NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY
256MB: 32M x 64 / 512MB: 64M x 64 / 1GB: 128M x 64
Unbuffered DDR2 SDRAM DIMM
240pin Unbuffered DDR2 SDRAM MODULE
Based on 64Mx8 & 32Mx16 DDR2 SDRAM B Die
Features
• Performance:
Speed Sort
DIMM
Latency
*
PC2-4200
PC2-5300
PC2-6400
PC2-6400
-37B
4
266
3.75
533
-3C
5
333
3
667
-25D
6
400
2.5
800
-25C
5
400
2.5
800
Unit
MHz
ns
MHz
f
CK
Clock Frequency
t
CK
Clock Cycle
f
DQ
DQ Burst Frequency
• JEDEC Standard 240-pin Dual In-Line Memory Module
• 32Mx64 DDR2 Unbuffered DIMM based on 32Mx16 DDR2
SDRAM
(NT5TU32M16BG)
• 64Mx64 and 128Mx64 DDR2 Unbuffered DIMM based on
64Mx8 DDR2 SDRAM
(NT5TU64M8BE)
• Intended for 266MHz, 333MHz, and 400MHz applications
• Inputs and outputs are SSTL-18 compatible
• V
DD
= V
DDQ
= 1.8Volt ± 0.1
• SDRAMs have 4 internal banks for concurrent operation
• Differential clock inputs
• Data is read or written on both clock edges
• Bi-directional data strobe with one clock cycle preamble and
one-half clock post-amble
• Address and control signals are fully synchronous to positive
clock edge
• Programmable Operation:
- Device
Latency: 4, 5, 6
- Burst Type: Sequential or Interleave
- Burst Length: 4, 8
- Operation: Burst Read and Write
• Auto Refresh (CBR) and Self Refresh Modes
• Automatic and controlled precharge commands
• 13/10/1 Addressing (row/column/rank) – 256MB
• 14/10/1 Addressing (row/column/rank) – 512MB
• 14/10/2 Addressing (row/column/rank) – 1GB
• 7.8 µs Max. Average Periodic Refresh Interval
• Serial Presence Detect
• Gold contacts
• SDRAMs in 60 and 84 ball FBGA Package
• RoHS compliance
Description
NT256T64UH4B0FY, NT512T64U88B0BY, and NT1GT64U8HB0BY are 240-Pin Double Data Rate 2 (DDR2) Synchronous DRAM
Unbuffered Dual In-Line Memory Module (UDIMM), organized as one-rank 32Mx64 and 64Mx64 and two ranks 128Mx64 high-speed
memory array. NT256T64UH4B0FY use four 32Mx16 DDR2 SDRAMs. NT512T64U88B0BY use eight 64Mx8 DDR2 SDRAMs.
NT1GT64U8HB0BY use sixteen 64Mx8 DDR2 SDRAMs. These DIMMs are manufactured using raw cards developed for broad industry
use as reference designs. The use of these common design files minimizes electrical variation between suppliers. All NANYA DDR2
SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” long space-saving footprint.
The DIMM is intended for use in applications operating up to 233 MHz (333MHz and 400MHz) clock speeds and achieves high-speed
data transfer rates of up to 533MHz (667MHz and 800MHz). Prior to any access operation, the device
latency and burst / length /
operation type must be programmed into the DIMM by address inputs A0-A14 and I/O inputs BA0 and BA1 using the mode register set
cycle.
The DIMM uses serial presence-detect implemented via a serial 2,048-bit EEPROM using a standard IIC protocol. The first 128 bytes of
serial PD data are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.
REV 1.2
03/2007
1
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
© NANYA TECHNOLOGY CORP.
NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY
256MB: 32M x 64 / 512MB: 64M x 64 / 1GB: 128M x 64
Unbuffered DDR2 SDRAM DIMM
Ordering Information
Part Number
NT256T64UH4B0FY-37B
NT256T64UH4B0FY-3C
NT256T64UH4B0FY-25D
NT256T64UH4B0FY-25C
NT512T64U88B0BY-37B
NT512T64U88B0BY-3C
NT512T64U88B0BY-25D
NT512T64U88B0BY-25C
NT1GT64U8HB0BY-37B
NT1GT64U8HB0BY-3C
NT1GT64U8HB0BY-25D
NT1GT64U8HB0BY-25C
Speed
266MHz (3.75ns@ CL = 4)
333MHz (3.00ns@ CL = 5)
400MHz (2.50ns@ CL = 6)
400MHz (2.50ns@ CL = 5)
266MHz (3.75ns@ CL = 4)
333MHz (3.00ns@ CL = 5)
400MHz (2.50ns@ CL = 6)
400MHz (2.50ns@ CL = 5)
266MHz (3.75ns@ CL = 4)
333MHz (3.00ns@ CL = 5)
400MHz (2.50ns@ CL = 6)
400MHz (2.50ns@ CL = 5)
DDR2-533
DDR2-667
DDR2-800
DDR2-533
DDR2-667
DDR2-800
DDR2-533
DDR2-667
DDR2-800
PC2-4200
PC2-5300
PC2-6400
PC2-4200
PC2-5300
PC2-6400
PC2-4200
PC2-5300
PC2-6400
128Mx64
64Mx64
Gold
1.8V
32Mx64
Organization
Leads
Power
Note
Pin Description
CK0-CK2,
-
CKE0, CKE1
Differential Clock Inputs
Clock Enable
Row Address Strobe
Column Address Strobe
Write Enable
,
A0-A9, A11-A13
A10/AP
BA0, BA1
ODT0, ODT1
NC
Chip Selects
Address Inputs
Column Address Input/Auto-precharge
SDRAM Bank Address Inputs
Reset pin
Active termination control lines
No Connect
DQ0-DQ63
DQS0-DQS8
DM0-DM8
-
V
DD
V
REF
V
DDSPD
V
SS
SCL
SDA
SA0-2
Data input/output
Bidirectional data strobes
Input Data Mask/High Data Strobes
Differential data strobes
Power (1.8V)
Ref. Voltage for SSTL_18 inputs
Serial EEPROM positive power supply
Ground
Serial Presence Detect Clock Input
Serial Presence Detect Data input/output
Serial Presence Detect Address Inputs
REV 1.2
03/2007
2
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
© NANYA TECHNOLOGY CORP.
NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY
256MB: 32M x 64 / 512MB: 64M x 64 / 1GB: 128M x 64
Unbuffered DDR2 SDRAM DIMM
Pinout
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
DQS3
V
SS
DQ26
DQ27
V
SS
DQS2
V
SS
DQ18
DQ19
V
SS
DQ24
DQ25
V
SS
DQS1
V
SS
NC
NC
V
SS
DQ10
DQ11
V
SS
DQ16
DQ17
V
SS
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
ODT1
V
DDQ
V
SS
DQ32
DQ33
V
DDQ
DQS0
V
SS
DQ2
DQ3
V
SS
DQ8
DQ9
V
SS
Front
V
REF
V
SS
DQ0
DQ1
V
SS
Pin
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
KEY
V
SS
V
SS
V
DD
NC
V
DD
A10/AP
BA0
V
DDQ
Front
NC
NC
V
SS
NC
NC
V
SS
NC
NC
V
SS
V
DDQ
CKE0
V
DD
NC
NC
V
DDQ
A11
A7
V
DD
A5
A4
V
DDQ
A2
V
DD
Pin
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
DQS7
V
SS
DQ58
DQ59
V
SS
SDA
SCL
DQS6
V
SS
DQ50
DQ51
V
SS
DQ56
DQ57
V
SS
DQS5
V
SS
DQ42
DQ43
V
SS
DQ48
DQ49
V
SS
SA2
NC
V
SS
DQS4
V
SS
DQ34
DQ35
V
SS
DQ40
DQ41
V
SS
Front
V
SS
Pin
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
V
SS
DQ14
DQ15
V
SS
DQ20
DQ21
V
SS
DM2
NC
V
SS
DQ22
DQ23
V
SS
DQ28
DQ29
V
SS
DM3
NC
V
SS
DQ30
DQ31
V
SS
NC
185
186
187
188
189
190
191
192
193
194
195
196
197
198
199
200
201
V
DDQ
ODT0
A13
V
DD
V
SS
DQ36
DQ37
V
SS
V
DD
A0
V
DD
BA1
V
DDQ
Back
V
SS
DQ4
DQ5
V
SS
DM0
NC
V
SS
DQ6
DQ7
V
SS
DQ12
DQ13
V
SS
DM1
NC
V
SS
CK1
Pin
162
163
164
165
166
167
168
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
KEY
CK0
Back
NC
V
SS
NC
NC
V
SS
NC
NC
V
SS
V
DDQ
CKE1
V
DD
NC
NC
V
DDQ
A12
A9
V
DD
A8
A6
V
DDQ
A3
A1
V
DD
Pin
202
203
204
205
206
207
208
209
210
211
212
213
214
215
216
217
218
219
220
221
222
223
224
225
226
227
228
229
230
231
232
233
234
235
236
237
238
239
240
V
SS
DM6
NC
V
SS
DQ54
DQ55
V
SS
DQ60
DQ61
V
SS
DM7
NC
V
SS
DQ62
DQ63
V
SS
V
DDSPD
SA0
SA1
Back
DM4
NC
V
SS
DQ38
DQ39
V
SS
DQ44
DQ45
V
SS
DM5
NC
V
SS
DQ46
DQ47
V
SS
DQ52
DQ53
V
SS
CK2
REV 1.2
03/2007
3
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
© NANYA TECHNOLOGY CORP.
NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY
256MB: 32M x 64 / 512MB: 64M x 64 / 1GB: 128M x 64
Unbuffered DDR2 SDRAM DIMM
Input/Output Functional Description
Symbol
CK0, CK1, CK2
,
,
Type
(SSTL)
(SSTL)
(SSTL)
Polarity
Function
The positive line of the differential pair of system clock inputs which drives the input to
Positive
the on-DIMM PLL. All the DDR2 SDRAM address and control inputs are sampled on the
Edge
rising edge of their associated clocks.
Negative The negative line of the differential pair of system clock inputs which drives the input to
Edge the on-DIMM PLL.
Active
High
Active
Low
Active
Low
Activates the SDRAM CK signal when high and deactivates the CK signal when low. By
deactivating the clocks, CKE low initiates the Power Down mode, or the Self Refresh
mode.
Enables the associated SDRAM command decoder when low and disables the
command decoder when high. When the command decoder is disabled, new commands
are ignored but previous operations continue.
When sampled at the positive rising edge of the clock,
operation to be executed by the SDRAM.
Reference voltage for SSTL-18 inputs
Isolated power supply for the DDR SDRAM output buffers to provide improved noise
immunity
Active
High
-
On-Die Termination control signals
Selects which SDRAM bank is to be active.
During a Bank Activate command cycle, A0-A14 defines the row address (RA0-RA13)
when sampled at the rising clock edge.
During a Read or Write command cycle, A0-A9 defines the column address (CA0-CA9)
when sampled at the rising clock edge. In addition to the column address, AP is used to
invoke Autoprecharge operation at the end of the Burst Read or Write cycle. If AP is
high, autoprecharge is selected and BA0/BA1 define the bank to be precharged. If AP is
low, autoprecharge is disabled.
During a Precharge command cycle, AP is used in conjunction with BA0/BA1 to control
which bank(s) to precharge. If AP is high all 4 banks will be precharged regardless of the
state of BA0/BA1. If AP is low, then BA0/BA1 are used to define which bank to
pre-charge.
Data and Check Bit Input/Output pins.
Power and ground for the DDR SDRAM input buffers and core logic
Negative
and
Data strobe for input and output data
Positive
Edge
Active
High
-
-
-
Supply
The data write masks, associated with one data byte. In Write mode, DM operates as a
byte mask by allowing input data to be written if it is low but blocks the write operation if
it is high. In Read mode, DM lines have no effect.
Address inputs. Connected to either V
DD
or V
SS
on the system board to configure the
Serial Presence Detect EEPROM address.
This bi-directional pin is used to transfer data into or out of the SPD EEPROM. A resistor
must be connected from the SDA bus line to V
DD
to act as a pull-up.
This signal is used to clock data into and out of the SPD EEPROM. A resistor may be
connected from the SCL bus time to V
DD
to act as a pull-up.
Serial EEPROM positive power supply.
CKE0, CKE1
,
(SSTL)
,
V
REF
V
DDQ
,
(SSTL)
Supply
Supply
Input
(SSTL)
,
,
define the
ODT0, ODT1
BA0, BA1
A0 – A9
A10/AP
A11 – A13
(SSTL)
-
DQ0 – DQ63
V
DD,
V
SS
DQS0 – DQS8
–
(SSTL)
Supply
(SSTL)
Active
High
DM0 – DM8
SA0 – SA2
SDA
SCL
V
DDSPD
Input
REV 1.2
03/2007
4
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
© NANYA TECHNOLOGY CORP.
NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY
256MB: 32M x 64 / 512MB: 64M x 64 / 1GB: 128M x 64
Unbuffered DDR2 SDRAM DIMM
Functional Block Diagram
(256MB, 1 Rank, 32Mx16 DDR2 SDRAMs)
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REV 1.2
03/2007
5
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
© NANYA TECHNOLOGY CORP.
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