gain = 21 dB
Drain efficiency = 47 %
Third order intermodulation distortion =
35
dBc
DVB performance at 858 MHz, a drain-source voltage V
DS
of 40 V and a quiescent
drain current I
Dq
= 0.5 A:
Average output power = 24 W
Power gain = 22 dB
Drain efficiency = 33 %
Third order intermodulation distortion =
34
dBc (4.3 MHz from center frequency)
BLF871; BLF871S
UHF power LDMOS transistor
Integrated ESD protection
Excellent ruggedness
High power gain
High efficiency
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLF871 (SOT467C)
1
3
2
2
3
sym112
1
BLF871S (SOT467B)
1
2
3
drain
gate
source
[1]
1
1
2
3
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Name Description
BLF871
BLF871S
-
-
earless LDMOST ceramic package; 2 leads
Version
SOT467B
Type number Package
flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C
BLF871_BLF871S#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
2 of 20
BLF871; BLF871S
UHF power LDMOS transistor
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
-
Max
89
+13
+150
200
Unit
V
V
C
C
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
[1]
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L(AV)
= 50 W
[1]
Typ
0.95
Unit
K/W
R
th(j-c)
is measured under RF conditions.
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
R
DS(on)
C
iss
C
oss
C
rss
[1]
Conditions
[1]
[1]
Min Typ Max
89
1.4
-
-
-
-
2.4
1.4
-
140
Unit
V
A
A
nA
m
pF
pF
pF
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 1.12 mA
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
V
DS
= 10 V; I
D
= 112 mA
V
GS
= 0 V; V
DS
= 40 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 10 V; V
DS
= 0 V
105.5 V
16.7 20
-
[1]
-
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 3.7 A
input capacitance
output capacitance
reverse transfer capacitance
V
GS
= 0 V; V
DS
= 40 V;
f = 1 MHz
V
GS
= 0 V; V
DS
= 40 V;
f = 1 MHz
V
GS
= 0 V; V
DS
= 40 V;
f = 1 MHz
-
-
-
-
210 -
95
30
1
-
-
-
I
D
is the drain current.
BLF871_BLF871S#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
3 of 20
BLF871; BLF871S
UHF power LDMOS transistor
160
C
oss
(pF)
120
001aaj276
80
40
0
0
20
40
V
DS
(V)
60
V
GS
= 0 V; f = 1 MHz.
Fig 1.
Output capacitance as a function of drain-source voltage; typical values
7. Application information
Table 7.
RF performance in a common-source narrowband 860 MHz test circuit
T
h
= 25
C unless otherwise specified.
Mode of operation
2-tone, class AB
DVB-T (8k OFDM)
[1]
[2]
f
(MHz)
f
1
= 860;
f
2
= 860.1
858
V
DS
I
Dq
(V)
40
40
P
L(PEP)
P
L(AV)
(W)
-
24
G
p
D
IMD3
(dBc)
PAR
(dB)
-
> 7.8
[2]
(A) (W)
0.5 100
0.5 -
(dB) (%)
> 19 > 44 <
30
> 19 > 30 <
31
[1]
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
BLF871_BLF871S#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
4 of 20
BLF871; BLF871S
UHF power LDMOS transistor
7.1 Narrowband RF figures
7.1.1 CW
001aaj277
24
G
p
(dB)
22
G
p
80
η
D
(%)
60
η
D
20
40
18
20
16
0
60
120
P
L
(W)
0
180
V
DS
= 40 V; I
Dq
= 0.5 A; measured in a common source narrowband 860 MHz test circuit.
Fig 2.
CW power gain and drain efficiency as a function of load power; typical values
7.1.2 2-Tone
001aaj278
001aaj279
25
G
p
(dB)
23
G
p
η
D
80
η
D
(%)
60
0
IMD3
(dBc)
−20
21
40
−40
19
20
(1)
(2)
17
0
40
80
P
L(AV)
(W)
0
120
−60
0
40
80
P
L(AV)
(W)
120
V
DS
= 40 V; I
Dq
= 0.5 A; measured in a common source
narrowband 860 MHz test circuit.
V
DS
= 40 V; I
Dq
= 0.5 A; measured in a common source
narrowband 860 MHz test circuit.
(1) Low frequency component
(2) High frequency component
Fig 3.
2-Tone power gain and drain efficiency as
functions of average load power; typical
values
Fig 4.
2-Tone third order intermodulation distortion
as a function of average load power; typical
values
BLF871_BLF871S#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
5 of 20
FPGA/CPLD
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