BSS138
50V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• R
DS(ON)
, V
GS
@10V,I
DS
@500mA=3Ω
• R
DS(ON)
, V
GS
@2.5V,I
DS
@100mA=6Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
0.103(2.60)
0.044(1.10)
0.035(0.90)
0.020(0.50)
0.013(0.35)
0.120(3.04)
0.110(2.80)
SOT-23
Unit
：
inch(mm)
0.006(0.15)MIN.
• R
DS(ON)
, V
GS
@4.5V,I
DS
@200mA=4Ω
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
0.008(0.20)
0.003(0.08)
MECHANICAL DATA
• Case: SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 138
• Apporx. Weight: 0.0003 ounces, 0.0084 grams
0.004(0.10)MAX.
Maximum Ratings and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA M E TE R
D r a i n- S o ur c e Vo lta g e
Ga te - S o ur c e Vo lta g e
C o nti nuo us D r a i n C ur r e nt
P uls e d D r a i n C ur r e nt
1)
S ym b o l
V
DS
V
GS
I
D
I
D M
P
D
T
J
,T
S TG
R
θJ
A
L i mi t
50
+20
300
2000
350
210
- 5 5 to + 1 5 0
357
Uni ts
V
V
mA
mA
mW
O
T
A
= 2 5
O
C
T
A
= 7 5
O
C
Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e
Ra ng e
M a xi m um P o we r D i s s i p a ti o n
Junction-to Ambient Thermal Resistance(PCB mounted)
2
C
O
C /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
October 26,2010-REV.00
PAGE . 1
0.086(2.20)
BSS138
ELECTRICALCHARACTERISTICS
P a r a m e te r
S ta ti c
D ra i n-S o urc e B re a k d o wn
Vo lta g e
G a te Thr e s ho ld Vo lta g e
D ra i n-S o urc e On-S ta te
Re s i s ta nc e
D ra i n-S o urc e On-S ta te
Re s i s ta nc e
D ra i n-S o urc e On-S ta te
Re s i s ta nc e
Ze r o Ga te Vo lta g e D ra i n
C ur re nt
Gate Body Leakage
Forward Transconductance
Dynamic
To ta l Ga te C ha r g e
Tur n- On Ti m e
Tur n- Off Ti m e
Inp ut C a p a c i ta nc e
O utp ut C a p a c i ta nc e
Re ve r s e Tra ns fe r
C a p a c i ta nc e
S o urc e - D r a i n D i o d e
D i o d e F o rwa r d Vo lta g e
C o nti nuo us D i o d e F o r wa r d
C ur re nt
P uls e D i o d e F o rwa r d
C ur re nt
V
SD
I
S
I
S M
I
S
=250mA , V
GS
=0V
-
-
-
-
-
0.82
-
-
1.2
300
2000
V
mA
mA
Q
g
t
on
t
o ff
C
i ss
C
oss
C
rss
V
D S
= 2 5 V , V
GS
=0 V
f=1 .0 M H
Z
V
D S
= 2 5 V, I
D
=2 5 0 m A
V
GS
=4.5V
V
DD
=30V , R
L
=100Ω
I
D
=300mA , V
GEN
=10V
R
G
=6Ω
-
-
-
-
-
-
-
-
-
-
-
-
1 .0
40
150
50
10
5
pF
nC
B V
DSS
V
GS ( th)
R
D S ( o n)
R
D S ( o n)
R
D S ( o n)
I
D S S
I
GS S
g
fS
V
GS
= 0 V , I
D
=1 0
μ
A
V
D S
=V
GS
, I
D
= 2 5 0
μ
A
V
GS
=2.5V , I
D
=100mA
V
GS
=4.5V , I
D
=200mA
V
GS
=10V , I
D
=500mA
V
DS
=50V , V
GS
=0V
V
GS
=+ 2 0 V , V
D S
=0 V
V
D S
= 1 0 V , I
D
=2 5 0 m A
50
0 .8
-
-
-
-
-
100
-
-
2 .8
1 .8
1.6
-
-
-
-
1 .5
6 .0
4 .0
3.0
1
+1 0
-
μ
A
μ
A
mS
Ω
V
V
S ym b o l
Te s t C o nd i ti o n
M i n.
Typ .
M a x.
Uni ts
ns
Switching
Test Circuit
V
IN
V
DD
R
L
V
OUT
Gate Charge
Test Circuit
V
GS
V
DD
R
L
R
G
1mA
R
G
October 26,2010-REV.00
PAGE . 2
BSS138
Typical Characteristics Curves (T
A
=25 C,unless otherwise noted)
O
I
D
-Drain-to-Source Current (A)
1.2
1.0
0.8
1
I
D
-Drain-to-Source Current (A)
V
GS
=10V~4.0V
V
DS
=10V
0.8
0.6
0.4
0.2
0
3.0V
0.6
0.4
0.2
0
0
1
2
3
4
5
T
J
= 25 C
o
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Fig. 1-TYPICAL FORWARD CHARACTERISTIC
FIG.1- Output Characteristic
FIG.2- Transfer Characteristic
5
5
R
DS(ON)
- On Resistance (
W
)
R
DS(ON)
- On Resistance (
W
)
4
3
2
1
0
V
GS
=4.5V
V
GS
=10V
4
3
I
D
=200mA
2
1
0
I
D
=500mA
0
0.2
0.4
0.6
0.8
1
1.2
0
2
4
6
8
10
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
FIG.3- On Resistance vs Drain Current
1.8
1.6
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100 125 150
FIG.4- On Resistance vs Gate to Source Voltage
R
DS(ON)
-On-Resistance(Normalized)
V
GS
=10 V
I
D
=500mA
T
J
- Junction Temperature (
O
C)
FIG.5- On Resistance vs Junction Temperature
October 26,2010-REV.00
PAGE . 3
BSS138
10
I
D
=250m
A
V
GS
- Gate-to-Source Voltage(V)
1
V
GS
= 0V
I
S
- Source Current (A)
8
6
4
2
0
T
J
= 125
O
C
T
J
=25
O
C
0.1
T
J
=-55
O
C
0.01
0
0.2
0.4
0.6
0.8
1
1.2
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
- Source-to-Drain Voltage (V)
Q
g
- Gate Charge (nC)
Fig.6 - Gate Charge Waveform
V
th
- G-S Threshold Voltage(Normalized)
BV
DSS
- Breakdown Voltage(Normlized)
1.2
I
D
= 250
m
A
1.1
1.0
0.9
0.8
0.7
-50
Fig.7 Source-Drain Diode Forward Voltage
1.2
1.15
1.1
1.05
1
0.95
0.9
I
D
= 250
m
A
-25
0
25
50
75
100 125 150
O
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature ( C)
T
J
- Junction Temperature (
O
C)
Fig.8 - Threshold Voltage vs Temperature
Fig.9 - Breakdown Voltage vs Junction Temperature
October 26,2010-REV.00
PAGE . 4
BSS138
MOUNTING PAD LAYOUT
SOT-23
0.035 MIN.
(0.90) MIN.
Unit
：
inch(mm)
0.031 MIN.
(0.80) MIN.
0.043
(1.10)
0.037
(0.95)
0.043
(1.10)
0.106
(2.70)
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are
subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its produ cts for
any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any
license under its patent rights or rights of others.
October 26,2010-REV.00
0.078
(2.00)
PAGE . 5
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