SSF2122E
20V Dual N-Channel MOSFET
Main Product Characteristics
V
DSS
20V
R
DS
(on) 15.2mohm(typ.)
I
D
7A
①
DFN 3x3-8L
Marking and Pin
Assignment
Schematic Diagram
Features and Benefits
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
I
D
@ TC = 25°C
I
D
@ TC = 100°C
I
DM
P
D
@TC = 25°C
V
DS
V
GS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
②
Power Dissipation
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
7
①
5
①
42
1.4
20
± 12
-55 to + 150
W
V
V
°C
A
Units
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Page 1 of 8
Rev.1.0
SSF2122E
20V Dual N-Channel MOSFET
Electrical Characteristics
@T
A
=25℃
Symbol
V
(BR)DSS
Parameter
Drain-to-Source breakdown voltage
20
—
R
DS(on)
Static Drain-to-Source on-resistance
—
—
—
V
GS(th)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
unless otherwise specified
Typ.
—
15.2
15.9
17.6
20.8
—
0.30
—
—
—
Max.
—
23
24
30
35
1
—
1
10
-10
—
—
—
—
—
—
—
—
—
—
pF
V
GS
= 0V,
V
DS
=10V,
ƒ = 1MHz
nS
V
GS
=4V, V
DS
=10V,
R
L
=2.86Ω,I
D
= 3.5A
nC
V
μA
μA
mΩ
Units
V
Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
=4.5V,I
D
= 4A
V
GS
=4V,I
D
=4A
V
GS
=3.1V,I
D
=4A
V
GS
=2.5V,I
D
=2A
V
DS
= V
GS
, I
D
= 250μA
T
J
= 125℃
V
DS
= 20V,V
GS
= 0V
V
GS
=8V
V
GS
= -8V
I
D
= 7A,
V
DS
=10V,
V
GS
= 10V
Min.
24.1
1.4
4.2
5.3
18.2
25
3
681
124
117
Source-Drain Ratings and Characteristics
Symbol
I
S
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
—
Typ.
—
Max.
7
①
Units
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
S
=1.5A, V
GS
=0V
T
J
= 25°C, I
F
=7A, di/dt =
100A/μs
I
SM
V
SD
t
rr
Q
rr
—
—
—
—
—
0.7
34.3
10.2
42
1.2
—
—
A
V
nS
nC
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Page 2 of 8
Rev.1.0
SSF2122E
20V Dual N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated
continuous current based on maximum allowable junction temperature.
②Repetitive
rating; pulse width limited by max junction temperature.
③The
value of
R
θJA
is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
④These
curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of T
J(MAX)
=150°C.
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Page 3 of 8
Rev.1.0
SSF2122E
20V Dual N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 1: Typical Output Characteristics
Figure 2. Typical Transfer Characteristics
Figure 3. Gate to source cut-off oltage
Figure 4: Drain-to-Source Breakdown Voltage vs.
Temperature
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Page 4 of 8
Rev.1.0
SSF2122E
20V Dual N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Normalized On-Resistance Vs. Case
Temperature
Figure 6. Normalized On-Resistance Vs. Gate to
Source voltage
Figure 7. Typical Capacitance Vs. Drain-to-Source
Voltage
Figure 8. Gate-Charge Characteristics
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Page 5 of 8
Rev.1.0
51单片机
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