SGM2025
Quad, Low Power, Low Dropout,
200mA, RF-Linear Regulators
GENERAL DESCRIPTION
The SGM2025 is a quad, low-power, low-dropout, CMOS
linear voltage regulator that operates from 3.3V to 5.5V
input and delivers up to 200mA continuous current at
each channel. An ultra low ground current (340µA at 0mA
output current) makes this part attractive for battery
operated power systems.
The SGM2025 also offers low dropout voltage (220mV at
200mA output) to prolong battery life in portable
electronics. Systems requiring a quiet voltage source,
such as RF applications, will benefit from the SGM2025
series’ ultra low output noise (30µV
RMS
) and high PSRR.
An external noise bypass capacitor connected to the
device’s BP pin can further reduce the noise level.
Other features include a 10nA logic-controlled shutdown
mode, output current limit and thermal shut-down
protection.
SGM2025 is available in Green TQFN-3×3-16L package.
It operates over an ambient temperature range of -40°C
to +85°C.
FEATURES
●
Low Output Noise: 30µV
RMS
TYP (10Hz to 100kHz)
●
Low Dropout Voltage:
220mV at 200mA Output Load Current
●
Low 340µA No-Load Supply Current
●
High PSRR: 68dB at 1kHz
●
Thermal-Overload Protection
●
Output Current Limit
●
10nA Logic Controlled Shutdown
●
-40℃ to +85℃ Operating Temperature Range
●
Available in Green TQFN-3×3-16L Package
APPLICATIONS
Cellular Telephones
Cordless Telephones
PHS Telephones
PCMCIA Cards
Modems
MP3 Player
Hand-Held Instruments
Palmtop Computers
Electronic Planners
Portable/Battery-Powered Equipment
SG Micro Limited
www.sg-micro.com
REV. A. 1
SGM2025
PACKAGE/ORDERING INFORMATION
MODEL
SGM2025
PIN-
PACKAGE
TQFN-3×3-16L
SPECIFIED
TEMPERATURE
RANGE
-40°C to +85°C
ORDERING
NUMBER
Quad, Low Power, Low Dropout,
200mA, RF-Linear Regulators
PACKAGE
MARKING
2025TQ
PACKAGE
OPTION
Tape and Reel, 3000
SGM2025YTQ16G/TR
PIN CONFIGURATION
(TOP VIEW)
SGM2025YTQ16G
V
OUT3
16
V
IN3
V
OUT4
V
BAT4
V
OUT1
1
2
3
4
5
V
BAT1
6
V
BAT2
7
8
EN3
15
EN4
14
BP
13
12
11
10
9
GND
GND
EN1
EN2
ABSOLUTE MAXIMUM RATINGS
IN to GND .................................................................-0.3V to 6V
Output Short-Circuit Duration ..........................................Infinite
EN to GND................................................................-0.3V to V
IN
OUT, BP to GND.......................................... -0.3V to (V
IN
+0.3V)
Operating Temperature Range........................... -40°C to +85°C
Junction Temperature........................................................150°C
Storage Temperature........................................-65°C to +150°C
Lead Temperature (soldering, 10s)................................... 260°C
ESD Susceptibility
HBM................................................................................. 4000V
MM..................................................................................... 400V
NOTE:
Stresses beyond those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only, and functional operation of the device at
these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
GND
V
OUT2
GND
TQFN-3×3-16L
CAUTION
This integrated circuit can be damaged by ESD if you don’t pay
attention to ESD protection. SGMICRO recommends that all
integrated circuits be handled with appropriate precautions.
Failure to observe proper handling and installation procedures
can cause damage. ESD damage can range from subtle
performance degradation to complete device failure. Precision
integrated circuits may be more susceptible to damage because
very small parametric changes could cause the device not to
meet its published specifications.
SGMICRO reserves the right to make any change in circuit
design, specification or other related things if necessary without
notice at any time. Please contact SGMICRO sales office to get
the last datasheet.
