DDR DRAM Module, 32MX64, CMOS, ROHS COMPLIANT, SODIMM-200
参数名称 | 属性值 |
是否Rohs认证 | 符合 |
厂商名称 | White Electronic Designs Corporation |
包装说明 | DIMM, |
Reach Compliance Code | unknown |
访问模式 | SINGLE BANK PAGE BURST |
其他特性 | AUTO/SELF REFRESH |
JESD-30 代码 | R-XZMA-N200 |
JESD-609代码 | e4 |
内存密度 | 2147483648 bit |
内存集成电路类型 | DDR DRAM MODULE |
内存宽度 | 64 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 200 |
字数 | 33554432 words |
字数代码 | 32000000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 65 °C |
最低工作温度 | |
组织 | 32MX64 |
封装主体材料 | UNSPECIFIED |
封装代码 | DIMM |
封装形状 | RECTANGULAR |
封装形式 | MICROELECTRONIC ASSEMBLY |
峰值回流温度(摄氏度) | NOT SPECIFIED |
认证状态 | Not Qualified |
自我刷新 | YES |
最大供电电压 (Vsup) | 1.9 V |
最小供电电压 (Vsup) | 1.7 V |
标称供电电压 (Vsup) | 1.8 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子面层 | Gold (Au) |
端子形式 | NO LEAD |
端子位置 | ZIG-ZAG |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
W3HG32M64EEU806D4SG | W3HG32M64EEU403D4MG | W3HG32M64EEU534D4MG | W3HG32M64EEU534D4SG | W3HG32M64EEU806D4MG | W3HG32M64EEU403D4SG | W3HG32M64EEU665D4SG | |
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描述 | DDR DRAM Module, 32MX64, CMOS, ROHS COMPLIANT, SODIMM-200 | DDR DRAM Module, 32MX64, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200 | DDR DRAM Module, 32MX64, 0.5ns, CMOS, ROHS COMPLIANT, SODIMM-200 | DDR DRAM Module, 32MX64, 0.5ns, CMOS, ROHS COMPLIANT, SODIMM-200 | DDR DRAM Module, 32MX64, CMOS, ROHS COMPLIANT, SODIMM-200 | DDR DRAM Module, 32MX64, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200 | DDR DRAM Module, 32MX64, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200 |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
厂商名称 | White Electronic Designs Corporation | White Electronic Designs Corporation | White Electronic Designs Corporation | White Electronic Designs Corporation | White Electronic Designs Corporation | White Electronic Designs Corporation | White Electronic Designs Corporation |
包装说明 | DIMM, | DIMM, | DIMM, | DIMM, | DIMM, | DIMM, | DIMM, |
Reach Compliance Code | unknown | unknown | unknown | unknow | unknow | unknow | unknown |
访问模式 | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST |
其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
JESD-30 代码 | R-XZMA-N200 | R-XZMA-N200 | R-XZMA-N200 | R-XZMA-N200 | R-XZMA-N200 | R-XZMA-N200 | R-XZMA-N200 |
JESD-609代码 | e4 | e4 | e4 | e4 | e4 | e4 | e4 |
内存密度 | 2147483648 bit | 2147483648 bit | 2147483648 bit | 2147483648 bi | 2147483648 bi | 2147483648 bi | 2147483648 bit |
内存集成电路类型 | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE |
内存宽度 | 64 | 64 | 64 | 64 | 64 | 64 | 64 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 200 | 200 | 200 | 200 | 200 | 200 | 200 |
字数 | 33554432 words | 33554432 words | 33554432 words | 33554432 words | 33554432 words | 33554432 words | 33554432 words |
字数代码 | 32000000 | 32000000 | 32000000 | 32000000 | 32000000 | 32000000 | 32000000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 65 °C | 65 °C | 65 °C | 65 °C | 65 °C | 65 °C | 65 °C |
组织 | 32MX64 | 32MX64 | 32MX64 | 32MX64 | 32MX64 | 32MX64 | 32MX64 |
封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
封装代码 | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
自我刷新 | YES | YES | YES | YES | YES | YES | YES |
最大供电电压 (Vsup) | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V |
最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
表面贴装 | NO | NO | NO | NO | NO | NO | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子面层 | Gold (Au) | Gold (Au) | Gold (Au) | Gold (Au) | Gold (Au) | Gold (Au) | Gold (Au) |
端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
端子位置 | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
最长访问时间 | - | 0.6 ns | 0.5 ns | 0.5 ns | - | 0.6 ns | 0.45 ns |
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