SSF7504A
75V N-Channel MOSFET
Features
Advanced trench process technology
Ideal
for
convertors
and power controls
High density cell design for ultra low R
dson
Fully characterized Avalanche voltage and current
Avalanche Energy 100% test
I
D
=220A
BV=75V
R
ds(on)
=2.7mΩ(Typ.)
Description
The SSF7504A utilizes the latest processing techniques to achieve high cell
density, low on-resistance and high repetitive avalanche rating. These features
make this device extremely efficient and reliable for use in power switching
applications and a wide variety of other applications.
S
G
TO-263 (D
2
PAK)
D
Application
Power switching applications
Absolute Maximum Ratings
Symbol
I
D
@T
c
=25°C
I
D
@T
c
=100°C
I
DM
P
D
@T
C
=25°C
V
GS
dv/dt
E
AS
T
J
T
STG
Parameter
Continuous
Drain Current,V
GS
@10V
Continuous
Drain Current,V
GS
@10V
Pulsed
Drain Current
①
Power
Dissipation
Linear
Derating Factor
Gate-to-Source
Voltage
Peak
Diode Recovery Voltage
Single
Pulse Avalanche Energy
②
Operating Junction and
Storage Temperature Range
Max.
220
170
880
370
2.0
±20
20
960
–55 to +175
W
W/°C
V
v/ns
mJ
°C
A
Units
Thermal Resistance
Symbol
R
θJC
R
θJA
Parameter
Junction-to-Case
Junction-to-Ambient
Min.
—
—
Typ.
0.41
—
Max.
—
62
Units
°C/W
Electrical Characteristics
(T
J
=25 °C unless otherwise specified)
Symbol
BV
DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
Parameter
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
On-resistance
Gate
Threshold Voltage
Forward
Transconductance
Drain-to-Source
Leakage Current
Min.
75
—
2.0
—
—
—
1/5
Typ.
—
2.7
3.1
65
—
—
Max. Units
—
4
4.0
—
10
50
μA
V
mΩ
V
S
Test Conditions
V
GS
=0V, I
D
=250μA
V
GS
=10V, I
D
=40A
V
DS
=V
GS
, I
D
=250μA
V
DS
=5V, I
D
=30A
V
DS
=80V, V
GS
=0V
V
DS
=80V,
V
GS
=0V, T
J
=150°C
75V N-Channel MOSFET
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-to-Source
Forward Leakage
Gate-to-Source
Reverse Leakage
Total
Gate Charge
Gate-to-Source
Charge
Gate-to-Drain("Miller")
Charge
Turn-on
Delay Time
Rise
Time
Turn-Off
Delay Time
Fall
Time
Input
Capacitance
Output
Capacitance
Reverse
Transfer Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
140
30
36
22
35
77.8
19.8
7005
600
280
100
-100
—
—
—
—
—
—
—
—
—
—
pF
nS
nC
nA
V
GS
=20V
V
GS
=-20V
I
D
=30A
V
DD
=30V
V
GS
=10V
V
DD
= 3 0 V
I
D
=2A, R
L
=15Ω
R
G
=2.5Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHZ
SSF7504A
Source-Drain Ratings and Characteristics
Sym.
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
①
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-on Time
Min.
—
—
—
－
－
Typ.
—
—
—
80
270
Max.
220
A
880
1.3
—
—
V
nS
nC
Units
Test Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
=25°C, I
S
=40A, V
GS
=0V
③
T
J
=25°C , I
F
=75A
di/dt=100A/μs
③
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+ L
D
)
Notes
①
Repetitive rating; pulse width limited by max junction temperature.
②
Test condition: L =0.3mH, I
D
= 80A, V
DD
= 37.5V
③
Pulse width≤300μS; duty cycle≤1.5% R
G
= 25Ω Starting T
J
= 25°C
V
dss
E
AS
Test Circuit
2/5
Gate
Charge Test Circuit
75V N-Channel MOSFET
SSF7504A
Switching Time Test Circuit
Switching Waveforms
Figure 1. Transfer Characteristic
Figure 2. Capacitance
vs
Drain-to-Source Voltage
Figure 3. On Resistance vs Junction Temperature
Figure 4. Breakdown Voltage vs Junction
Temperature
3/5
75V N-Channel MOSFET
SSF7504A
Figure
5. Gate to Source Voltage vs Total
Gate Charge
Figure 6.
Source Current vs
Source-Drain
Diode Forward Voltage
Figure
7.
Safe Operation Area
Figure 8. Max Drain Current vs Junction Temperature
Figure 9. Transient Thermal Impedance Curve
4/5
75V N-Channel MOSFET
TO-263/D
2
PAK
Mechanical
Data
SSF7504A
www.goodarksemi.com
5/5
Doc.USSSF7504Ax2.0
微控制器 MCU
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