PJ2301
20V P-Channel Enhancement Mode MOSFET
FEATURES
• R
DS(ON)
, V
GS
@-1.8V,I
D
@-1.5A=200mΩ
• R
DS(ON)
, V
GS
@-4.5V,I
D
@-2.2A=105mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for DC/DC converters
• Low gate charge
•
0.056(1.40)
0.047(1.20)
0.120(3.04)
0.110(2.80)
MECHANICAL DA
TA
0.079(2.00)
0.070(1.80)
0.008(0.20)
0.003(0.08)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.013(0.35)
0.044(1.10)
0.035(0.90)
Maximum Ratings and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA M E TE R
D r a i n- S o ur c e Vo lta g e
Ga te - S o ur c e Vo lta g e
S te a d y- S ta te
S te a d y- S ta te
t < 5s
T
A
= 2 5
O
C
T
A
= 7 0
O
C
T
A
= 2 5
O
C
S ym b o l
V
DS
V
GS
I
D
I
D M
T
A
= 2 5
O
C
T
A
= 7 0
O
C
P
D
R
θJ
A
R
θJ
L
T
J
,T
S TG
Li mit
-20
+8
-1 .7 5
- 1 .4
-2
10
700
450
175
65
- 5 5 to + 1 5 0
Uni ts
V
V
C o nti nuo us D ra i n C urr e nt (No te s 1 )
A
P uls e d D r a i n C urr e nt ( No te s 1 )
P o we r D i s s i p a ti o n ( No te s 2 )
Typ i c a l The r ma l Re s i s ta nc e (No te s 1 )
Typ i c a l The r ma l Re s i s ta nc e (No te s 1 )
Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra tur e Ra ng e
A
mW
O
C /W
C /W
O
O
C
NOTES:
1. Mounted on minimum pad layout.
2. Mounted on 48cm FR-4 PCB board.
2
September 29,2011-REV.01
PAGE . 1
PJ2301
ELECTRICAL CHARACTERISTICS
P a ra m e te r
S ta ti c
D ra i n- S o urc e B r e a k d o wn Vo lta g e
Ga te Thr e s ho ld Vo lta g e
D ra i n- S o urc e On- S ta te Re s i s ta nc e
D ra i n- S o urc e On- S ta te Re s i s ta nc e
D ra i n- S o urc e On- S ta te Re s i s ta nc e
Ze ro Ga te Vo lta g e D ra i n C urr e nt
Gate Body Leakage
Dynamic
Forward Transconductance
To ta l Ga te C ha rg e
Ga te - S o urc e C ha r g e
Ga te - D ra i n C ha r g e
Tur n-On Ti me
Tur n-Off Ti m e
Tur n-On Ri s e Ti m e
Tur n-Off F a ll Ti m e
Inp ut C a p a c i ta nc e
Outp ut C a p a c i ta nc e
Re ve rs e Tr a ns fe r C a p a c i ta nc e
Ga te Re s i s ta nc e
S o ur c e -D ra i n D i o d e
M a x. D i o d e F o rw a rd C ur re nt
D i o d e F o rwa r d Vo lta g e
B o d y-D i o d e Re ve rs e Re c o ve r y
Ti me
B o d y-D i o d e Re ve rs e Re c o ve r y
C ha rg e
I
s
V
SD
t
rr
I
S
= -2 .1 A , d i /d t= 1 0 0 A /μ s
Q
rr
-
12
-
nC
-
I
S
= -1 A , V
GS
= 0 V
-
-
-
-
- 0 .7 9
30
-2
-1
-
A
V
ns
g
FS
Q
g
Q
gs
Q
gd
t
on
t
off
t
r
t
f
C
i ss
C
oss
C
rss
R
g
V
D S
= 0 V, V
G S
= 0 V
f= 1 .0 MH
Z
V
D S
= -1 0 V, V
G S
= 0 V
f= 1 .0 MH
Z
V
DD
= -16V ,
I
D
= -2.2A, V
GS
= -4.5V
R
GEN
=2.5Ω
V
D S
= -1 0 V, I
D
= -2 . 2 A
V
GS
= -4.5V
V
D S
= -1 0 V, I
D
= -1 . 7 A
4
-
-
-
-
-
-
-
-
-
-
-
6
4
0 .5
1
8
35
15
25
200
90
40
12
-
-
-
-
-
-
ns
-
-
300
140
60
-
Ω
pF
nC
S
B V
DSS
V
G S (t h)
R
D S ( o n)
R
D S ( o n)
R
D S ( o n)
I
D S S
I
GS S
V
GS
= 0 V, I
D
= -2 5 0
μ
A
V
D S
= V
G S
, I
D
= - 2 5 0
μ
A
V
GS
= -4.5V, I
D
= -2.2A
V
GS
= -2.5V, I
D
= -1.7A
V
GS
= -1.8V, I
D
= -1.5A
V
DS
= -16V, V
GS
=0V
V
GS
= + 8 V, V
D S
= 0 V
-2 0
-0 .5
-
-
-
-
-
-
- 0 .7
90
120
170
-
-
-
- 0 .9
105
140
200
-1
+1 0 0
μ
A
nA
mΩ
V
V
S ym b o l
Te s t C o nd i ti o n
M i n.
