Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SORTED, DIE
| 参数名称 | 属性值 |
| 零件包装代码 | DIE |
| 包装说明 | UNCASED CHIP, X-XUUC-N |
| Reach Compliance Code | unknow |
| ECCN代码 | EAR99 |
| 配置 | SINGLE |
| 最小漏源击穿电压 | 60 V |
| 最大漏极电流 (ID) | 0.115 A |
| 最大漏源导通电阻 | 13.5 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 5 pF |
| JESD-30 代码 | X-XUUC-N |
| 元件数量 | 1 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | UNSPECIFIED |
| 封装形状 | UNSPECIFIED |
| 封装形式 | UNCASED CHIP |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | NO LEAD |
| 端子位置 | UPPER |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| 2N7002X | 2N7002MT1 | 2N7002MT2 | 2N7002M | |
|---|---|---|---|---|
| 描述 | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SORTED, DIE | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 |
| 包装说明 | UNCASED CHIP, X-XUUC-N | SMALL OUTLINE, R-PDSO-G3 | PLASTIC PACKAGE-3 | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknow | unknow | unknow | unknow |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小漏源击穿电压 | 60 V | 60 V | 60 V | 60 V |
| 最大漏极电流 (ID) | 0.115 A | 0.115 A | 0.115 A | 0.115 A |
| 最大漏源导通电阻 | 13.5 Ω | 13.5 Ω | 13.5 Ω | 13.5 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 5 pF | 5 pF | 5 pF | 5 pF |
| JESD-30 代码 | X-XUUC-N | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | UNSPECIFIED | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | UNSPECIFIED | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | UNCASED CHIP | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES |
| 端子形式 | NO LEAD | GULL WING | GULL WING | GULL WING |
| 端子位置 | UPPER | DUAL | DUAL | DUAL |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 | 1 |
| 针数 | - | 3 | 3 | 3 |
| 端子数量 | - | 3 | 3 | 3 |
电源技术
编程基础
DSP 与 ARM 处理器
PCB设计
PCB设计
安防电子
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
