JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
BC846A, B
BC847A, B, C
BC848A, B, C
TRANSISTOR (NPN)
SOT-23
1. BASE
2. EMITTER
FEATURES
Ideally suited for automatic insertion
For Switching and AF Amplifier Applications
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
Parameter
3. COLLECTOR
Value
Unit
V
Collector-Base Voltage
BC846
BC847
BC848
80
50
30
V
CEO
Collector-Emitter Voltage
V
BC846
BC847
BC848
V
EBO
I
C
P
C
T
J
T
stg
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
65
45
30
6
0.1
200
150
-65-150
V
A
mW
℃
℃
DEVICE MARKING
BC846A=1A; BC846B=1B;
BC847A=1E; BC847B=1F; BC847C=1G;
BC848A=1J; BC848B=1K: BC848C=1L
A,May,2011
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
BC846
BC847
BC848
Collector-emitter breakdown voltage
BC846
BC847
BC848
Emitter-base breakdown voltage
Collector cut-off current
BC846
BC847
BC848
Collector cut-off current
BC846
BC847
BC848
Emitter cut-off current
DC current gain
BC846A,847A,848A
BC846B,847B,848B
BC847C,BC848C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE(sat)
I
C
=100mA, I
B
= 5mA
I
C
=100mA, I
B
= 5mA
V
CE
= 5 V, I
C
= 10mA
h
FE
V
CE
= 5V, I
C
= 2mA
I
EBO
I
CEO
I
CBO
V
EBO
I
E
= 10µA, I
C
=0
V
CB
=70 V , I
E
=0
V
CB
=50 V , I
E
=0
V
CB
=30 V , I
E
=0
V
CE
=60 V , I
B
=0
V
CE
=45 V , I
B
=0
V
CE
=30 V , I
B
=0
V
EB
=5 V , I
C
=0
110
200
420
0.1
220
450
800
0.5
1.1
100
V
V
MHz
0.1
0.1
V
CEO
I
C
= 10mA, I
B
=0
V
CBO
I
C
= 10µA, I
E
=0
Symbol
Test conditions
Min
80
50
30
65
45
30
6
V
V
V
Typ
Max Unit
μ
A
μ
A
μ
A
f
T
C
ob
f=
100MHz
V
CB
=10V,f=
1
MHz
4.5
pF
A,May,2011
Typical Characteristics
Static Characteristic
18
16
BC846
h
FE
——
I
C
COMMON EMITTER
V
CE
=5V
60uA
54uA
48uA
42uA
1000
(mA)
COMMON
EMITTER
T
a
=25
℃
h
FE
T
a
=100
℃
I
C
COLLECTOR CURRENT
36uA
30uA
8
DC CURRENT GAIN
12
300
T
a
=25
℃
24uA
4
18uA
12uA
I
B
=6uA
0
1
2
3
4
5
6
0
100
0.1
1
10
100
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1000
V
CEsat
——
I
C
1000
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
300
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
800
100
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
30
600
10
0.1
β=20
1
10
100
400
0.1
β=20
1
10
100
COLLECTOR CURRENT
I
c
(mA)
COLLECTOR CURRENT
I
C
(mA)
100
I
C
COMMON EMITTER
V
CE
=5V
——
V
BE
100
C
ob
/C
ib
——
V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
(mA)
(pF)
T
a
=100
℃
10
I
C
10
Cib
COLLCETOR CURRENT
CAPACITANCE
C
Cob
1
1
T
a
=25
℃
0.1
0.2
0.4
0.6
0.8
1.0
0.1
0.1
1
10
20
BASE-EMITTER VOLTAGE
V
BE
(V)
REVERSE BIAS VOLTAGE
V
(V)
1000
f
T
V
CE
=5V
T
a
=25
℃
——
I
C
250
P
C
——
T
a
(MHz)
COLLECTOR POWER DISSIPATION
P
C
(mW)
1
10
50
200
TRANSITION FREQUENCY
f
T
150
100
100
50
10
0
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
A,May,2011
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
