PBSS123
100V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
Features
100 V
Current
170 mA
SOT-23
Unit: inch(mm)
R
DS(ON)
, V
GS
@10V, I
D
@170mA<6Ω
R
DS(ON)
, V
GS
@4.5V, I
D
@130mA<10Ω
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc
ESD Protected 2KV HBM
Lead free in compliance with EU RoHS 2011/65/EU
directive
Green molding compound as per IEC61249 Std..
(Halogen Free)
Mechanical Data
Case: SOT-23 Package
Terminals: Solderable per MIL-STD-750, Method 2026
TOP VIEW
FIG.183
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 4)
Power Dissipation
T
a
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
R
θJA
LIMIT
o
UNITS
V
V
mA
mA
mW
mW/
o
C
o
100
+20
170
680
500
4
-55~150
250
o
Operating Junction and Storage Temperature Range
Typical Thermal Resistance
-
Junction to Ambient
(Note 3)
C
C/W
August 1,2016-REV.00
Page 1
PBSS123
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
(Note 5)
o
SYMBOL
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
tr
td
(off)
tf
TEST CONDITION
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
=170mA
V
GS
=4.5V, I
D
=130mA
V
DS
=80V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
MIN.
100
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
1.7
4
4.5
-
-
1.8
0.4
0.3
45
14
7.8
3.4
19
8.2
20
MAX.
-
2.5
6
10
1
+10
-
-
-
-
-
-
-
-
-
-
UNITS
V
V
Ω
uA
uA
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
V
DS
=30V, I
D
=170mA,
V
GS
=10V
(Note 1,2)
V
DS
=25V, V
GS
=0V,
f=1.0MHZ
V
DD
=30V, I
D
=170mA,
V
GS
=10V,
R
G
=6Ω
(Note 1,2)
nC
pF
ns
I
S
V
SD
---
I
S
=170mA, V
GS
=0V
-
-
-
0.9
170
1.3
mA
V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4. The maximum current rating is package limited.
5. Guaranteed by design, not subject to production testing.
August 1,2016-REV.00
Page 2
PBSS123
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Diode Characteristics
August 1,2016-REV.00
Page 3
PBSS123
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Threshold Voltage Variation with Temperature
Fig.9 Capacitance vs. Drain-Source Voltage
August 1,2016-REV.00
Page 4
PBSS123
PART NO PACKING CODE VERSION
PART NO PACKING CODE
Package Type
SOT-23
SOT-23
Packing Type
3K pcs / 7” reel
12K pcs / 13” reel
Marking
A76
A76
Version
Halogen free
Halogen free
BSS123_R1_00001
BSS123_R2_00001
MOUNTING PAD LAYOUT
August 1,2016-REV.00
Page 5
详细参数
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