UM8515
20V P-Channel Power MOSFET
UM8515
SOT23-6
General Description
The UM8515 is a low threshold P-channel MOSFET, have extremely low on-resistance. This
benefit provides the designer with an extremely efficient device for use in battery and load
management applications. The devices use a space-saving, small-outline SOT23-6 package.
Applications
Battery Packs
Battery-powered Portable Equipment
Cellular and Cordless Telephones
Features
Drain-Source Voltage(max)：-20V
Low On-Resistance：
90mΩ@V
GS
=-4.5V
110mΩ@V
GS
=-2.5V
Continuous Drain Current(max)：-2A@25℃
Pin Configurations
Top View
XX: Week Code
UM8515
SOT23-6
Ordering Information
Part Number
UM8515
Packaging Type
SOT23-6
Marking Code
UCK
Shipping Qty
3000pcs/7 Inch
Tape & Reel
Absolute Maximum Ratings
Symbol
V
DSS
V
GS
I
D
I
DM
P
D
T
J
Tstg
R
θJA
Parameter
Drain-Source voltage
Gate-Source voltage
Continuous Drain Current
Drain Current Pulsed
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance, Junction-to-Ambient
Value
-20
±8
-2.0
-10
0.7
-55~150
-55~150
100
Units
V
V
A
A
W
℃
℃
℃
/W
________________________________________________________________________
http://www.union-ic.com Rev.02 Jan.2010
1/5
UM8515
Electrical Characteristics (T
J
=25
℃
, Unless otherwise noted)
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
Off Characteristics
BV
DSS
I
DSS
I
GSS
Drain to Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate-to-Source
Leakage Current
Static
Drain-to-Source
On-Resistance
Gate Threshold
Voltage
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Threshold Gate
Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Forward Diode
Voltage
V
GS
=-4.5V, V
DS
=-6V,
R
L
=6Ω,R
G
=6Ω
V
DS
=-6V, V
GS
=-4.5V,
I
D
=-2.8A
V
GS
=0V, V
DS
=-15V,
f=1.0MHz
V
GS
=0V, I
D
=-250μA
V
DS
=-20V, V
GS
=0V
V
GS
=±8V, V
DS
=0V
-20
-1
±100
V
μA
nA
On Characteristics
R
DS(ON)
V
GS(TH)
g
fs
V
GS
=-4.5V, I
D
=-2.8A
V
GS
=-2.5V, I
D
=-2A
V
DS
= V
GS
, I
D
=-250μA
V
DS
=-10V, I
D
=-2.7A
-0.4
90
110
-0.6
7.0
110
150
-1
mΩ
V
S
Dynamic Characteristics
Ciss
Coss
Crss
480
46
10
pF
Switching Characteristics
Q
g(TOT)
Q
g(TH)
Qgs
Qgd
td(on)
tr
td(off)
tf
7.2
2.2
2.2
1.2
38
25
43
5
ns
nC
Drain-Source Diode Characteristics and Maximum Ratings
V
SD
V
GS
=0V, I
S
=-1A
-0.7
-1.4
V
________________________________________________________________________
http://www.union-ic.com Rev.02 Jan.2010
2/5
UM8515
TYPICAL CHARACTERISTICS
(T
J
=25℃, UNLESS OTHERWISE NOTED)
5.0
4.5
4.0
Figure1. Typical Output Characteristics
V
GS
=4.5V
5.0
4.5
4.0
Figure2. Transfer Characterristics
VDS=5.0V
-I
D
,Drain Current(A)
-I
D
,Drain Current(A)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.5
1.0
V
GS
=2.5V
V
GS
=2.0V
V
GS
=1.5V
V
GS
=1.8V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.50
1.5
2.0
2.5
3.0
0.75
1.00
1.25
1.50
1.75
2.00
-V
DS
,Drain to Source Voltage(V)
-V
GS
,Gate to Source Voltage(V)
500
Figure3. On-Resistance vs. Gate Voltage
R
DSON
,On State Resistance(m
Ω
)
ID=1A
150
Figure4. On-Resistance vs. Drain Current
R
DSON
,On State Resistance(m
Ω
)
450
400
350
300
250
200
150
100
50
125
VGS=-2.5V
100
VGS=-4.5V
75
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
50
1.5
2.0
2.5
3.0
3.5
4.0
-V
GS
,Gate to Source Voltage(V)
-I
D
,Drain Current(A)
100
Figure5. R
DSON
vs. Temperature
-VGS(
TH
),Threshold Voltage(V)
1.000
0.875
0.750
0.625
0.500
0.375
0.250
0.125
Figure 6. V
TH
vs. Temperature
I
D
=-250uA
R
DSON
,On Resistance(m
Ω
)
90
80
70
60
VGS=4.5V,ID=-2.8A
50
-50
-25
0
25
50
75
0
100
125
0.000
-50
-25
0
25
50
75
0
100
125
T
J
,Junction Temperature( C)
T
J
,Junction Temperature( C)
________________________________________________________________________
http://www.union-ic.com Rev.02 Jan.2010
3/5
UM8515
Package Information
UM8515 SOT23-6
Outline Drawing
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
DIMENSIONS
MILLIMETERS
Min
Max
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
1.500
1.700
2.650
2.950
0.950REF
1.800
2.000
0.600REF
0.300
0.600
0°
8°
INCHES
Min
Max
0.041 0.049
0.000 0.004
0.041 0.045
0.012 0.020
0.004 0.008
0.111 0.119
0.059 0.067
0.104 0.116
0.037REF
0.071 0.079
0.023REF
0.012 0.024
0°
8°
Land Pattern
NOTES:
1. Compound dimension: 2.92×1.60；
2. Unit: mm;
3. General tolerance ±0.05mm unless otherwise
specified;
4. The layout is just for reference.
Tape and Reel Orientation
________________________________________________________________________
http://www.union-ic.com Rev.02 Jan.2010
4/5
UM8515
IMPORTANT NOTICE
The information in this document has been carefully reviewed and is believed to be
accurate. Nonetheless, this document is subject to change without notice. Union assumes
no responsibility for any inaccuracies that may be contained in this document, and makes
no commitment to update or to keep current the contained information, or to notify a
person or organization of any update. Union reserves the right to make changes, at any
time, in order to improve reliability, function or design and to attempt to supply the best
product possible.
Union Semiconductor, Inc
Add: 7F, No. 5, Bibo Road, Shanghai 201203
Tel: 021-51097928
Fax: 021-51026018
Website: www.union-ic.com
________________________________________________________________________
http://www.union-ic.com Rev.02 Jan.2010
5/5
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
