LITE-ON
SEMICONDUCTOR
L15ESDL5V0D6-4
STAND-OFF VOLTAGE -
5.0
Volts
POWER DISSIPATION -
150
WATTS
ESD PROTECTION DEVICE
GENERAL DESCRIPTION
The L15ESDL5V0D6-4 is ultra low capacitance TVS arrays designed to
protect high speed data interfaces. This series has been specifically
designed to protect sensitive components which are connected to high-
speed data and transmission lines from overvoltage caused by ESD
(electrostatic discharge), CDE (Cable Discharge Events), and EFT
(electrical fast transients).
SOT-363
B
C
SOT-363
DIM.
A
B
C
D
E
MIN.
0.80
1.8
1.15
MAX.
1.10
2.20
1.40
F
FEATURES
Protects up to four I/O lines & power line
Low capacitance: <3pF for high-speed interfaces
Low clamping voltage
IEC 61000-4-2, level 4 ( ESD ), >
±15KV
( air ) ; >
±8KV
( contact ).
A
1.30 (Typ.)
0.65 (Typ.)
2.00 2.10 2.45
F
APPLICATION
Digital Visual Interface (DVI)
Gigabit Ethernet
Monitors and Flat Panel Displays
USB 2.0
USB OTG
IEEE 1394 Firewire Ports
E
D
G
0.15
0.35
G
All Dimensions in millimeter
PIN A SSIGNMENT
1, 3, 4, 6
5
2
I/O Lines
V
CC
Ground
MECHANICAL DATA
Case Material: "Green" molding compound UL flammability
classification 94V-0 (No Br.Sb, Cl)
Terminals: Lead Free Plating (Matte Tin Finish)
Component in accordance to RoHs 2002/95/E
4 lines Protection
MAXIMUM RATINGS (Tj= 25℃ unless otherwise noticed)
Rating
Peak Pulse Power (tp = 8/20us)
Peak Pulse Current (tp = 8/20us)
Operating Junction Temperature Range
Storage Temperature Range
Soldering Temperature, t max = 10s
Symbol
P
pk
Ipp
T
J
Tstg
T
L
Value
150 (Max)
8
-55 to + 125
-55 to + 150
260
Unit
W
A
℃
℃
℃
ELECTRICAL CHARACTERISTICS
(Tj= 25
℃
unless otherwise noticed)
Parameter
Reverse standoff voltage
Breakdown voltage
Reverse leakage current
Clamping Voltage
Clamping Voltage
Junction capacitance
Junction capacitance
Symbol
V
RWM
V
BR
I
RM
V
C
V
C
C
J
C
J
Conditions
Any pin to ground
I
R
= 1 mA
V
DRM
= 5V
I
PP
= 1A, tp = 8/20µs, Any pin to ground
I
PP
= 8A, tp = 8/20µs, Any pin to ground
V
R
= 0V, f = 1MHz, Any pin to ground
V
R
= 0V, f = 1MHz, Between I/O pins
MIn
---
6.0
---
---
---
---
---
Typ
---
---
---
---
---
---
---
Max
5.0
---
1
15
19
3
1.5
Unit
V
V
uA
V
V
pF
pF
REV. 1, Oct-2010, KSIR36
RATING AND CHARACTERISTIC CURVES
L15ESDL5V0D6-4
Figure 1. 8/20 us pulse waveform
according to IEC 61000-4-5
Figure 2. ESD pulse waveform
according to IEC 61000-4-2
1000
1.2
Ppp/Ppp (25
℃
)
TJ =25℃, tp (us) = 8/20 us
exponentially decay waveform
100
0.8
0.4
10
0
0
25
50
75
100
125
150
1
1
10
100
1000
Junction Temperature (
℃
)
Figure 4. Peak pulse power versus TJ
Figure 3. Power Dissipation versus Pulse Time
3
Any I/O pin to pin 2
1000.0
Capacitance (pF)
2
IR / IR (25
℃
)
10.0
1
TJ =25℃, f=1MHz, Vosc=100mV
0
0
1
2
3
4
5
Reverse Voltage (V)
0.1
0
25
50
75
100
125
150
Junction Temperature (℃)
Figure 5. Typical Junction Capacitance
Figure 6. Reverse Leakage Current versus TJ
Legal Disclaimer Notice
L15ESDL5V0D6-4
Important Notice and Disclaimer
LSC reserves the right to make changes to this document and its products and
specifications at any time without notice. Customers should obtain and confirm the
latest product information and specifications before final design, purchase or use.
LSC makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does LSC assume any liability for
application assistance or customer product design. LSC does not warrant or
accept any liability with products which are purchased or used for any unintended
or unauthorized application.
No license is granted by implication or otherwise under any intellectual property
rights of LSC.
LSC products are not authorized for use as critical components in life support
devices or systems without express written approval of LSC.
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
