NT5TU128M4BE
NT5TU64M8BE
NT5TU32M16BG
512Mb DDR2 SDRAM B-Die
Features
• 1.8V ± 0.1V Power Supply Voltage
• 4 internal memory banks
• Programmable CAS Latency: 3, 4, 5, and 6
• Programmable Additive Latency: 0, 1, 2, 3, and 4
• Write Latency = Read Latency -1
• Programmable Burst Length: 4 and 8
• Programmable Sequential / Interleave Burst
• OCD (Off-Chip Driver Impedance Adjustment)
• ODT (On-Die Termination)
• 4 bit prefetch architecture
• 1k page size for x 4 & x 8,
2k page size for x16
• Data-Strobes: Bidirectional, Differential
• Strong and Weak Strength Data-Output Driver
• Auto-Refresh and Self-Refresh
• Power Saving Power-Down modes
• 7.8 µs max. Average Periodic Refresh Interval
• Packages:
60 Ball BGA for x4/x8 components
84 Ball BGA for x16 component
• RoHS Compliance
Description
The 512Mb Double-Data-Rate-2 (DDR2) DRAMs is a high-
speed CMOS Double Data Rate 2 SDRAM containing
536,870,912 bits. It is internally configured as a quad-bank
DRAM.
The 512Mb chip is organized as either 32Mbit x 4 I/O x 4
bank, 16Mbit x 8 I/O x 4 bank or 8Mbit x 16 I/O x 4 bank
device. These synchronous devices achieve high speed dou-
ble-data-rate transfer rates of up to 533 Mb/sec/pin for gen-
eral applications.
The chip is designed to comply with all key DDR2 DRAM key
features: (1) posted CAS with additive latency, (2) write
latency = read latency -1, (3) normal and weak strength data-
output driver, (4) variable data-output impedance adjustment
and (5) an ODT (On-Die Termination) function.
All of the control and address inputs are synchronized with a
pair of externally supplied differential clocks. Inputs are
latched at the cross point of differential clocks (CK rising and
CK falling). All I/Os are synchronized with a single ended
DQS or differential DQS pair in a source synchronous fash-
ion. A 14 bit address bus for x4 and x8 organised compo-
nents and a 13 bit address bus for x16 components is used to
convey row, column, and bank address devices.
These devices operate with a single 1.8V+/-0.1V power sup-
ply and are available in BGA packages.
An Auto-Refresh and Self-Refresh mode is provided along
with various power-saving power-down modes.
REV 1.5
06/2008
1
©
NANYA TECHNOLOGY CORP
. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
NT5TU128M4BE
NT5TU64M8BE
NT5TU32M16BG
512Mb DDR2 SDRAM B-Die
Pin Configuration - 60 balls 0.8mmx0.8mm Pitch BGA Package (x4/x8)
<Top View >
See the balls through the package.
x4
1
VDD
NC
VDDQ
NC
VDDL
2
NC
VSSQ
DQ1
VSSQ
VREF
CKE
NC
BA0
A10/AP
VSS
A3
A7
VDD
A12
3
VSS
DM
VDDQ
DQ3
VSS
WE
BA1
A1
A5
A9
NC
A
B
C
D
E
F
G
H
J
K
L
7
VSSQ
DQS
VDDQ
DQ2
VSSDL
RAS
CAS
A2
A6
A11
NC
8
DQS
VSSQ
DQ0
VSSQ
CK
CK
CS
A0
A4
A8
A13
VSS
VDD
9
VDDQ
NC
VDDQ
NC
VDD
ODT
x8
1
VDD
DQ6
VDDQ
DQ4
VDDL
2
NU,/RDQS
VSSQ
DQ1
VSSQ
VREF
CKE
NC
BA0
A10/AP
VSS
A3
A7
VDD
A12
3
VSS
DM/RDQS
VDDQ
DQ3
VSS
WE
BA1
A1
A5
A9
NC
A
B
C
D
E
F
G
H
J
K
L
7
VSSQ
DQS
VDDQ
DQ2
VSSDL
RAS
CAS
A2
A6
A11
NC
8
DQS
VSSQ
DQ0
VSSQ
CK
CK
CS
A0
A4
A8
A13
VSS
VDD
9
VDDQ
DQ7
VDDQ
DQ5
VDD
ODT
REV 1.5
06/2008
2
©
NANYA TECHNOLOGY CORP
. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
NT5TU128M4BE
NT5TU64M8BE
NT5TU32M16BG
512Mb DDR2 SDRAM B-Die
Pin Configuration - 84 balls 0.8mmx0.8mm Pitch BGA Package (x16)
<Top View >
See the balls through the package.
