JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
MMDT5451
FEATURES
Epitaxial Planar Die Construction
Ideal for low Power Amplification and Switching
One 5551(NPN), one 5401(PNP)
E1
B1
C2
SOT-363
DUAL TRANSISTOR (NPN+PNP)
C1
B2
E2
MRKING:KNM
MAXIMUM RATINGS NPN 5551 (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θ
JA
T
J
T
stg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Value
180
160
6
0.2
0.2
625
150
-55-150
Units
V
V
V
A
W
℃/W
℃
℃
E1, B1, C1 = PNP 5401
E2, B2, C2 = NPN 5551
ELECTRICAL CHARACTERISTICS NPN 5551 (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE1
DC current gain
h
FE2
h
FE3
Collector-emitter saturation voltage
V
CE(sat)
Test
conditions
Min
180
160
6
0.05
0.05
80
100
30
0.15
0.2
1
1
6.0
100
300
8.0
V
V
V
V
pF
MHz
dB
300
T
yp
Max
Unit
V
V
V
μA
μA
I
C
=100μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=10μA,I
C
=0
V
CB
=120V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=5V,I
C
=1mA
V
CE
=5V,I
C
=10mA
V
CE
=5V,I
C
=50mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
CE
= 10V, I
C
= 10mA, f = 100MHz
V
CE
= 5.0V, I
C
= 200µA,
R
S
= 1.0kΩ,f = 1.0kHz
Base-emitter saturation voltage
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
V
BE(sat)
C
obo
f
T
NF
A,Dec,2010
MAXIMUM RATINGS PNP 5401 (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θ
JA
T
J
T
stg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Value
-160
-150
-5
-0.2
0.2
625
150
-55-150
Units
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS PNP 5401 (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE1
DC current gain
h
FE2
h
FE3
Collector-emitter saturation voltage
V
CE(sat)
Test
conditions
M
in
-160
-150
-5
-50
-50
50
100
50
-0.2
-0.5
-1
-1
6.0
100
300
8.0
V
V
V
V
pF
MHz
dB
300
Typ
Max
Unit
V
V
V
nA
nA
I
C
=-100μA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-10μA,I
C
=0
V
CB
=-120V,I
E
=0
V
EB
=-3V,I
C
=0
V
CE
=-5V,I
C
=-1mA
V
CE
=-5V,I
C
=-10mA
V
CE
=-5V,I
C
=-50mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
V
CB
=-10V, f = 1.0MHz, I
E
= 0
V
CE
=-10V, I
C
=-10mA, f = 100MHz
V
CE
=-5.0V, I
C
=-200µA,
R
S
= 10Ω,f = 1.0kHz
Base-emitter saturation voltage
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
V
BE(sat)
C
obo
f
T
NF
A,Dec,2010
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