PJA94N03
30V N-CHANNEL ENHANCEMENT MODE MOSFET
VOLTAGE
FEATURES
• R
DS(ON)
, V
GS
@10V,I
D
@3.1A< 57 mΩ
• R
DS(ON)
, V
GS
@4.5V,I
D
@2.8A< 94 mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for DC/DC Converters
• Low Gate Charge
• Lead free in compliance with EU RoHS 2011/65/EU directive
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.056(1.40)
0.047(1.20)
0.120(3.04)
0.110(2.80)
30 Volt
CURRENT
2.9 Ampere
0.006(0.15)MIN.
0.008(0.20)
0.003(0.08)
0.044(1.10)
0.035(0.90)
0.020(0.50)
0.013(0.35)
0.079(2.00)
0.070(1.80)
MECHANICAL DATA
• Case : SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Apporx. Weight : 0.0003 ounces, 0.0084grams
• Marking : 94
0.004(0.10)
0.000(0.00)
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (T
A
=25
O
C unless otherwise noted )
PAR AM E T E R
D r a i n- S o urc e Vo lta g e
Ga te - S o ur c e Vo lta g e
C o nti nuo us D ra i n C urre nt
P uls e d D ra i n C urr e nt
P o we r D i s s i p a ti o n (No te s 1 )
Typ i c a l The r ma l Re s i s ta nc e (No te s 1 )
Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e
S te a d y-S ta te
T
A
=2 5
O
C
S te a d y-S ta te
T
A
=2 5
O
C
S YM B OL
V
DS
V
GS
I
D
I
D M
P
D
R
θJ
A
T
J
,T
S TG
L IMIT
30
+2 0
2 .9
16
0 .7
176
-5 5 to + 1 5 0
U N IT S
V
V
A
A
W
O
C /W
O
C
NOTES : 1. Mounted on 7.5cm FR-4 PCB .
2
March 3,2015-REV.01
PAGE . 1
PJA94N03
ELECTRICAL CHARACTERISTICS (T
A
=25
O
C unless otherwise noted )
PAR AME T E R
S ta ti c
D ra i n-S o urc e B re a kd o wn Vo lta g e
Ga te Thre sho ld Vo lta g e
B V
DSS
V
GS (th)
V
GS
=0 V, I
D
=2 5 0
μA
V
D S
=V
GS
, I
D
= 2 5 0μA
V
GS
= 10V, I
D
= 3.1A
D ra i n-S o urc e On-S ta te Re s i s ta nc e
R
D S (on)
V
GS
= 4.5V, I
D
= 2.8A
Ze ro Ga te Vo lta g e D ra i n C urre nt
Gate -Source Leakage Current
D i o d e F o rwa rd Vo lta g e
Dynamic
Tota l Ga te C ha rg e
Ga te -S o urc e C ha rg e
Ga te -D ra i n C ha rg e
Turn-On D e la y Ti me
Turn-Off D e la y Ti me
Turn-On Ri se Ti me
Turn-Off F a ll Ti me
Inp ut C a p a ci ta nce
Outp ut C a p a ci ta nce
Re ve rse Transfe r C a p a ci ta nce
Q
g
Q
gs
Q
gd
td
on
td
off
t
r
t
f
C
i ss
C
os s
C
rss
V
D S
= 1 5 V, V
GS
=0 V
f=1 .0 MH
Z
V
D S
= 1 5 V, I
D
= 3 .1 A
V
GS
= 10V
-
-
-
-
-
V
DS
= 15V , V
GS
= 10V,
R
G
= 6Ω
,
R
L
= 5Ω
-
-
-
-
-
1 2 .6 3
2 .2 5
2 .6 2
11.6
3 5 .2
1 9 .6
8.2
607
66
59
-
-
-
-
-
ns
-
-
-
-
-
pF
nC
I
D S S
I
GS S
V
SD
V
DS
= 30V, V
GS
=0V
V
GS
= +2 0 V, V
D S
=0 V
I
S
= 1 .2 5 A , V
GS
=0 V
-
-
-
-
40
-
-
0 .9
94
0.5
+1 0 0
1 .2
μA
nA
V
30
1 .0
-
-
2 .0
27
-
3 .0
57
mΩ
V
V
S YMB OL
T E S T C ON D IT ION
MIN .
T YP.
MAX .
U N IT S
March 3,2015-REV.01
PAGE . 2
PJA94N03
RATING
AND CHARACTERISTIC CURVES
I
DS
, Drain-Source Current(A)
1000
16
V
GS
=10V
12
V
GS
=4V
8
V
GS
=5V
C, Capacitance(pF)
900
800
700
600
500
400
300
200
100
0
0
5
10
15
V
GS
=0V
f=1MH
Z
Ciss(pf)
Coss(pf)
Crss(pf)
4
V
GS
=1V,3V
0
0
1
2
3
4
5
20
25
V
DS
, Drain-Source Voltage(V)
Fig.1 Capacitance Variation
V
DS
, Drain-Source Voltage(V)
Fig.2 Drain-Source Current VS Drain-Source Voltage
I
D
, Drain Current(A)
14
12
10
8
6
4
2
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
T
A
=25℃
T
A
=125℃
R
DS
(on), On Resistance(mΩ)
16
100
90
80
70
60
50
40
30
0
2
4
6
8
10
12
14
16
18
20
VGS=4.5V
VGS=10V
V
GS
, Gate-Source Voltage(V)
Fig.3 Drain Current VS Gate-Source Voltage
I
D
, Drain Current(A)
Fig.4 On-Resistance VS Drain Current
500
R
DS
(on), On-Resistance(mΩ)
45
400
300
200
100
0
0
2
4
6
8
10
R
DS
(on)- On-Resistance(mΩ)
I
D
=3.1A
40
35
30
25
20
25
V
GS
=10V
I
D
=3.1A
50
75
100
125
150
V
GS
, Gate-Source Voltage(V)
T
J
, Junction Temperature (℃)
Fig.6 On-Resistance VS Junction Temperature
Fig.5
sistsnce
vs.
On-Resistance VS Gate-Source voltge
Drain current
Fig.5 On-Resistsnce vs. Drain current
March 3,2015-REV.01
PAGE . 3
PJA94N03
RATING
AND CHARACTERISTIC CURVES
V
GS
(
th
), Gate Threshold Voltage(V)
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
25
50
75
100
125
150
I
DS
=-250uA
10.0
I
S
, Source Current(A
)
8.0
6.0
T
J
=150℃
T
J
=125℃
4.0
2.0
0.0
0.2
0.4
0.6
0.8
1
1.2
T
J
=75℃
T
J
=25℃
1.4
1.6
T
J
, Junction Temperature(℃)
V
SD
, Source-Drain Voltage(V)
Fig.8 Body diode forward voltage
Fig.7 Gate Threshoid Voltage VS Junction Temperature
s
March 3,2015-REV.01
PAGE .
4
PJA94N03
MOUNTING PAD LAYOUT
0.035 MIN.
(0.90) MIN.
0.031 MIN.
(0.80) MIN.
0.043
(1.10)
0.037
(0.95)
0.043
(1.10)
0.106
(2.70)
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
March 3,2015-REV.01
0.078
(2.00)
PAGE . 5
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