LITE-ON
Features
TECHNOLOGY
CORPORATION
Property of Lite-On Only
* Meet ROHS, Green Product.
* Side Looking Special For LCD Backlight.
* Ultra Bright AlInGaP Chip LED.
* Package In 8mm Tape On 7" Diameter Reels.
* EIA STD package.
* I.C. compatible.
* Compatible With Automatic Placement Equipment.
* Compatible With Infrared And Vapor Phase Reflow Solder Process.
Package
Dimensions
Part No.
LTST-S110KGKT
Notes:
1. All dimensions are in millimeters (inches).
Lens
Water Clear
Source Color
AlInGaP Green
2. Tolerance is ± 0.10 mm (.004") unless otherwise noted.
Part
No. : LTST-S110KGKT
Page :
1
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11
BNS-OD-C131/A4
LITE-ON
Absolute
Maximum
Ratings
At
TECHNOLOGY
Ta=25
℃
CORPORATION
Property of Lite-On Only
Parameter
Power Dissipation
Peak Forward Current
(1/10 Duty Cycle, 0.1ms Pulse Width)
DC Forward Current
Derating Linear From 50°C
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Wave Soldering Condition
Infrared Soldering Condition
Vapor Phase Soldering Condition
LTST-S110KGKT
75
80
30
0.4
5
-55°C to + 85°C
-55°C to + 85°C
260°C For 5 Seconds
260°C For 5 Seconds
215°C For 3 Minutes
Unit
mW
mA
mA
mA/°C
V
Part
No. : LTST-S110KGKT
Page :
2
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BNS-OD-C131/A4
LITE-ON
Suggestion Profile:
TECHNOLOGY
CORPORATION
Property of Lite-On Only
(1) Suggestion IR Reflow Profile For Normal Process
(2) Suggestion IR Reflow Profile For Pb Free Process
R e c o m m e n d e d P r o file B e t w e e n A s s e m b le A n d H e a t -R e s is t a n c e L in e
T h e P r o file is a v a ila b le t h a t m u s t t o u s e S n A g
Cu
s o ld e r p a s t e
Part
No. : LTST-S110KGKT
Page :
3
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BNS-OD-C131/A4
LITE-ON
Electrical
Optical
Characteristics
Symbol
TECHNOLOGY
At
Ta=25
℃
Min.
Typ.
CORPORATION
Property of Lite-On Only
Parameter
Part No.
LTST-
S110KGKT
Max.
Unit
Test Condition
IF = 20mA
Note 1
Note 2 (Fig.6)
Measurement
@Peak (Fig.1)
Note 3
Luminous Intensity
IV
18.0
35.0
mcd
Viewing Angle
2
θ
1/2
S110KGKT
130
deg
Peak Emission Wavelength
λ
P
S110KGKT
574
nm
Dominant Wavelength
λ
d
S110KGKT
571
nm
Spectral Line Half-Width
Δλ
S110KGKT
15
nm
Forward Voltage
VF
S110KGKT
2.0
2.4
V
IF = 20mA
Reverse Current
IR
S110KGKT
10
μ
A
VR = 5V
VF = 0
f = 1MHZ
Capacitance
C
S110KGKT
40
PF
Notes: 1. Luminous intensity is measured with a light sensor and filter combination that approximates the
CIE eye-response curve.
2.
θ
1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
3. The dominant wavelength,
λ
d is derived from the CIE chromaticity diagram and represents the
single wavelength which defines the color of the device.
Part
No. : LTST-S110KGKT
Page :
4
of
11
BNS-OD-C131/A4
LITE-ON
TECHNOLOGY
CORPORATION
Property of Lite-On Only
Bin Code List
Forward Voltage
Bin Code
4
5
6
7
8
Min.
1.90
2.00
2.10
2.20
2.30
Unit: V @20mA
Max.
2.00
2.10
2.20
2.30
2.40
Tolerance on each Forward Voltage bin is +/-0.1 volt
Luminous Intensity
Bin Code
M
N
P
Min.
18.0
28.0
45.0
Tolerance on each Intensity bin is +/-15%
Dominant Wavelength
Bin Code
C
D
E
Min.
567.5
570.5
573.5
Unit : nm @20mA
Max.
570.5
573.5
576.5
Unit : mcd @20mA
Max.
28.0
45.0
71.0
Tolerance for each Dominate Wavelength bin is +/- 1nm
Part
No. : LTST-S110KGKT
Page :
5
of
11
BNS-OD-C131/A4
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