2N7002-AU
60V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• R
DS(ON)
, V
GS
@10V,I
DS
@500mA=3Ω
• R
DS(ON)
, V
GS
@4.5V,I
DS
@200mA=4Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• Acquire quality system certificate : TS16949
• AEC-Q101 qualified
• Lead free in compliance with EU RoHS 2011/65/EU directive
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.013(0.35)
0.044(1.10)
0.035(0.90)
0.079(2.00)
0.070(1.80)
0.008(0.20)
0.003(0.08)
0.056(1.40)
0.047(1.20)
0.120(3.04)
0.110(2.80)
0.006(0.15)MIN.
MECHANICAL DATA
• Case: SOT-23 Package
• Terminals: Solderable per MIL-STD-750,Method 2026
• Marking: S72
• Approx. Weight: 0.0003 ounce, 0.0084 gram
Maximum RATINGS and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA M E TE R
D r a i n- S o ur c e Vo l t a g e
G a t e - S o ur c e Vo l t a g e
C o nt i nuo us D r a i n C ur r e nt
P ul s e d D r a i n C ur r e nt
1)
S ym b o l
V
DS
V
GS
I
D
I
D M
P
D
T
J
, T
S TG
R
θ
J A
Li mi t
60
+20
300
2000
350
210
-5 5 to + 1 5 0
357
U ni t s
V
V
mA
mA
mW
O
T
A
= 2 5
O
C
T
A
= 7 5
O
C
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e
R a ng e
M a xi m um P o w e r D i s s i p a t i o n
Junction-to Ambient Thermal Resistance(PCB mounted)
2
Note:1.Maximum DC current limited by the package
2.Surface mounted on FR4 board, t<10 sec
3.Pulse width<300us, Duty cycle<2%
C
O
C /W
June 23,2016-REV.04
PAGE . 1
2N7002-AU
ELECTRICALCHARACTERISTICS
Pa r a me t e r
S t a t ic
Dr a in- S o ur c e Br e a k d o w n
Vo lt a g e
G a t e Thr e s ho ld Vo lt a g e
Dr a in- S o ur c e O n- St a t e
Re s is t a nc e
Dr a in- S o ur c e O n- St a t e
Re s is t a nc e
Z e r o G a t e Vo lt a g e Dr a in
Cur r e nt
Gate Body Leakage
Forward Transconductance
Dynamic
To t a l G a t e Cha r g e
Tur n- O n Time
Tur n- O f f Time
I np ut Ca p a c it a nc e
O ut p ut Ca p a c it a nc e
Re ve r s e Tr a ns f e r
Ca p a c it a nc e
S o ur c e - Dr a in Dio d e
Dio d e Fo r w a r d Vo lt a g e
Co nt inuo us Dio d e Fo r w a r d
Cur r e nt
P uls e Dio d e F o r w a r d
Cur r e nt
S y mb o l
Te s t Co nd it io n
M in.
Ty p .
M a x.
Unit s
B V
DSS
V
G S ( t h)
R
DS ( o n)
R
DS ( o n)
I
DS S
I
G SS
g
fS
V
G S
= 0 V , I
D
= 1 0 uA
V
DS
= V
G S
, I
D
= 2 5 0 uA
V
GS
=4.5V , I
D
=200mA
V
GS
=10V , I
D
=500mA
V
DS
=60V , V
GS
=0V
V
G S
= + 2 0 V , V
DS
= 0 V
V
D S
= 1 5 V , I
D
= 2 5 0 mA
60
1
-
-
-
-
100
-
-
-
-
-
-
-
-
2.5
4.0
V
V
Ω
3.0
1
+10
-
uA
uA
mS
Q
g
t
on
t
of f
C
is s
C
oss
C
rss
V
DS
= 1 5 V, I
D
= 2 0 0 mA
V
GS
=5V
V
DD
=30V , R
L
=150Ω
I
D
=200mA , V
GEN
=10V
R
G
=10Ω
-
-
-
-
0.8
21
30
24
13
8
-
-
nC
ns
-
-
-
-
pF
V
DS
= 2 5 V , V
G S
= 0 V
f = 1 . 0 M H
Z
-
-
V
SD
I
S
I
SM
I
S
=200mA , V
GS
=0V
-
-
-
-
-
0.82
-
-
1.3
300
2000
V
mA
mA
Switching
Test Circuit
V
IN
V
DD
R
L
V
OUT
Gate Charge
Test Circuit
V
GS
V
DD
R
L
R
G
1mA
R
G
June 23,2016-REV.04
PAGE . 2
2N7002-AU
1.0
1
I
DS
-Drain-to-S ource Current(A)
0.8
V
GS
=4V
I
DS
-Drain-to-S ource Current(A)
VGS=5V~10V
V
DS
=5V
0.8
0.6
0.4
0.2
0.6
0.4
0.2
0.0
0
1
2
3
4
5
V
GS
=3V
T
J
=125℃
T
J
=25℃
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage(V)
V
GS
-Gate-to-Source Voltage(V)
Fig.1 On-Region Characteristics
8
Fig.2 Transfer Characteristics
R
DS
(on)- On-Resistance (Normalized)
2.4
R
DS
(on)- On-Resistance(Ω)
6
2.0
V
GS
=10V, I
D
=500mA
4
V
GS
= 4.5V
2
V
GS
= 10V
0
1.6
1.2
V
GS
=4.5V, I
D
=200mA
0
0
0
1
1
1
0.8
0
25
50
I
DS
-Drain-to-Source Current(mA)
Temperature (℃)
75
100
125
150
175
Fig.3 On-Resistsnce vs. Drain current
Fig.4
On-Resistsnce
vs. Junction
1
8
6
I
DS
-Source to Drain Current(A)
I
D
=200mA
R
DS
(on)- On-Resistance(Ω)
0.1
4
T
j
=125℃
T
j
=25℃
0.01
T
j
=125℃
T
j
=25℃
2
0
0.001
0
0.3
0.6
0.9
1.2
0
V
GS
-Gate-to-Source Voltage(V)
2
4
6
8
10
V
SD
-Source-to-Drain Voltage(V)
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Dlode Characterlslcs
June 23,2016-REV.04
PAGE . 3
2N7002-AU
6
1.2
V
DS
=15V
I
D
=200mA
1.1
I
D
=250uA
V
GS
-Gate-to-Source Voltage(V)
5
4
3
2
1
0
0
BVDSS- Drain-to-Source
Voltage(V)
1.0
0.9
0.8
0
25
50
0.2
0.4
0.6
0.8
Qg(nC)
Temperature (℃)
75
100
125
150
175
Fig.7 Gate-Charge Characteristics
1.2
I
D
=250uA
Fig.8 Breakdown Voltage Variation vs.
Temperature
40
V
GS
= 0V
f = 1MHz
30
Vth-G-S Variance (V)
1.0
0.8
0.6
0.4
0.2
0
25
50
Capicitance (pF)
Ciss
20
Coss
10
Crss
0
Temperature (℃)
75
100
125
150
175
0
5
10
15
20
25
30
V
DS
-Drain-Source Voltage (V)
Fig.9 Threshold Voltage Variation with
Fig.10 Capacitance vs. Drain-Source Voltage
June 23,2016-REV.04
PAGE . 4
2N7002-AU
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
June 23,2016-REV.04
PAGE . 5
测试/测量
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