EN29LV400A
EN29LV400A
4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
FEATURES
•
3V, single power supply operation
- Full voltage range: 2.7-3.6 volt read and write
operations for battery-powered applications.
- Regulated voltage range: 3.0-3.6 volt read
and write operations for compatibility with
high performance 3.3 volt microprocessors.
•
High performance
- Access times as fast as 45 ns
•
Low power consumption (typical values at 5
MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1
μA
typical standby current (standard access
time to active mode)
•
Flexible Sector Architecture:
- One 16 K-byte, two 8 K-byte, one 32 K-byte,
and seven 64 K-byte sectors (byte mode)
- One 8 K-word, two 4 K-word, one 16 K-word
and seven 32 K-word sectors (word mode)
•
Sector protection:
- Hardware locking of sectors to prevent
program or erase operations within individual
sectors
- Additionally, temporary Sector Unprotect
allows code changes in previously locked
sectors.
•
High performance program/erase speed
- Byte/Word program time: 8µs typical
- Sector erase time: 500ms typical
•
JEDEC Standard Embedded Erase and
Program Algorithms
•
JEDEC standard DATA# polling and toggle
bits feature
•
Single Sector and Chip Erase
•
Sector Unprotect Mode
•
Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
•
triple-metal double-poly triple-well CMOS
Flash Technology
•
Low Vcc write inhibit < 2.5V
•
minimum 100K program/erase endurance
cycle
•
Package Options
- 48-pin TSOP (Type 1)
- 48-ball 6mm x 8mm TFBGA
•
Commercial and Industrial Temperature
Range
GENERAL DESCRIPTION
The EN29LV400A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 524,288 bytes or 256,144 words. Any byte can be programmed typically in 8µs. The
EN29LV400A features 3.0V voltage read and write operation, with access times as fast as 45ns to
eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV400A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain
a minimum of 100K program/erase cycles on each Sector.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2005 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/04/25
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
