JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2N5551K
TRANSISTOR (NPN)
1. EMITTER
FEATURES
General Purpose Switching Application
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
180
160
6
0.6
625
200
150
-55~+150
2.
COLLECTOR
3.
BASE
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
V
CE(sat)
（
1
）
V
CE(sat)
（
2
）
V
BE (sat)
（
1
）
V
BE (sat)
（
2
）
C
ob
C
ib
f
T
*
Test
conditions
Min
180
160
6
Typ
Max
Unit
V
V
V
I
C
=100µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=10µA,I
C
=0
V
CB
=120V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
V
CB
=10V,I
E
=0, f=1MHz
V
BE
=0.5V,I
C
=0, f=1MHz
V
CE
=10V,I
C
=10mA, f=100MHz
V
(BR)EBO
50
50
80
80
50
0.15
0.2
1
1
6
20
100
300
300
nA
nA
V
V
V
V
pF
pF
MHz
Base-emitter saturation voltage
Collector output capacitance
Emitter input capacitance
Transition frequency
*Pulse test: pulse width
≤300μs,
duty cycle≤ 2.0%.
CLASSIFICATION OF h
FE(2)
RANK
RANGE
80-100
A
100-150
B
150-200
C
200-300
B,Apr,2012
Typical Characterisitics
Static Characteristic
50
1000
2N5551K
h
FE
——
I
C
T
a
=100
℃
300uA
(mA)
40
270uA
240uA
COMMON
EMITTER
T
a
=25
℃
I
C
COLLECTOR CURRENT
180uA
20
DC CURRENT GAIN
30
210uA
h
FE
100
T
a
=25
℃
150uA
120uA
90uA
10
60uA
I
B
=30uA
COMMON EMITTER
V
CE
=5V
10
0
2
4
6
8
1
10
100
200
0
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
CEsat
1000
——
I
C
2
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
1
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
T
a
=25
℃
100
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
10
1
10
100
β=10
200
β=10
0.1
1
10
100
200
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
200
100
—— V
BE
100
C
ob
/ C
ib
—— V
CB
/ V
EB
f=1MHz
I
E
=0/ I
C
=0
(mA)
C
ib
(pF)
T
a
=25
℃
I
C
COLLECTOR CURRENT
10
T =1
00
℃
a
T =2
5
℃
a
C
CAPACITANCE
10
C
ob
1
COMMON EMITTER
V
CE
=5V
0.1
0.0
0.3
0.6
0.9
1.2
1
0.1
1
10
20
BASE-EMMITER VOLTAGE V
BE
(V)
REVERSE VOLTAGE
V
(V)
f
T
200
100
—— I
C
700
P
C
——
T
a
(MHz)
600
COLLECTOR POWER DISSIPATION
P
C
(mW)
60
TRANSITION FREQUENCY
f
T
500
400
10
300
200
COMMON EMITTER
T
a
=25
℃
V
CE
=10V
1
1
10
100
0
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
B,Apr,2012
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