Typ .
M a x.
Uni ts
September 29,2011-REV.01
PAGE . 2
PJ2301
CHARACTERISTIC CURVES
300
7
V
DS
= 0 V
V
GS
= 0 V
T
J
= 25°C
C, CAPACITANCE (pF)
250 C
ISS
6
-3.0V
-2.4V
-2.0V
-2.2V
T
J
=25℃
-1.8V
-1.6V
-1.4V
-1.2V
-I
D
- Drain Current(A)
20
200
150
100
C
RSS
50
0
10
5
−V
GS
0
−V
DS
5
10
15
C
OSS
5
4
3
2
1
0
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
-V
DS
-Drain-to-Source Voltage (V)
1
2
3
4
5
Fig.1 Capacitance Variation
5
V
DS
>-10V
Fig.2 On-Region Characteristics
0.2
0.175
0.15
0.125
0.1
0.075
0.05
0.5
1.5
2.5
3.5
V
GS
= -2.5V
V
GS
= -4.5V
T
J
= 25°C
4
3
2
1
0
0
0.5
1
1.5
2
T
J
=25℃
-V
GS
-Gate-to-Source Voltage (V)
Fig.3 Transfer Characteristics
0.5
R
DS
(on), Drain-to-Source
Resistance (Ω)
-I
D
- Drain Current(A)
-I
D
, Drain Current (A)
Fig.4 On-Resistance vs. Drain Current and Gate Voltage
R
DS
(on), Drain-to-Source
Resistance (mΩ)
130
120
110
100
90
25
50
75
100
125
150
I
D
=-2.1A
VGS=-4.5V
R
DS
(on), Drain-to-Source
Resistance (Ω)
0.4
0.3
0.2
0.1
0
1
2
3
4
5
6
I
D
= -2.1A
T
J
= 25°C
7
8
-V
GS
, Gate-to-Source Voltage (V)
Fig.5 On-Resistance vs. Gate-Source Voltage
T
J
, JUNCTION TEMPERATURE (℃)
Fig.6 On-Resistance Variation with Temperature
September 29,2011-REV.01
PAGE . 3
PJ2301
CHARACTERISTIC CURVES
−V
GS,
GATE−TO−SOURCE VOLTAGE (V)
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (V)
3
5
Q
T
4
−V
DS
−V
GS
15
-I
S
,Source Current (A)
V
GS
= 0V
T
J
= 25°C
2
12
3
Q
GS
2
Q
GD
9
6
1
1
I
D
= −2.1 A
D
−2.1 A
J
=
25°C
T
J
=
25°C
0
1
2
3
4
3
0
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Q
G
, TOTAL GATE CHARGE (nC)
-V
SD
, Source-to-Drain Voltage (V)
Fig.8 Diode Forward Voltage vs. Current
Fig.7 Gate-to-Source and Drain-to-Source vs. Total Charge
1000
V
DD
= −16 V
I
D
= −2.1 A
V
GS
= −4.5 V
100
t
d(OFF)
t
f
10
t
d(ON)
t
r
10000
-I
DSS
, Leakage (nA)
t, TIME (ns)
1000
T
J
= 150°C
100
T
J
= 100°C
T
J
= 75°C
10
2
4
6
8
10
12
14
16
18
20
1
1
10
100
R
G
, GATE RESISTANCE (W)
Fig.9 Resistive Switching Time Variation vs. Gate Resistance
-V
DS
, Drain-to-Source Voltage (V)
Fig.10 Drain-to-Source Leakage Current vs. Voltage
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
0.02
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
2. Per Unit Base = R
JL
= 62.5_C/W
(t)
3. T
J
– T
A
= P
DM
Z
JL
4. Surface Mounted
10
100
600
Fig.11 Thermal Response
September 29,2011-REV.01
PAGE . 4
PJ2301
MOUNTING PAD LAYOUT
SOT-23
Unit
：
inch(mm)
0.031 MIN.
(0.80) MIN.
0.037
(0.95)
0.043
(1.10)
0.106
(2.70)
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
September 29,2011-REV.01
PAGE . 5
嵌入式系统
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