UM5052DA
Single Line Bi-directional ESD Protection Diode Array
UM5052DA DFN2 0.6×0.3
General Description
The UM5052DA ESD protection diode is designed to replace multilayer varistors (MLVs) in
portable applications such as cell phones, notebook computers, and PDA’s. They offer desirable
electrical characteristics for board level protection, such as fast response time, lower operating
voltage, lower clamping voltage and no device degradation when compared to MLVs. The
UM5052DA ESD protection diode protects sensitive semiconductor components from damage or
upset due to electrostatic discharge (ESD) and other voltage induced transient events. The
UM5052DA is available in DFN2 0.6mm×0.3mm package with working voltage of 5 volt. It gives
designer the flexibility to protect one bidirectional line in applications where arrays are not
practical. Additionally, it may be “sprinkled” around the board in applications where board space
is at a premium. It may be used to meet the ESD immunity requirements of IEC 61000-4-2,
±30kV air, ±30kV contact discharge.
Applications
Cell Phone Handsets and Accessories
Personal Digital Assistants (PDA’s)
Notebooks, Desktops and Servers
Portable Instrumentation
Cordless Phones
Digital Cameras
Peripherals
MP3 Players
Features
Transient protection for data lines to
IEC 61000-4-2 (ESD) ±30kV (air), ±30kV
(contact)
Small package for use in portable electronics
Suitable replacement for MLV’s in ESD
protection applications
Protect one I/O or power line
Low clamping voltage
Stand off voltages: 5V
Low leakage current
Solid-state silicon-avalanche technology
Pin Configurations
Top View
UM5052DA
DFN2 0.6×0.3
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UM5052DA
Ordering Information
Part
Number
UM5052DA
Working
Voltage
5.0V
Packaging Type
DFN2 0.6×0.3mm
2
Channel
1
Marking
Code
F
Shipping Qty
8000pcs/7 Inch
Tape & Reel
Absolute Maximum Ratings
RATING
Peak Pulse Power (tp = 8/20μs)
Maximum Peak Pulse Current (t=8/20μs)
Lead Soldering Temperature
Operating Temperature
Storage Temperature
SYMBOL
P
PK
I
PP
T
L
T
J
T
STG
VALUE
60
5
260 (10 sec.)
-55 to +125
-55 to +150
UNITS
Watts
Amps
°C
°C
°C
Symbol Definition
PARAMETER
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
pp
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
t
Test Current
Forward Current
Forward Voltage @ I
F
Peak Power Dissipation
Max. Capacitance @ V
R
= 0V, f = 1MHz
SYMBOL
I
PP
V
C
V
RWM
I
R
V
BR
I
t
I
F
V
F
P
PK
C
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UM5052DA
Electrical Characteristics
(T=25°C, Device for 5.0V Reverse Stand-off Voltage)
PARAMETER
SYMBOL
CONDITIONS
Reverse Stand-Off
V
RWM
Voltage
Reverse Breakdown
V
BR
It = 1mA
Voltage
Reverse Leakage
I
R
V
RWM
= 5V, T=25°C
Current
Clamping Voltage
V
C
I
PP
= 5A, t
p
= 8/20μS
V
R
= 0V, f = 1MHz
Junction Capacitance
C
J
Junction Capacitance
C
J
V
R
= 2.5V, f = 1MHz
MIN
TYP
MAX
5
UNIT
V
V
μA
V
6.5
8.0
8.5
1
12
7
6
10
9
pF
pF
Applications Information
Device Connection Options
UM5052DA ESD protection diode is designed to protect one bidirectional data, I/O, or power
supply line from the damage caused by ESD and surge pluses. The device is bidirectional and can
be used on lines where the signal polarity is above ground and below ground.
Circuit Board Layout Recommendations for Suppression of ESD
Good circuit board layout is critical for the suppression of ESD induced transients. The following
guidelines are recommended:
1) Place the TVS near the input terminals or connectors to restrict transient coupling.
2) Minimize the path length between the TVS and the protected line.
3) Minimize all conductive loops including power and ground loops.
4) The ESD transient return path to ground should be kept as short as possible.
5) Never run critical signals near board edges.
6) Use ground planes whenever possible. For multilayer printed-circuit boards, use ground
vias.
7) Keep parallel signal paths to a minimum.
8) Avoid running protection conductors in parallel with unprotected conductor.
9) Minimize all printed-circuit board conductive loops including power and ground loops.
10) Avoid using shared transient return paths to a common ground point.
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UM5052DA
Package Information
UM5052DA DFN2 0.6×0.3
Outline Drawing
Symbol
A
B
C
D
E
F
G
DIMENSIONS
MILLIMETERS
Min
Typ
0.595
0.620
0.295
0.320
0.245
0.275
0.145
0.150
0.245
0.250
0.245
0.250
0.005
0.010
Max
0.645
0.345
0.305
0.155
0.255
0.255
0.015
Land Pattern
NOTES:
1. Compound dimension: 0.6×0.3;
2. Unit: mm;
3. General tolerance±0.025mm unless otherwise
specified;
4. The layout is just for reference.
Tape and Reel Orientation
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UM5052DA
IMPORTANT NOTICE
The information in this document has been carefully reviewed and is believed to be
accurate. Nonetheless, this document is subject to change without notice. Union assumes
no responsibility for any inaccuracies that may be contained in this document, and makes
no commitment to update or to keep current the contained information, or to notify a
person or organization of any update. Union reserves the right to make changes, at any
time, in order to improve reliability, function or design and to attempt to supply the best
product possible.
Union Semiconductor, Inc
Add: 2F, No. 3, Lane 647 Songtao Road, Shanghai 201203
Tel: 021-51093966
Fax: 021-51026018
Website: www.union-ic.com
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