BC846AW-AU ~ BC850CW-AU
NPN GENERAL PURPOSE TRANSISTORS
VOLTAGE
FEATURES
• General purpose amplifier applications
• NPN epitaxial silicon, planar design
•
•
•
•
•
Collector current IC = 100mA
Acqire quality system certificate : TS16949
AEC-Q101 qualified
Lead free in comply with EU RoHS 2011/65/EU directives
Green molding compound as per IEC61249 Std. .
(Halogen Free)
30/45/65 Volts
POWER
250 mWatts
MECHANICAL DATA
• Case: SOT-323, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0001 ounce, 0.005 gram
Device Marking:
BC846AW-AU=46A BC847AW-AU=47A BC848AW-AU=48A
BC846BW-AU=46B BC847BW-AU=47B BC848BW-AU=48B BC849BW-AU=49B BC850BW-AU=50B
BC847CW-AU=47C BC848CW-AU=48C BC849CW-AU=49C BC850CW-AU=50C
ABSOLUTE RATINGS
Parameter
Collector - E mitter Voltage
BC846W-AU
BC847W-AU, BC850W-AU
BC848W-AU, BC849W-AU
BC846W-AU
BC847W-AU, BC850W-AU
BC848W-AU, BC849W-AU
BC846W-AU
BC847W-AU, BC850W-AU
BC848W-AU, BC849W-AU
Symbol
V
CEO
Value
65
45
30
80
50
30
6
6
5
100
Units
V
Collector - B ase Voltage
V
CBO
V
Emitter - Base Voltage
Collector Current - Continuous
V
EBO
I
C
V
mA
THERMAL CHARACTERISTICS
Parameter
Max Power Dissipation (Note 1)
Thermal Resistance
Junction Temperature
Storage Temperature
Symbol
P
TOT
R
JA
R
JC
T
J
T
STG
Value
250
500
100
-55 to 150
-55 to 150
Units
mW
O
C/W
O
C
C
O
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
April 23,2013-REV.02
PAGE . 1
BC846AW-AU ~ BC850CW-AU
ELECTRICAL CHARACTERISTICS
P arame ter
B C 84 6AW-A U,B W-AU
C ollec tor - E mi tte r B re akd own Vo ltag e B C 84 7AW-A U/B W-AU/C W-A U,B C 85 0B W-A U/C W-A U
B C 84 8AW-A U/B W-AU/C W-A U,B C 84 9B W-A U/C W-A U
C ollec tor - B ase B re akd own Vo ltag e
B C 84 6AW-A U,B W-AU
B C 84 7AW-A U/B W-AU/C W-A U,B C 85 0B W-A U/C W-A U
B C 84 8AW-A U/B W-AU/C W-A U,B C 84 9B W-A U/C W-A U
B C 84 6AW-A U,B W-AU
B C 84 7AW-A U/B W-AU/C W-A U,B C 85 0B W-A U/C W-A U
B C 84 8AW-A U/B W-AU/C W-A U,B C 84 9B W-A U/C W-A U
S ymb ol
Te st C o nd i ti on
MIN.
65
45
30
80
50
30
6
6
5
-
-
TYP.
-
MA X .
-
Uni ts
V
V
(B R)
C E O IC =10 mA , IB =0
V
(B R)
C B O IC =10
A
, IE =0
-
-
V
E mi tter - B as e B reak do wn Volta ge
V
(BR)
E B O IE =10
A
, IC =0
-
-
V
E mi tter-B a se C uto ff C urrent
C ollec tor-B as e C utoff C urre nt
D C C urrent Gai n
B C 84 6~B C 84 8 S uffi x "AW-A U"
B C 84 6~B C 85 0 S uffi x "B W-A U"
B C 84 7~B C 85 0 S uffi x "C W-A U"
B C 84 6~B C 84 8 S uffi x "AW-A U"
B C 84 6~B C 85 0 S uffi x "B W-A U"
B C 84 7~B C 85 0 S uffi x "C W-A U"
I
E B O
I
C B O
V E B =5
V C B =30 V, IE =0
V C B =30 V, IE =0,T
J
=1 50
O
C
IC =10
A
, V C E =5V
-
-
90
15 0
2 70
18 0
2 90
5 20
-
0 .7
0 .9
0.66
-
-
1 00
15
5
-
22 0
4 50
80 0
0 .25
0.6
-
0.7
0 .77
4.5
nA
nA
A
-
h
FE
-
110
2 00
4 20
-
-
0.5 8
-
-
D C C urrent Gai n
h
FE
V
C E (S AT)
V
C E (S AT)
V
C E (S AT)
C
CBO
IC =2mA , V C E =5V
IC = 10 mA , IB = 0 .5mA
IC = 10 0mA , IB = 5.0 mA
IC = 10 mA , IB = 0 .5mA
IC = 10 0mA , IB = 5mA
IC =2mA , V C E =5V
IC =10 mA , V C E =5 V
V C B = 10 V, IE = 0, f=1MHz
-
C ollec tor - E mi tte r S a tura ti on Vo ltag e
B a se - E mi tter S aturati on Volta ge
B a se - E mi tter Voltage
C ollec tor - B ase C a pac i tance
V
V
V
pF
April 23,2013-REV.02
PAGE . 2
MEMS传感器
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