x 16
1
VDD
DQ14
VDDQ
DQ12
VDD
DQ6
VDDQ
DQ4
VDDL
2
NC
VSSQ
DQ9
VSSQ
NC
VSSQ
DQ1
VSSQ
VREF
CKE
NC
BA0
A10/AP
VSS
A3
A7
VDD
A12
3
VSS
UDM
VDDQ
DQ11
VSS
LDM
VDDQ
DQ3
VSS
WE
BA1
A1
A5
A9
NC
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
7
VSSQ
UDQS
VDDQ
DQ10
VSSQ
LDQS
VDDQ
DQ2
VSSDL
RAS
CAS
A2
A6
A11
NC
8
UDQS
VSSQ
DQ8
VSSQ
LDQS
VSSQ
DQ0
VSSQ
CK
CK
CS
A0
A4
A8
NC
VSS
VDD
9
VDDQ
DQ15
VDDQ
DQ13
VDDQ
DQ7
VDDQ
DQ5
VDD
ODT
REV 1.5
06/2008
3
©
NANYA TECHNOLOGY CORP
. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
NT5TU128M4BE
NT5TU64M8BE
NT5TU32M16BG
512Mb DDR2 SDRAM B-Die
Input/Output Functional Description
Symbol
CK, CK
Type
Input
Function
Clock:
CK and CK are differential clock inputs. All address and control input signals are sampled
on the crossing of the positive edge of CK and negative edge of CK. Output (read) data is refer-
enced to the crossings of CK and CK (both directions of crossing).
Clock Enable:
CKE high activates and CKE low deactivates internal clock signals and device
input buffers and output drivers. Taking CKE low provides Precharge Power-Down and Self-
Refresh operation (all banks idle), or Active Power-Down (row Active in any bank). CKE is syn-
chronous for power down entry and exit and for Self-Refresh entry. CKE is asynchronous for Self-
Refresh exit. CKE must be maintained high throughout read and write accesses. Input buffers,
excluding CK, CK, ODT and CKE are disabled during Power Down. Input buffers, excluding CKE
are disabled during Self-Refresh.
Chip Select:
All command are masked when CS is registered high. CS provides for external rank
selection on systems with multiple memory ranks. CS is considered part of the command code.
Command Inputs:
RAS, CAS and WE (along with CS) define the command being entered.
Input Data Mask:
DM is an input mask signal for write data. Input data is masked when DM is
sampled high coincident with that input data during a Write access. DM is sampled on both edges
of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS loading. LDM
and UDM are the input mask signals for x16 components and control the lower or upper bytes. For
x8 components the data mask function is disabled, when RDQS / RQDS are enabled by EMRS(1)
command.
Bank Address Inputs:
BA0 and BA1 define to which bank an Active, Read, Write or Precharge
command is being applied. BA0 and BA1 also determines if the mode register or extended mode
register is to be accessed during a MRS or EMRS cycle.
Address Inputs:
Provides the row address for Activate commands and the column address and
Auto-Precharge bit A10 (=AP) for Read/Write commands to select one location out of the memory
array in the respective bank. A10 (=AP) is sampled during a Precharge command to determine
whether the Precharge applies to one bank (A10=low) or all banks (A10=high). If only one bank is
to be precharged, the bank is selected by BA0 and BA1. The address inputs also provide the op-
code during Mode Register Set commands.
