PPJT7807
20V P-Channel Enhancement Mode MOSFET
Voltage
Features
-20 V
Current
-500mA
SOT-363
Unit: inch(mm)
Low Voltage Drive (1.2V).
Advanced Trench Process Technology
Specially Designed for Load switch, PWM Application, etc.
ESD Protected
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-363 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0002 ounces, 0.006 grams
Marking: T07
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
o
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
(Note 4)
SYMBOL
V
DS
V
GS
I
D
I
DM
T
a
=25
o
C
Derate above 25
o
C
P
D
T
J
,T
STG
R
θJA
LIMIT
UNITS
V
V
mA
mA
mW
mW/
o
C
o
-20
+10
-500
-1000
350
2.8
-55~150
357
o
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient
(Note 3)
C
C/W
March 6,2015-REV.00
Page 1
PPJT7807
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BV
DSS
V
GS(th)
V
GS
=0V, I
D
=-250uA
V
DS
=V
GS
, I
D
=-250uA
V
GS
=-4.5V, I
D
=-500mA
V
GS
=-2.5V, I
D
=-200mA
Drain-Source On-State Resistance
R
DS(on)
V
GS
=-1.8V, I
D
=-100mA
V
GS
=-1.5V, I
D
=-50mA
V
GS
=-1.2V, I
D
=-10mA
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
(Note 5)
o
SYMBOL
TEST CONDITION
MIN.
-20
-0.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-0.59
0.85
0.99
1.16
1.33
1.5
-
+2
1.4
0.19
0.2
38
15
9
7.2
21
85
116
MAX.
-
-1.0
1.2
1.5
2.2
3.6
6.0
-1
+10
-
-
-
-
-
-
-
-
-
-
UNITS
V
V
Ω
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
tr
td
(off)
tf
V
DS
=-16V, V
GS
=0V
V
GS
=+8V, V
DS
=0V
uA
uA
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
V
DS
=-10V, I
D
=-500mA,
V
GS
=-4.5V
(Note 1,2)
V
DS
=-10V, V
GS
=0V,
f=1.0MHZ
V
DD
=-10V, I
D
=-500mA,
V
GS
=-4.5V,
R
G
=6Ω
(Note 1,2)
nC
pF
ns
I
S
V
SD
---
I
S
=-500mA, V
GS
=0V
-
-
-
-0.93
-500
-1.3
mA
V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4. The maximum current rating is package limited.
5. Guaranteed by design, not subject to production testing.
March 6,2015-REV.00
Page 2
PPJT7807
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Dlode Characterlslcs
March 6,2015-REV.00
Page 3
PPJT7807
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Threshold Voltage Variation with Temperature.
Fig.9 Capacitance vs. Drain-Source Voltage.
March 6,2015-REV.00
Page 4
PPJT7807
PART NO PACKING CODE VERSION
Part No Packing Code
PJT7807_R1_00001
PJT7807_R2_00001
Package Type
SOT-363
SOT-363
Packing type
3K pcs / 7” reel
10K pcs / 13” reel
Marking
T07
T07
Version
Halogen free
Halogen free
MOUNTING PAD LAYOUT
March 6,2015-REV.00
Page 5
国产芯片交流
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
