PPJA3440
40V N-Channel Enhancement Mode MOSFET
Voltage
Features
40 V
Current
4.3A
SOT-23
Unit: inch(mm)
R
DS(ON)
, V
GS
@10V, I
D
@4.3A<42mΩ
R
DS(ON)
, V
GS
@4.5V, I
D
@3.9A<51mΩ
Advanced Trench Process Technology
Specially Designed for switch Load, PWM applications,
and solid-state relays relay
Lead free in compliance with EU RoHS 2011/65/EU
directive
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: A40
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
(Note 4)
o
SYMBOL
V
DS
V
GS
I
D
I
DM
T
a
=25
o
C
Derate above 25
o
C
P
D
T
J
,T
STG
R
θJA
LIMIT
UNITS
V
V
A
A
W
mW/
o
C
o
40
+20
4.3
17.2
1.25
10
-55~150
100
o
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient
(Note 3)
C
C/W
June 5,2015-REV.01
Page 1
PPJA3440
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
(Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
V
SD
trr
Qrr
---
I
S
=1.0A, V
GS
=0V
V
GS
=0V, I
S
=3.5A
dI
F
/ dt=100A/us
-
-
-
-
-
0.78
10.2
5.5
1.0
1.2
-
-
A
V
ns
nC
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
tr
td
(off)
tf
V
DS
=20V, I
D
=4.3A,
V
GS
=4.5V
(Note 1,2)
V
DS
=20V, V
GS
=0V,
f=1.0MHZ
V
DD
=20V, I
D
=3.5A,
V
GS
=10V,
R
G
=1Ω
(Note 1,2)
o
SYMBOL
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
TEST CONDITION
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
=4.3A
V
GS
=4.5V, I
D
=3.9A
V
DS
=40V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
MIN.
40
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
1.5
35
44
0.01
+10
4.8
1.4
1.8
410
50
30
4
30
15
8
MAX.
-
2.5
42
51
1
+100
-
-
-
-
-
-
-
-
-
-
UNITS
V
V
mΩ
uA
nA
nC
pF
ns
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4. The maximum current rating is package limited.
5. Guaranteed by design, not subject to production testing.
June 5,2015-REV.01
Page 2
PPJA3440
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Diode Characteristics
June 5,2015-REV.01
Page 3
PPJA3440
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Threshold Voltage Variation with Temperature.
Fig.9 Capacitance vs. Drain-Source Voltage.
June 5,2015-REV.01
Page 4
PPJA3440
PART NO PACKING CODE VERSION
PART NO PACKING CODE
Package Type
SOT-23
SOT-23
Packing type
3K pcs / 7” reel
12K pcs / 13” reel
Marking
A40
A40
Version
Halogen free
Halogen free
PJA3440_R1_00001
PJA3440_R2_00001
MOUNTING PAD LAYOUT
June 5,2015-REV.01
Page 5
模拟电子
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