UM3865P
Load Switch with Level-Shift
UM3865P SOT363
General Description
The UM3865P includes a p- and n-channel MOSFET in a single SOT363 package. The low
on-resistance p-channel MOSFET is tailored for use as a load switch. The n-channel, with an
external resistor, can be used as a level-shift to drive the p-channel load switch. The n-channel
MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5V. The
UM3865P operates on supply lines from 1.8V to 8V, and can drive loads up to 1A.
Applications
Battery Packs
Battery-powered Portable Equipment
Cellular and Cordless Telephones
Features
300 mΩ Low On-Resistance
1.8V to 8V Input
1.5V to 8V Logic Level Control
Low Profile, Small Footprint SOT363
Package
2000V ESD Protection On Input Switch
Adjustable Slew-Rate
Pin Configurations
Top View
M: Month Code
UM3865P
SOT363
Ordering Information
Part Number
UM3865P
Packaging Type
SOT363
Marking Code
U7A
Shipping Qty
3000pcs/7 Inch
Tape & Reel
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UM3865P
Typical Application Circuit
COMPONENTS
R1
Pull-Up Resistor
R2
Optional Slew-Rate Control
C1
Optional Slew-Rate Control
*Minimum R1 value should be at least 10×R2 to ensure Q1 turn-on.
Switching Variation
(R2@VIN=2.5V,R1=20kΩ)
50
Typical 20kΩ to 1MΩ*
Typical 0 to 50kΩ
Typical 1000pF
40
Time(μs)
30
20
td(on)
10
tr
td(off)
tf
0
0
2
4
R2(kΩ)
6
8
10
Note: For R2 switching variations with other VIN/R1 combinations See Typical Characteristics
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UM3865P
Absolute Maximum Ratings
Symbol
V
IN
V
ON/OFF
I
L
I
S
P
D
T
J
,T
STG
ESD
R
θJA
Parameter
Input Voltage
ON/OFF Voltage
Continuous Load Current
(1)(2)
Pulse Load Current
(2)(3)
Continuous Source Current (Source-Drain Diode)
Maximum Power Dissipation
Junction and Storage Temperature Range
ESD Rating, MIL-STD-883D HBM
Thermal Resistance, Junction-to-Ambient
Limit
8
8
±1
±5
-1.0
0.5
- 50 to +150
2000
250
Unit
V
A
W
℃
V
℃
/W
Electrical Characteristics (T
J
=25℃, Unless Otherwise Noted)
Symbol
Parameter
Test Condition
V
IN
=8V, V
ON/OFF
=0V
I
S
=-1 A
1.8
V
ON/OFF
=1.5V, V
IN
=4.5V,
I
D
=1.0A
V
ON/OFF
=1.5V,V
IN
=2.5V,
I
D
=1.0A
V
IN-OUT
≤0.2V,V
IN
=5V,
V
ON/OFF
=1.5V
V
IN-OUT
≤0.3V,V
IN
=3V,
V
ON/OFF
=1.5V
0.300
0.400
0.7
A
0.8
-0.73
Min
Typ
Max
1
-1
Unit
μA
V
OFF Characteristics
Reverse Leakage
I
FL
Current
Diode Forward
V
SD
Voltage
ON Characteristics
Input Voltage
V
IN
Range
R
DS(ON)
Static
Drain-to-Source
On-Resistance
On-State
(p-channel) Drain
Current
8
0.350
V
Ω
0.450
I
D(on)
Notes:
(1): Surface Mounted on FR4 Board
(2): V
IN
=8V,V
ON/OFF
=8V, T
A
=25℃
(3): Pulse test: Pulse Width
≤
300μs, duty cycle
≤
2%
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UM3865P
Typical Characteristics
(T
J
=25℃, Unless Otherwise Noted)
Switching Variation
(R2@VIN=4.5V,R1=20kΩ)
Switching Variation
(R2@VIN=2.5V,R1=20kΩ)
50
80
70
60
Time(μs)
50
40
30
20
10
0
0
2
40
Time(μs)
30
20
td(on)
10
tr
td(off)
tf
0
0
2
4
R2(kΩ)
6
8
10
td(on)
tr
td(off)
tf
4
R2(kΩ)
6
8
10
50
Switching Variation
(R2@VIN=1.8V,R1=20kΩ)
1100
1000
Switching Variation
(R2@VIN=4.5V,R1=300kΩ)
40
900
800
Time(μs)
Time(μs)
td(on)
30
700
600
500
400
300
200
100
0
0
2
4
R2(kΩ)
6
8
10
20
td(on)
tr
td(off)
tf
0
20
40
R2(kΩ)
60
80
100
10
tr
td(off)
tf
0
On-Resistance vs. Input Voltage
(VON/OFF=VIN,R1=20kΩ,R2=10Ω,Ci=10uF,Co=1uF)
1
0.9
0.8
0.7
RDS(on)(Ω)
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
4
VIN(V)
5
6
7
8
1#
3#
2#
0.800
0.700
0.600
RDS(on)(Ω)
0.500
0.400
0.300
0.200
0.100
0.000
0
On-Resistance vs.IL
(R1=20kΩ,R2=10Ω,Ci=10uF,Co=1uF)
VIN=8V
VIN=3.6V
0.1
0.2
0.3
0.4
VIN=5.5V
VIN=2.5V
0.5
IL(A)
0.6
0.7
VIN=4.5V
VIN=1.8V
0.8
0.9
1
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UM3865P
Package Information
UM3865P SOT363
Outline Drawing
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
DIMENSIONS
MILLIMETERS
INCHES
Min
Max
Min
Max
0.900
1.100
0.035
0.043
0.000
0.100
0.000
0.004
0.900
1.000
0.036
0.039
0.100
0.350
0.004
0.014
0.080
0.220
0.003
0.009
1.800
2.200
0.071
0.087
1.150
1.350
0.045
0.053
2.000
2.450
0.079
0.096
0.650REF
0.026REF
1.200
1.400
0.047
0.055
0.525REF
0.021REF
0.260
0.460
0.010
0.018
0°
8°
0°
8°
Land Pattern
NOTES:
1. Compound dimension: 2.10×1.25;
2. Unit: mm;
3.General tolerance ±0.05mm unless otherwise specified;
4. The layout is just for reference.
Tape and Reel Orientation
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