BLF7G22L-250PB;
BLF7G22LS-250PB
Power LDMOS transistor
Rev. 01 — 16 December 2009
Objective data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor for base station applications at frequencies from
2110 MHz to 2170 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
°
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
2110 to 2170
I
Dq
(mA)
2160
V
DS
(V)
28
P
L(AV)
(W)
70
G
p
(dB)
> 17
η
D
(%)
30
ACPR
(dBc)
−28
[1]
Test signal: 3GPP; test model 1; 64 PDPCH; PAR = 7.5 dB at 0.01 % probability on CCDF.
1.2 Features
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for broadband operation (2110 MHz to 2170 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2110 MHz to 2170 MHz frequency range
NXP Semiconductors
BLF7G22L(S)-250PB
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6, 7
8, 9
1
2
3
4
5
6, 7
8, 9
[1]
Pinning
Description
drain1
drain2
gate1
gate2
source
sense drain
sense gate
drain1
drain2
gate1
gate2
source
sense drain
sense gate
2
sym127
Simplified outline
Graphic symbol
BLF7G22L-250PB (SOT1110A)
6
1
2
7
1
6, 7
8
[1]
3
4
9
5
3
4
5
8, 9
2
sym127
BLF7G22LS-250PB (SOT1110B)
6
1
2
7
5
3
8
[1]
1
6, 7
8, 9
5
3
4
9
4
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF7G22L-250PB
-
flanged LDMOST ceramic package; 2 mounting holes;
8 leads
earless flanged LDMOST ceramic package; 8 leads
Version
SOT1110A
SOT1110B
Type number
BLF7G22LS-250PB -
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
−0.5
-
−65
-
Max
65
+13
<tbd>
+150
200
Unit
V
V
A
°C
°C
BLF7G22L-250PB_22LS-250PB_1
© NXP B.V. 2009. All rights reserved.
Objective data sheet
Rev. 01 — 16 December 2009
2 of 8
NXP Semiconductors
BLF7G22L(S)-250PB
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
°C;
P
L
= 50 W;
T
j
≤
150
°C
Typ
Unit
0.45 K/W
6. Characteristics
Table 6.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 150 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 7.5 A
Min
Typ
Max
-
Unit
V
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 1.5 mA
<tbd> -
-
-
-
-
-
-
<tbd> <tbd> <tbd> V
<tbd>
μA
A
<tbd> -
-
<tbd> nA
S
Ω
<tbd> -
<tbd> -
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 5.25 A
7. Test information
Table 7.
Functional test information
Mode of operation: 2-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 1-64 PDPCH; f
1
= 2110 MHz; f
2
= 2140 MHz; f
3
= 2170 MHz; RF performance at
V
DS
= 28 V; I
Dq
= 2160 mA; T
case
= 25
°
C; unless otherwise specified; in a class-AB production test
circuit.
Symbol
P
L(AV)
G
p
RL
in
η
D
ACPR
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
P
L(AV)
= 70 W
P
L(AV)
= 70 W
P
L(AV)
= 70 W
P
L(AV)
= 70 W
Conditions
Min
-
-
-
-
-
Typ
70
-
<tbd>
30
−28
Max
-
17
-
-
-
Unit
W
dB
dB
%
dBc
7.1 Ruggedness in class-AB operation
The BLF7G22L-250PB and BLF7G22LS-250PB are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
DS
= 32 V; I
Dq
= 2160 mA; P
L
= 70 W (CW); f = 2140 MHz.
BLF7G22L-250PB_22LS-250PB_1
© NXP B.V. 2009. All rights reserved.
Objective data sheet
Rev. 01 — 16 December 2009
3 of 8
NXP Semiconductors
BLF7G22L(S)-250PB
Power LDMOS transistor
8. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 8 leads
SOT1110A
D
A
F
L
D
1
U
1
q
H
1
6
α
1
2
7
B
C
w
2
D
c
H
U
2
Z
5
p
E
1
E
A
8
b
e
3
b
1
4
9
w
3
w
1
A
B
Q
W
3
0.25
Z
5.97
5.72
α
64°
62°
0
5
scale
10 mm
0.01
0.235 64°
0.225 62°
Dimensions
Unit
(1)
mm
A
b
1.14
0.89
b
1
c
D
D
1
e
13.72
11.56 0.10 30.94 30.96
9.30 9.27 1.50 16.10 25.27 2.41
3.05
2.01
1.4
1.615 0.395
sot1110a_po
E
E
1
F
H
H
1
L
p
3.30
Q
2.26
q
35.56
U
1
U
2
w
1
w
2
max 5.36
nom
min 3.99
11.81 0.18 31.55 31.52
9.50 9.53 1.75 17.12 25.53 2.67
41.28 10.29
0.25 0.51
41.02 10.03
1.625 0.405
0.01 0.02
0.374 0.375 0.069 0.674 1.005 0.105 0.13 0.089
max 0.211 0.045 0.465 0.007 1.242 1.241
0.540
inches nom
0.366 0.365 0.059 0.634 0.995 0.095 0.12 0.079
min 0.157 0.035 0.455 0.004 1.218 1.219
Note
1. Millimeter dimensions are derived from the original inch dimensions.
Outline
version
SOT1110A
References
IEC
JEDEC
JEITA
European
projection
Issue date
09-11-03
09-11-20
Fig 1.
Package outline SOT1110A
© NXP B.V. 2009. All rights reserved.
BLF7G22L-250PB_22LS-250PB_1
Objective data sheet
Rev. 01 — 16 December 2009
4 of 8
NXP Semiconductors
BLF7G22L(S)-250PB
Power LDMOS transistor
Earless flanged LDMOST ceramic package; 8 leads
SOT1110B
D
A
F
5
L
D
1
D
U
1
H
1
6
α
1
2
7
w
2
D
c
H
U
2
Z
Z
1
E
1
E
8
b
3
b
1
e
4
9
w
3
Q
Z
1
α
11.20 64°
10.95 62°
0
5
scale
Dimensions
Unit
(1)
mm
A
b
1.14
0.89
b
1
c
D
D
1
e
13.72
11.56 0.10
30.94 30.96
0.54
0.366 0.365 0.059 0.634 0.995 0.095 0.079 1.265 0.395
9.3
9.27
1.50
16.10 25.27 2.41
2.01 32.13 10.03
0.02
0.01
0.225
sot1110b_po
10 mm
0.441 64°
0.431 62°
E
9.5
E
1
9.53
F
1.75
H
H
1
L
Q
U
1
U
2
W
2
0.51
W
3
0.25
Z
5.97
5.72
0.235
max 5.36
nom
min 3.99
11.81 0.18
31.55 31.52
17.12 25.53 2.67
2.26 32.39 10.29
max 0.211 0.045 0.465 0.007 1.242 1.241
inches nom
min 0.157 0.035 0.455 0.004 1.218 1.219
0.374 0.375 0.069 0.674 1.005 0.105 0.089 1.275 0.405
Note
1. Millimeter dimensions are derived from the original inch dimensions.
Outline
version
SOT1110B
References
IEC
JEDEC
JEITA
European
projection
Issue date
09-11-03
09-11-20
Fig 2.
Package outline SOT1110B
© NXP B.V. 2009. All rights reserved.
BLF7G22L-250PB_22LS-250PB_1
Objective data sheet
Rev. 01 — 16 December 2009
5 of 8
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