PPJW4P06A
60V P-Channel Enhancement Mode MOSFET
Voltage
Features
R
DS(ON)
, V
GS
@-10V,I
D
@-4.0A<110mΩ
R
DS(ON)
, V
GS
@-4.5V,I
D
@-2.0 A<130mΩ
High switching speed
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
1
-60 V
Current
-4.0 A
SOT-223
(Halogen Free)
Mechanical Data
Case : SOT-223 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.043 ounces, 0.123 grams
Marking: W4P06A
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
T
A
=25
o
C
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
(Note 1)
o
SYMBOL
V
DS
V
GS
T
A
=70
o
C
T
A
=25
o
C
T
A
=70
o
C
P
D
E
AS
T
J
,T
STG
R
θJA
I
D
I
DM
LIMIT
UNITS
V
V
A
A
W
mJ
o
-60
+20
-4
-3.2
-16
3.1
2
12.8
-55~150
40.3
o
Single Pulse Avalanche Energy
(Note 5)
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient
(Note 6)
Limited only By Maximum Junction Temperature
C
C/W
July 7,2015-REV.00
Page 1
PPJW4P06A
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
(Note 7)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
I
S
V
SD
---
I
S
=-1A,V
GS
=0V
-
-
-
-0.76
-4
-1.0
A
V
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
t
r
td
(off)
t
f
V
DS
=-30V, I
D
=-4.0A,
V
GS
=-10V
(Note 1,2)
V
DS
=-30V, V
GS
=0V,
f=1.0MHZ
V
DS
=-30V,RL=30Ω
V
GS
=-10V, R
G
=6.2Ω
(Note 1,2)
o
SYMBOL
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
TEST CONDITION
V
GS
=0V,I
D
=-250uA
V
DS
=V
GS
,I
D
=-250uA
V
GS
=-10V,I
D
=-4.0A
V
GS
=-4.5V,I
D
=-2.0A
V
DS
=-60V,V
GS
=0V
V
GS
=+20V,V
DS
=0V
MIN.
-60
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-1.7
87
110
-
-
10
1.6
3
785
175
112
8
15
43
8.4
MAX.
-
-2.5
110
130
-1.0
+100
-
-
-
-
-
-
-
-
-
-
UNITS
V
V
mΩ
uA
nA
nC
pF
ns
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. The maximum current rating is package limited.
4. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency
and duty cycles to keep initial TJ =25°C.
5. The test condition is L=0.1mH, I
AS
=-16A, V
DD
=-25V, V
GS
=-10V
6. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. Mounted on a 1 inch
2
with 2oz.square pad of copper.
7. Guaranteed by design, not subject to production testing.
July 7,2015-REV.00
Page 2
PPJW4P06A
TYPICAL CHARACTERISTIC CURVES
Fig.1 Output Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Source-Drain Diode Forward Voltage
July 7,2015-REV.00
Page 3
PPJW4P06A
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8
Breakdown Voltage Variation vs. Temperature
Fig.9
Threshold Voltage Variation with Temperature
Fig.10 Capacitance vs. Drain-Source Voltage
Fig.11 Maximum Safe Operating Area
July 7,2015-REV.00
Page 4
PPJW4P06A
TYPICAL CHARACTERISTIC CURVES
Fig.12 Normalized Transient Thermal Impedance vs. Pulse Width
July 7,2015-REV.00
Page 5
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