ROHS Product
BLM2304
N-Channel
Enhancement Mode Power MOSFET
Description
The BLM2304 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge .This device is suitable
for use as a load switch or in PWM applications.
D
G
General Features
●
V
DS
= 30V,I
D
= 3.6A
R
DS(ON)
< 73mΩ @ V
GS
=4.5V
R
DS(ON)
<58mΩ @ V
GS
=10V
●
High power and current handing capability
●
Lead free product is acquired
●
Surface mount package
S
Schematic diagram
Marking and pin assignment
Application
●
Battery protection
●
Load switch
●
Power management
SOT-23 top view
Package Marking and Ordering Information
Device Marking
2304
Device
BLM2304
Device Package
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
Limit
30
±20
3.6
15
1.7
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
73.5
℃
/W
Electrical Characteristics (T
A
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
V
DS
=30V,V
GS
=0V
30
-
33
-
-
1
V
μA
Symbol
Condition
Min
Typ
Max
Unit
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ROHS Product
BLM2304
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
V
SD
I
S
V
GS
=0V,I
S
=2.7A
-
-
0.8
-
1.2
1.6
V
A
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=15V,I
D
=3.6A,
V
GS
=10V
V
DD
=10V,I
D
=3.6A
V
GS
=4.5V,R
GEN
=6Ω
-
-
-
-
-
-
-
10
50
10
20
4.0
0.75
0.65
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
C
lss
C
oss
C
rss
V
DS
=15V,V
GS
=0V,
F=1.0MHz
-
-
-
230
40
17
-
-
-
PF
PF
PF
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=250μA
V
GS
=4.5V, I
D
=3.1A
V
GS
=10V, I
D
=3.6A
V
DS
=5V,I
D
=3.6A
1.2
-
-
-
1.5
58
40
11
2.2
73
58
-
V
mΩ
mΩ
S
I
GSS
V
GS
=±20V,V
DS
=0V
-
-
±100
nA
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
Page2
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V1.0
ROHS Product
BLM2304
Typical Electrical and Thermal Characteristics
Vdd
Rl
D
G
S
Vout
t
d(on)
t
on
t
r
90%
t
d(off)
t
off
t
f
90%
Vin
Vgs
Rgen
V
OUT
10%
INVERTED
10%
90%
V
IN
10%
50%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction Temperature(℃)
I
D
- Drain Current (A）
P
D
Power(W)
T
J
-Junction Temperature(℃)
Figure 3 Power Dissipation
Figure 4 Drain Current
Rdson On-Resistance(Ω)
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
I
D
- Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
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V1.0
ROHS Product
BLM2304
Normalized On-Resistance
I
D
- Drain Current (A)
Vgs Gate-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Rdson On-Resistance(Ω)
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
C Capacitance (pF)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
I
s
- Reverse Drain Current (A)
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
Page4
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V1.0
ROHS Product
BLM2304
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 13
r(t),Normalized Effective
Transient Thermal Impedance
Safe Operation Area
Square Wave
Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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