LVP640
N-Channel 200V Power MOSFET
Features:
Avalanche Rugged Technology
Rugged Gate Oxide Technology
High di/dt Capability
Improved Gate Charge
Application
DC-DC Converters
UPS & Monitors
High Power Switching
Car Inventer
B
VDSS
= 200 V,
R
DS(ON )
= 0.18 ,
Typ = 0.15
ID = 18 A
Absolute Maximum Ratings
(T
A
=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
=25℃
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
a
Symbol
V
DSS
V
GSS
I
D
I
DM
T
C
=25℃
P
D
T
J,
T
stg
I
AS
b
Limit
200
±25
18
11.4
72
140
-55 to 150
18
300
62.5
0.9
Unit
V
V
A
A
W
℃
A
mJ
℃/W
T
C
=100℃
Operating Junction and Storage Temperature Range
Avalanche Current
Avalanche Energy with Single Pulse
E
AS
R
θJA
R
θJC
Thermal Resistance-Junction to Ambient (max.)
*
Thermal Resistance-Junction to Case
a. Pulse width limited by safe operating area
b. Starting Tj=25℃, L = 1.32mH, I
AS
=18A, V
DD
= 50
V
, R
G
= 25
*
The device mounted on 1in
2
FR4 board with 2 oz copper
Rev.1, Nov. 2010
01
LVP640
N-Channel 200V Power MOSFET
Electrical Characteristics
(T
A
=25℃ Unless Otherwise Specified)
Symbol
STATIC
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
G
FS(ON)
DYNAMIC
Qg
Qgs
Qgd
C
iss
C
oss
C
rss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off
Turn-Off
Delay Time
Fall Time
V
DS
=100V, I
D
=18A,
R
G
=25
V
DS
=25V, V
GS
=0V,
f=1MHz
V
DS
=160V, V
GS
=10V,
I
D
=18A
37
6.3
18.3
870
165
60
15
125
100
50
1130
215
80
40
260
210
110
ns
pF
48
nC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Forward Transconductance
V
GS
=0V, I
D
=250µA
V
DS
=V
GS
, I
D
=250µA
V
GS
=±25V
V
DS
=Max Rating, V
GS
=0V
V
GS
=10V, I
D
=9A
V
DS
=30V, I
D
=9A
0.15
11
200
2.0
4.0
±100
1
0.18
S
V
V
nA
µA
Parameter
Limit
Min.
Typ.
Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Characteristic
Continuous Source current
Pulsed Source Current
Diode Forward voltage-------------
Reverse Recovery Time
Reverse Recovery Charge
170
0.99
Min.
------
Typ.
Max.
18
72
1.5
V
ns
nC
Units
A
Test Condition
Integral reverse PN diode in The
MOSFET
I
S
=18A , V
GS
= 0V
I
F
= 18A, V
GS
= 0V,
dI
F
/ dt = 100A/µs
Note:
Pulse test: pulse width <= 300us, duty cycle<= 2%
Rev.1, Nov. 2010
02
LVP640
N-Channel 200V Power MOSFET
Typical Characteristics (TJ =25
℃
Noted)
Rev.1, Nov. 2010
03
LVP640
N-Channel 200V Power MOSFET
Typical Characteristics (TJ =25
℃
Noted)
Rev.1, Nov. 2010
04
LVP640
N-Channel 200V Power MOSFET
Test Circuit and Waveform
Rev.1, Nov. 2010
05
嵌入式系统
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