MD60S18M2
Glass Passivated Three
Phase Rectifier Bridge
V
RRM
800 to 1800V
I
D
60 Amp
Applications
Three phase rectifiers for power supplies
Rectifiers for DC motor field supplies
Battery charger rectifiers
Input rectifiers for variable frequency drives
Circuit
+
~
~
~
-
Features
Three phase bridge rectifier
Blocking voltage:800 to 1800V
Heat transfer through aluminum oxide DBC
ceramic isolated metal baseplate
Glass passivated chip
UL recognized applied for file no. E360040
Module Type
TYPE
MD60S08M2
MD60S12M2
MD60S16M2
MD60S18M2
V
RRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
Maximum Ratings
Symbol
I
D
I
FSM
i
2
t
Visol
Tvj
Tstg
Mt
Ms
Weight
Conditions
Three phase, full wave
Tc=110℃
t=10mS Tvj =45℃
t=10mS Tvj =45℃
a.c.50HZ;r.m.s.;1min
Values
60
460
1050
3000
-40 to +150
-40 to +125
5±15%
5±15%
130
Units
A
A
A
2
s
V
℃
℃
Nm
Nm
g
To terminals(M5)
To heatsink(M5)
Module (Approximately)
Thermal Characteristics
Symbol
Rth(j-c)
Rth(c-s)
Per diode
Module
Conditions
Values
1.45
0.07
Units
℃/W
℃/W
Electrical Characteristics
Symbol
V
FM
I
RD
T=25℃ I
F
=150A
T
vj
=25℃ V
RD
=V
RRM
T
vj
=150℃ V
RD
=V
RRM
Conditions
Values
Min.
－
－
Typ.
1.45
－
Max.
1.80
0.3
5
Units
V
mA
mA
Document Number: S-M0017
Rev.1.0, May.31, 2013
www.apt-semi.com
1
MD60S18M2
Performance Curves
200
A
150
120
W
100
60
typ.
50
max.
I
F
0
0
V
F
0.5
1.0
1.5
V 2.0
25℃
- - -125℃
P
vtot
0
0 I
D
25
A 50
Fig1. Forward Characteristics
2.0
℃/
W
1.5
400
1.0
200
0.5
Z
th(j-
C
)
600
Fig2. Power dissipation
50HZ
A
0
0.001
0.01
0.1
1.0
10
S 100
0
1
10
cycles 100
Fig3. Transient thermal impedance
Fig4. Max Non-Repetitive Forward Surge
Current
100
A
80
60
40
20
I
D
0
0
Tc
50
100
℃
150
Fig5.Forward Current Derating Curve
Document Number: S-M0017
Rev.1.0, May.31, 2013
www.apt-semi.com
2
Microchip MCU
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