SG Micro Limited
www.sg-micro.com
2
SGM2025
Quad, Low Power, Low Dropout,
200mA, RF-Linear Regulators
FUNCTION DIAGRAM
Bandgap
BP
0.01µF
V
IN3
1µF
EN3
LDO3
2.8V
V
OUT3
1µF
2.8V/200mA
V
BAT4
1µF
EN4
LDO4
2.8V
V
OUT4
1µF
2.8V/200mA
V
BAT1
1µF
EN1
LDO1
2.8V
V
OUT1
1µF
2.8V/200mA
EN2
V
BAT2
1µF
LDO2
2.8V
V
OUT2
1µF
2.8V/200mA
SG Micro Limited
www.sg-micro.com
3
SGM2025
Quad, Low Power, Low Dropout,
200mA, RF-Linear Regulators
PIN DESCRIPTION
PIN
1
5,6,3
8,11,12
10,9,15,14
13
4
7
16
2
NAME
V
IN3
V
BAT1,2,4
GND
EN1,2,3,4
BP
V
OUT1
V
OUT2
V
OUT3
V
OUT4
FUNCTION
Regulator Input. Bypass with a 1µF capacitor to GND. In application V
IN3
is always powered
by V
BUS
of USB interface.
Regulator Input. Bypass with a 1µF capacitor to GND. Connected together externally. In
application V
BAT1,2,4
are always connected to battery directly.
Ground. All GND pins must be connected together externally.
Shutdown Input. A logic low reduces the supply current to 10nA. Connect to V
IN3
or V
BAT1, 2, 4
for normal operation.
Reference-Noise Bypass (fixed voltage version only). Bypass with a low-leakage 0.01µF
ceramic capacitor for reduced noise at the output.
LDO-1 Regulator Output. Sources up to 200mA. Bypass with a 1µF Capacitor to GND for
V
OUT1
= 2.8V/200mA.
LDO-2 Regulator Output. Sources up to 200mA. Bypass with a 1µF Capacitor to GND for
V
OUT2
= 2.8V/200mA.
LDO-3 Regulator Output. Sources up to 200mA. Bypass with a 1µF Capacitor to GND for
V
OUT3
= 2.8V/200mA.
LDO-4 Regulator Output. Sources up to 200mA. Bypass with a 1µF Capacitor to GND for
V
OUT4
= 2.8V/200mA.
SG Micro Limited
www.sg-micro.com
4
SGM2025
Quad, Low Power, Low Dropout,
200mA, RF-Linear Regulators
ELECTRICAL CHARACTERISTICS
(V
IN
= V
OUT (NOMINAL)
+ 0.5V, typical values are at T
A
= +25°C, unless otherwise noted.)
PARAMETER
Input Voltage
Output Voltage Accuracy
Maximum Output Current
Current Limit
Ground Pin Current
Dropout Voltage
Line Regulation
Load Regulation
Output Voltage Noise
Power Supply Rejection Rate
SHUTDOWN
EN Input Threshold
EN Input Bias Current
Shutdown Supply Current
Shutdown Exit Delay
(2)
(1)
SYMBOL
V
IN
CONDITIONS
I
OUT
= 0.1mA, T
A
= +25°C
MIN
3.3
-2
200
210
TYP
MAX
5.5
+2
UNITS
V
%
mA
mA
I
LIM
I
Q
No load, EN = 2V
I
OUT
= 1mA
I
OUT
= 200mA
∆V
LNR
∆V
LDR
e
n
PSRR
V
IN
= 3.3V to 5.5V, I
OUT
= 1mA
I
OUT
= 0.1mA to 200mA, C
OUT
= 1µF
f = 10Hz to 100kHz, C
BP
= 0.1µF,
C
OUT
= 10µF
C
BP
= 0.1µF, I
LOAD
= 50mA,
C
OUT
= 1µF
f = 217Hz
f = 1kHz
400
340
2
220
0.02
0.002
30
74
68
300
0.05
0.005
560
µA
mV
%/V
%/mA
µV
RMS
dB
dB
V
IH
V
IL
I
B(SHDN)
I
Q(SHDN)
V
IN
= 3.3V to 5.5V
EN = 0V and EN = 5.5V
EN = 0.4V
C
BP
= 0.01µF, C
OUT
= 1µF, No load
1.5
0.4
0.01
0.01
0.01
0.01
30
1
1
V
µA
µA
µs
℃
℃
THERMAL PROTECTION
Thermal Shutdown
Temperature
Thermal Shutdown
Hysteresis
T
SHDN
∆T
SHDN
160
24
NOTES:
1. The dropout voltage is defined as V
IN
- V
OUT
, when V
OUT
is 100mV below the value of V
OUT
for V
IN
= V
OUT
+ 0.5V.
2. Time needed for V
OUT
to reach 95% of final value.
SG Micro Limited
www.sg-micro.com
5
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