SSF6092G1
60V N-Channel MOSFET
Main Product Characteristics
V
DSS
R
DS
(on)
I
D
60V
70mΩ(typ)
2.7A
SOT-23
Marking and Pin
Assignment
Schematic Diagram
Features and Benefits
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
I
D
@ TC = 25°C
I
DM
P
D
@TC = 25°C
V
DS
V
GS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
②
Power Dissipation
③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
2.7
①
10.8
1.25
0.01
60
± 20
-55 to + 150
W
W/°C
V
V
°C
Units
A
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Page 1 of 6
Rev.1.0
SSF6092G1
60V N-Channel MOSFET
Thermal Resistance
Symbol
R
θJA
Characteristics
Junction-to-Ambient (t ≤ 10s)
④
Junction-to-Ambient (PCB mounted, steady-state)
④
Typ.
—
—
Max.
99
100
Units
℃/W
Electrical Characteristics
@T
A
=25℃
Symbol
V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Gate-to-Source reverse leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Min.
60
—
1
—
—
unless otherwise specified
Typ.
—
70
—
—
—
—
12
3.5
3.7
9.2
16.7
35.4
8.6
641
48
38
Max.
—
92
2.5
1
100
—
—
—
—
—
—
—
—
—
—
—
pF
nS
nC
Units
V
mΩ
V
μA
nA
Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
=10V,I
D
= 2.7A
V
DS
= V
GS
, I
D
= 250μA
V
DS
=60V, V
GS
=0V
V
GS
=20V
V
GS
= -20V
I
D
= 4A
V
DD
=40V
V
GS
= 10V
V
GS
=10V,
V
DS
=25V,
R
GEN
=50Ω
I
D
=1.2A
V
GS
= 0V
V
DS
= 25V
ƒ =1MHz
-100
—
—
—
—
—
—
—
—
—
—
Source-Drain Ratings and Characteristics
Symbol
I
S
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Min.
—
Typ.
—
Max.
2.7
①
Units
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
S
=2.7A, V
GS
=0V,T
J
= 25°C
I
SM
V
SD
—
—
—
0.85
10.8
1.3
A
V
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Page 2 of 6
Rev.1.0
SSF6092G1
60V N-Channel MOSFET
Test Circuits and Waveforms:
Switch Waveforms:
Notes:
①Calculated
continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
②Repetitive
rating; pulse width limited by max. junction temperature.
③The
power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The
value of
R
θJA
is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These
curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of T
J(MAX)
=175°C.
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Page 3 of 6
Rev.1.0
SSF6092G1
60V N-Channel MOSFET
Thermal Characteristics：
Fig 1. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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Page 4 of 6
Rev.1.0
SSF6092G1
60V N-Channel MOSFET
Mechanical Data
SOT-23 PACKAGE OUTLINE DIMENSION
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimension In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.95TYP
1.800
2.000
0.55REF
0.300
0.500
0
0
8
0
Dimension In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037TYP
0.071
0.079
0.022REF
0.012
0.020
0
0
8
0
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Page 5 of 6
Rev.1.0
NXP MCU
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