PPJC7472B
60V N-Channel Enhancement Mode MOSFET
Voltage
Features
RDS(ON) , VGS@10V, ID@600mA<3Ω
RDS(ON) , VGS@4.5V, ID@200mA<4Ω
Advanced Trench Process Technology
Specially Designed for Relay driver, Speed line drive, etc.
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std. (Halogen Free)
60 V
Current
250mA
SOT-323
Unit: inch(mm)
Mechanical Data
Case: SOT-323 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00018 ounces, 0.005 grams
Marking: C2B
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T
A
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
R
θJA
UNITS
V
V
mA
mA
mW
mW/
o
C
o
o
LIMIT
60
+30
250
1000
350
4
-55~150
357
o
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient
(Note 3)
C
C/W
June 12,2015-REV.00
Page 1
PPJC7472B
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
(Note 4)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
I
S
V
SD
---
I
S
=500mA, V
GS
=0V
-
-
-
0.9
500
1.5
mA
V
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
tr
td
(off)
tf
V
DS
=15V, I
D
=600mA,
V
GS
=4.5V
V
DS
=25V, V
GS
=0V,
f=1.0MHZ
V
DD
=10V, I
D
=600mA,
V
GS
=10V,
R
G
=6Ω
(Note 1,2)
o
SYMBOL
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
TEST CONDITION
V
GS
=0V,I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V,I
D
=600mA
V
GS
=4.5V,I
D
=200mA
V
DS
=60V,V
GS
=0V
V
GS
=+30V,V
DS
=0V
MIN.
60
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
1.8
1.3
1.7
-
-
0.82
0.53
0.22
34
11
3.0
2.7
21
3.8
18
MAX.
-
2.5
3
4
1
+100
-
-
-
-
-
-
-
-
-
-
UNITS
V
V
Ω
uA
nA
nC
pF
ns
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. mounted on a 1 inch square pad of copper
4. Guaranteed by design, not subject to production testing
June 12,2015-REV.00
Page 2
PPJC7472B
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Diode Characteristics
June 12,2015-REV.00
Page 3
PPJC7472B
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Breakdown Voltage Variation vs. Temperature
Fig.9 Threshold Voltage Variation with Temperature.
Fig.10 Capacitance vs. Drain-Source Voltage.
June 12,2015-REV.00
Page 4
PPJC7472B
PART NO PACKING CODE VERSION
PART NO PACKING CODE
Package Type
SOT-323
SOT-323
Packing type
3K pcs / 7” reel
12K pcs / 13” reel
Marking
C2B
C2B
Version
Halogen free
Halogen free
PJC7472B_R1_00001
PJC7472B_R2_00001
MOUNTING PAD LAYOUT
June 12,2015-REV.00
Page 5
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