PPJS6601
20V Complementary Enhancement Mode MOSFET
Voltage
Features
20 / -20V
Current
4.1 /-3.1A
SOT-23 6L
Unit: inch(mm)
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
Lead free in compliance with EU RoHS 2011/65/EU
directive
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 6L Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0005 ounces, 0.014 grams
Marking: SC1
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
(Note 4)
o
SYMBOL
V
DS
V
GS
I
D
I
DM
T
a
=25
o
C
Derate above 25
o
C
P
D
T
J
,T
STG
R
θJA
N-Ch LIMIT
P-Ch LIMIT
UNITS
V
V
A
A
W
mW/
o
C
o
20
+12
4.1
16.4
1.25
10
-55~150
100
-20
+12
-3.1
-12.4
Operating Junction and Storage Temperature Range
Typical Thermal Resistance
-
Junction to Ambient
(Note 3)
C
o
C/W
September 18,2015-REV.00
Page 1
PPJS6601
N-Channel Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
(Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
I
S
V
SD
---
I
S
=1.0A, V
GS
=0V
-
-
-
0.75
1.5
1.2
A
V
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
tr
td
(off)
tf
V
DS
=10V, I
D
=4.1A,
V
GS
=4.5V
(Note 1,2)
V
DS
=10V, V
GS
=0V,
f=1.0MHZ
V
DD
=10V, I
D
=4.1A,
V
GS
=4.5V,
R
G
=6Ω
(Note 1,2)
-
-
-
-
-
-
-
-
-
-
4.6
0.8
1
350
40
29
4
47
18
10
-
-
-
-
-
-
-
-
-
-
ns
pF
nC
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
GS
=4.5V, I
D
=4.1A
V
GS
=2.5V, I
D
=2.8A
V
GS
=1.8V, I
D
=1.5A
V
DS
=20V, V
GS
=0V
V
GS
=+12V, V
DS
=0V
20
0.4
-
-
-
-
-
-
0.66
41
50
66
-
-
-
1.2
56
68
95
1
+100
uA
nA
mΩ
V
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
o
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4. The maximum current rating is package limited.
5. Guaranteed by design, not subject to production testing
September 18,2015-REV.00
Page 2
PPJS6601
P-Channel Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
(Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
I
S
V
SD
---
I
S
=-1.0A, V
GS
=0V
-
-
-
-0.8
-1.5
-1.2
A
V
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
tr
td
(off)
tf
V
DS
=-10V, I
D
=-3.1A,
V
GS
=-4.5V
(Note 1,2)
V
DS
=-10V, V
GS
=0V,
f=1.0MHZ
V
DD
=-10V, I
D
=-3.1A,
V
GS
=-4.5V,
R
G
=6Ω
(Note 1,2)
-
-
-
-
-
-
-
-
-
-
5.4
0.7
1.3
416
43
32
4
27
78
45
-
-
-
-
-
-
-
-
-
-
ns
pF
nC
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
V
GS
=0V, I
D
=-250uA
V
DS
=V
GS
, I
D
=-250uA
V
GS
=-4.5V, I
D
=-3.1A
V
GS
=-2.5V, I
D
=-2.0A
V
GS
=-1.8V, I
D
=-1.1A
V
DS
=-20V, V
GS
=0V
V
GS
=+12V, V
DS
=0V
-20
-0.4
-
-
-
-
-
-
-0.71
84
104
134
-
-
-
-1.2
100
135
190
-1
+100
uA
nA
mΩ
V
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
o
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4. The maximum current rating is package limited.
5. Guaranteed by design, not subject to production testing.
September 18,2015-REV.00
Page 3
PPJS6601
N-Channel TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Diode Characteristics
September 18,2015-REV.00
Page 4
PPJS6601
N-Channel TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Threshold Voltage Variation with Temperature.
Fig.9 Capacitance vs. Drain-Source Voltage.
September 18,2015-REV.00
Page 5
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