Row address A13 is used on x4 and x8 components only.
Data Inputs/Output:
Bi-directional data bus.
Data Strobe:
output with read data, input with write data. Edge aligned with read data, centered
with write data. For the x16, LDQS corresponds to the data on LDQ0 - LDQ7; UDQS corresponds
to the data on UDQ0-UDQ7. The data strobes DQS, LDQS, UDQS may be used in single ended
mode or paired with the optional complementary signals DQS, LDQS, UDQS to provide differen-
tial pair signaling to the system during both reads and writes. An EMRS(1) control bit enables or
disables the complementary data strobe signals.
Read Data Strobe:
For the x8 components a RDQS, RDQS pair can be enabled via the EMRS(1)
for read timing. RDQS, RDQS is not supported on x4 and x16 components. RDQS, RDQS are
edge-aligned with read data. If RDQS, RDQS is enabled, the DM function is disabled on x8 com-
ponents.
On Die Termination:
ODT (registered HIGH) enables termination resistance internal to the DDR2
SDRAM. When enabled, ODT is applied to each DQ, DQS, DQS and DM signal for x4 and DQ,
DQS, DQS, RDQS, RDQS and DM for x8 configurations. For x16 configuration ODT is applied to
each DQ, UDQS, UDQS, LDQS, LDQS, UDM and LDM signal. The ODT pin will be ignored if the
EMRS(1) is programmed to disable ODT.
No Connect:
No internal electrical connection is present.
Supply
Supply
Supply
Supply
Supply
Supply
Supply
DQ Power Supply:
1.8V +/- 0.1V
DQ Ground
DLL Power Supply:
1.8V +/- 0.1V
DLL Ground
Power Supply:
1.8V +/- 0.1V
Ground
SSTL_1.8 reference voltage
CKE
Input
CS
RAS, CAS, WE
Input
Input
DM, LDM, UDM
Input
BA0, BA1
Input
A0 - A13
Input
DQ
DQS, (DQS)
LDQS, (LDQS),
UDQS,(UDQS)
Input/Output
Input/Output
RDQS, (RDQS)
Input/Output
ODT
Input
NC
V
DDQ
V
SSQ
V
DDL
V
SSDL
V
DD
V
SS
V
REF
REV 1.5
06/2008
4
©
NANYA TECHNOLOGY CORP
. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
NT5TU128M4BE
NT5TU64M8BE
NT5TU32M16BG
512Mb DDR2 SDRAM B-Die
Ordering Information
Green
Org.
Part Number
NT5TU128M4BE-5A
NT5TU128M4BE-37B
128M x 4
NT5TU128M4BE-3C
NT5TU128M4BE-25C
NT5TU128M4BE-25D
NT5TU64M8BE-5A
NT5TU64M8BE-37B
64M x 8
NT5TU64M8BE-3C
NT5TU64M8BE-25C
NT5TU64M8BE-25D
NT5TU32M16BG-5A
32M x 16
NT5TU32M16BG-37B
NT5TU32M16BG-3C
NT5TU32M16BG-25D
Note:
84ball BGA
0.8mmx0.8mm
Pitch
60ball BGA
0.8mmx0.8mm
Pitch
60ball BGA
0.8mmx0.8mm
Pitch
Package
Speed
Clock (MHz)
200
266
333
400
400
200
266
333
400
400
200
266
333
400
CL-t
RCD
-t
RP
3-3-3
4-4-4
5-5-5
5-5-5
6-6-6
3-3-3
4-4-4
5-5-5
5-5-5
6-6-6
3-3-3
4-4-4
5-5-5
6-6-6
REV 1.5
06/2008
5
©
NANYA TECHNOLOGY CORP
. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
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