PPJS6414
20V N-Channel Enhancement Mode MOSFET
Voltage
Features
20 V
Current
6.6A
SOT-23 6L-1
Unit : inch(mm)
R
DS(ON)
, V
GS
@4.5V, I
D
@6.6A<36mΩ
R
DS(ON)
, V
GS
@2.5V, I
D
@4.1A<52mΩ
R
DS(ON)
, V
GS
@1.8V, I
D
@1.9A<92mΩ
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc..
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 6L-1 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0005 ounces, 0.014 grams
Marking: S14
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T
a
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
R
θJA
LIMIT
o
UNITS
V
V
A
A
W
mW/
o
C
o
20
+12
6.6
26.4
2
16
-55~150
62.5
o
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient
(Note 3)
C
C/W
December 31,2014-REV.02
Page 1
PPJS6414
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BV
DSS
V
GS(th)
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
GS
=4.5V, I
D
=6.6A
Drain-Source On-State Resistance
R
DS(on)
V
GS
=2.5V, I
D
=4.1A
V
GS
=1.8V, I
D
=1.9A
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
I
S
V
SD
---
I
S
=1.0A, V
GS
=0V
-
-
-
0.73
2.0
1.2
A
V
td
(on)
tr
td
(off)
tf
V
DD
=10V, I
D
=6.6A,
V
GS
=4.5V,
R
G
=6Ω
(Note 1,2)
-
-
-
-
14
10
30
7
-
-
-
-
ns
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
V
DS
=10V, I
D
=6.6A,
V
GS
=4.5V
(Note 1,2)
V
DS
=10V, V
GS
=0V,
f=1.0MHZ
-
-
-
-
-
-
4.1
1.1
0.7
400
54
40
-
-
-
-
-
-
pF
nC
I
DSS
I
GSS
V
DS
=20V, V
GS
=0V
V
GS
=+12V, V
DS
=0V
20
0.5
-
-
-
-
-
-
0.74
29
40
66
0.01
+10
-
1.2
36
52
92
1
+100
uA
nA
mΩ
V
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
o
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
4. The maximum current rating is package limited
December 31,2014-REV.02
Page 2
PPJS6414
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Diode Characteristics
December 31,2014-REV.02
Page 3
PPJS6414
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Threshold Voltage Variation with Temperature.
Fig.9 Capacitance vs. Drain-Source Voltage.
December 31,2014-REV.02
Page 4
PPJS6414
PART NO PACKING CODE VERSION
Part No Packing Code
PJS6414_S1_00001
Package Type
SOT-23 6L-1
Packing type
3K pcs / 7” reel
Marking
S14
Version
Halogen free
MOUNTING PAD LAYOUT
December 31,2014-REV.02
Page 5
Microchip MCU
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