PPJE8412
30V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
Features
30 V
Current
350mA
SOT-523
Unit : inch(mm)
R
DS(ON)
, V
GS
@4.5V, I
D
@350mA<1.2Ω
R
DS(ON)
, V
GS
@2.5V, I
D
@200mA<1.6Ω
R
DS(ON)
, V
GS
@1.8V, I
D
@80mA<2.3Ω
R
DS(ON)
, V
GS
@1.5V, I
D
@10mA<2.5Ω(typ.)
Specially Designed for Switch Load, PWM Application, etc.
ESD Protected 2KV HBM
Lead free in compliance with EU RoHS 2011/65/EU
directive
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case : SOT-523 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00007 ounces, 0.002 grams
Marking: E12
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T
a
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
R
θJA
LIMIT
o
UNITS
V
V
mA
mA
mW
mW/
o
C
o
30
+10
350
1400
300
2.4
-55~150
417
o
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient
(Note 3)
C
C/W
September 30,2015-REV.00
Page 1
PPJE8412
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BV
DSS
V
GS(th)
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
GS
=4.5V, I
D
=350mA
Drain-Source On-State Resistance
R
DS(on)
V
GS
=2.5V, I
D
=200mA
V
GS
=1.8V, I
D
=80mA
V
GS
=1.5V, I
D
=10mA
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
(Note 5)
o
SYMBOL
TEST CONDITION
MIN.
30
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.85
0.94
1.32
1.82
2.5
0.01
-
-
0.87
0.26
0.16
34
8.9
2.5
7.1
20
41
31
MAX.
-
1.1
1.2
1.6
2.3
-
1
+10
+1
-
-
-
-
-
-
-
-
-
-
UNITS
V
V
Ω
I
DSS
I
GSS
V
DS
=30V, V
GS
=0V
V
GS
=+8V, V
DS
=0V
V
GS
=+5V, V
DS
=0V
uA
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
tr
td
(off)
tf
V
DS
=15V, I
D
=350mA,
V
GS
=4.5V
(Note 1,2)
V
DS
=15V, V
GS
=0V,
f=1.0MHZ
V
DD
=15V, I
D
=80mA,
V
GS
=4.0V,
R
G
=6Ω
(Note 1,2)
nC
pF
ns
I
S
V
SD
---
I
S
=350mA, V
GS
=0V
-
-
-
0.88
350
1.3
mA
V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
4. The maximum current rating is package limited
5. Guaranteed by design, not subject to production testing.
September 30,2015-REV.00
Page 2
PPJE8412
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Diode Characteristics
September 30,2015-REV.00
Page 3
PPJE8412
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Threshold Voltage Variation with Temperature.
Fig.9 Capacitance vs. Drain-Source Voltage.
September 30,2015-REV.00
Page 4
PPJE8412
PART NO PACKING CODE VERSION
Part No Packing Code
PJE8412_R1_00001
Package Type
SOT-523
Packing type
4K pcs / 7” reel
Marking
E12
Version
Halogen free
MOUNTING PAD LAYOUT
September 30,2015-REV.00
Page 5
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