PPJW4N10
100V N-Channel Enhancement Mode MOSFET
Voltage
Features
100 V
Current
4A
SOT-223
R
DS(ON)
, V
GS
@10V,I
D
@2A<258mΩ
R
DS(ON)
, V
GS
@6V,I
D
@1A<268mΩ
Low On-Resistance
Low input capacitance
Lead free in compliance with EU RoHS 2011/65/EU directive
Green molding compound as per IEC61249 Std.
(Halogen Free)
1
Mechanical Data
Case : SOT-223 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.043 ounces, 0.123 grams
Marking: W4N10
o
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
Power Dissipation
Continuous Drain Current
Power Dissipation
Power Dissipation
T
C
=25
o
C
T
C
=100
o
C
T
C
=25
o
C
T
C
=25
o
C
T
C
=100
o
C
T
A
=25
o
C
T
A
=70
o
C
T
A
=25
o
C
T
A
=70
o
C
Junction to Case
Junction to Ambient
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
I
D
P
D
T
J
,T
STG
R
θJC
R
θJA
LIMIT
UNITS
V
V
A
100
+20
4
2.5
8
8
3.2
2.5
2
3.1
2
-55~150
15.6
40.3
o
W
A
A
W
o
Operating Junction and Storage Temperature Range
Typical Thermal resistance
(Note 4,5)
C
C/W
Limited only By Maximum Junction Temperature
July 7,2015-REV.00
Page 1
PPJW4N10
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
(Note 6)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
I
S
V
SD
---
I
S
=1A,V
GS
=0V
-
-
-
0.78
4
1.2
A
V
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
t
r
td
(off)
t
f
V
DS
=60V, I
D
=4A,
V
GS
=10V
(Note 2,3)
V
DS
=25V, V
GS
=0V,
f=1.0MHZ
V
DS
=50V,RL=12.5Ω,
V
GS
=10V, R
G
=6Ω
(Note 2,3)
o
SYMBOL
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
TEST CONDITION
V
GS
=0V,I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
GS
=10V,I
D
=2A
V
GS
=6V,I
D
=1A
V
DS
=100V,V
GS
=0V
V
GS
=+20V,V
DS
=0V
MIN.
100
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
2.85
210
220
-
-
6.7
2.1
1.1
378
26
20
4.3
22
9.7
8.2
MAX.
-
3.5
258
268
1
+100
-
-
-
-
-
-
-
-
-
-
UNITS
V
V
mΩ
uA
nA
nC
pF
ns
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency
and duty cycles to keep initial TJ =25°C.
4. The maximum current rating is package limited
5. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. Mounted on a 1 inch
2
with 2oz.square pad of copper.
6. Guaranteed by design, not subject to production testing
July 7,2015-REV.00
Page 2
PPJW4N10
TYPICAL CHARACTERISTIC CURVES
Fig.1 Output Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Source-Drain Diode Forward Voltage
July 7,2015-REV.00
Page 3
PPJW4N10
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8
Breakdown Voltage Variation vs. Temperature
Fig.9
Threshold Voltage Variation with Temperature
Fig.10 Capacitance vs. Drain-Source Voltage
Fig.11 Maximum Safe Operating Area
July 7,2015-REV.00
Page 4
PPJW4N10
TYPICAL CHARACTERISTIC CURVES
Fig.12 Normalized Transient Thermal Impedance vs. Pulse Width
July 7,2015-REV.00
Page 5
Microchip MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
