PJ4N3KDW
30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• R
DS(ON)
, V
GS
@2.5V,I
DS
@1mA=7.0
• R
DS(ON)
, V
GS
@4.0V,I
DS
@10mA=5.0
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• The MOSFET elements are independent,eliminating interference
• Mounting cost and area can be cut in half
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems,Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• Low voltage drive (2.5V) makes this device ideal for portable
equipment
• ESD Protected 2KV HBM
• Lead free in comply with EU RoHS 2011/65/EU directives
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
• Case: SOT-363 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Weight: 0.0002 ounces, 0.006 grams
• Marking : 4N3
SOT-23
Absolute Maximum Ratings (T
A
=25
O
C )
P a r a m e te r
D ra i n-S o urc e Vo lta g e
Ga te - S o ur c e Vo lta g e e
C o nti nuo us D ra i n C ur r e nt
P uls e d D r a i n C ur re nt
(1 )
S ym b o l
V
DS
V
GS
I
I
T
A
=2 5
O
C
T
A
=7 5
O
C
D
Li mi t
30
+ 20
100
800
200
120
-5 5 to + 1 5 0
625
Uni ts
V
V
mA
mA
mW
O
DM
M a xi m um p o we r D i s s i p a ti o n
P
D
T
J
,T
S TG
R
J A
Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e Ra ng e
J unc ti o n- to A m b i e nt The r m a l Re s i s ta nc e
( P C B m o unte d )
2
C
O
C /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
October 23,2013-REV.04
PAGE . 1
PJ4N3KDW
ELECTRICAL CHARACTERISTICS (T
A
=25
O
C )
P a ra me te r
S ta ti c
D ra i n- S o ur c e B r e a k d o wn
Vo lta g e
Ga te Thr e s ho ld Vo lta g e
D ra i n- S o ur c e O n- S ta te
Re s i s ta nc e
D ra i n- S o ur c e O n- S ta te
Re s i s ta nc e
Ze ro G a te Vo lta g e D r a i n
C ur re nt
Gate Body Leakage
Forward Transconductance
D i o d e F o r wa rd Vo lta g e
Dynamic
To ta l Ga te C ha rg e
Tur n- On D e la y Ti m e
Ri s e Ti me
Tur n- Off D e la y Ti m e
F a ll t i me
Inp ut C a p a c i ta nc e
Outp ut C a p a c i ta nc e
Re ve r s e Tr a ns fe r
C a p a c i ta nc e
Q
g
td
( ON )
t
r
t d
(OF F )
t
f
C
iss
C
oss
C
rss
V
D S
= 5 V, V
G S
=0 V
f=1 .0 MH
Z
V
DD
=5V , R
L
=500
I
D
=10mA , V
GEN
=5V
R
G
=10
V
D S
= 1 5 V, I
D
=1 0 mA
V
GS
=4.5V
-
-
-
-
-
-
-
-
-
30
8 .5
84
32
25
8
2.5
0 .8
35
12
ns
100
40
35
12
5
pF
nC
B V
DSS
V
G S ( t h)
R
D S ( o n)
R
D S ( o n)
I
D S S
I
G S S
g
fS
V
SD
V
G S
= 0 V, I
D
=1 0 uA
V
D S
= 3 .0 V, I
D
=1 0 0 uA
V
GS
=2.5V, I
D
=1mA
V
GS
=4.0V, I
D
=10mA
V
DS
=30V, V
GS
=0V
V
GS
=+ 2 0 V, V
D S
= 0 V
V
D S
= 3 V, I
D
=1 0 mA
I
S
= 11 5 mA , V
G S
=0 V
30
0 .8
-
-
-
-
10
-
-
-
-
-
-
-
-
0 .7 8
-
1 .5
7 .0
5.0
1
5
-
1 .3
uA
uA
mS
V
V
V
S ymb o l
Te s t C o nd i ti o n
Mi n.
Typ .
Ma x.
Uni ts
October 23,2013-REV.04
PAGE . 2
PJ4N3KDW
-I
DS
-Drain-to-Source Current(A)
-
I
DS
-Drain-to-S ource Current(A)
1.2
1
0.8
0.6
0.4
0.2
0
0
1
2
3
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
4
4V
3.5V
3V
V
DS
=5V
T
J
=25℃
T
J
=125℃
2.5V
2V
VGS=1.2V
4
5
V
DS
- Drain-to-Source Voltage(V)
V
GS
-Gate-to-Source Voltage(V)
Fig.1 On-Region Characteristics.
R
DS
(on)- On-Resistance
(Normalized)
4.0
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
Fig.2 Transfer Characteristics
R
DS
(on)- On-Resistance(Ω)
3.5
3.0
2.5
2.0
1.5
1.0
0.0
0.2
0.4
V
GS
= 3V
V
GS
= 2.5V
V
GS
=10V,
I
D
=10mA
V
GS
=4.5V, I
D
=50mA
V
GS
=2.5V, I
D
=10mA
V
GS
= 4V
0.6
0.8
1.0
I
DS
-Drain-to-Source Current(A)
25
50
Temperature (℃)
75
100
125
150
175
Fig.3 On-Resistsnce vs. Drain current
Fig.4
On-Resistsnce
vs. Junction
5
R
DS
(on)- On-Resistanc
esistance(Ω)
I
D
=50mA
4
I
S
-Source to-Drain Curre
in Current(A)
10
1
0.1
0 01
0.01
0.001
0.0001
0.00001
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
V
GS
= 0V
T
J
=125℃
T
J
=125℃
3
T
J
=25℃
2
T
J
=25℃
1
0
2
4
6
8
10
V
GS
-Gate-to-Source Voltage(V)
v
SD
-Source-to-Drain voltage(V)
Fig.5 On-Resistance Variation with VGS.
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
50
Fig.6 Body Dlode Characterlslcs
I
D
=100μA
BVDSS-Breakdown Voltage
(Normalized)
1.2
I
D
=10mA
1.1
V
th
-G-S Variance
1.0
0.9
Temperature (℃)
75
100
125
150
175
0.8
0
25
50
75
100
125
150
175
Temperature (℃)
Fig.8 Breakdown Voltage Variation vs. Temperature
Fig.7 Threshold Voltage Variation with Temperature
October 23,2013-REV.04
PAGE . 3
PJ4N3KDW
MOUNTING PAD LAYOUT
0.018
(0.45)
0.020
(0.50)
0.026
(0.65)
0.026
(0.65)
ORDER INFORMATION
• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
October 23,2013-REV.04
0.075
(1.90)
PAGE . 4
PJ4N3KDW
Part No_packing code_Version
PJ4N3KDW_R1_00001
PJ4N3KDW_R2_00001
For example :
RB500V-40_R2_00001
Part No.
Serial number
Version code means HF
Packing size code means 13"
Packing type means T/R
Packing Code
XX
Packing type
Tape and Ammunition Box
(T/B)
Tape and Reel
(T/R)
Bulk Packing
(B/P)
Tube Packing
(T/P)
Tape and Reel (Right Oriented)
(TRR)
Tape and Reel (Left Oriented)
(TRL)
FORMING
1
st
Code
A
R
B
T
S
L
F
Packing size code
N/A
7"
13"
26mm
52mm
PANASERT T/B CATHODE UP
(PBCU)
PANASERT T/B CATHODE DOWN
(PBCD)
Version Code
XXXXX
2
nd
Code
HF or RoHS
1
st
Code 2
nd
~5
th
Code
0
1
2
X
Y
U
D
HF
RoHS
0
1
serial number
serial number
October 23,2013-REV.04
PAGE . 5
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