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PJD1NA60_L2_00001

产品描述Power Field-Effect Transistor
产品类别分立半导体    晶体管   
文件大小502KB,共8页
制造商强茂(PANJIT)
官网地址http://www.panjit.com.tw/

PANJIT 是一家全球 IDM,提供广泛的产品组合,包括 MOSFET、肖特基二极管、SiC 器件、双极结型晶体管和电桥等。公司旨在满足客户在汽车、电源、工业、计算、消费和通信等各种应用领域的需求。他们的愿景是通过质量可靠、节能高效的产品为世界提供电源,为人们带来更绿色、更智能的未来。公司核心价值观包括创新、责任、以客户为中心、学习与成长、相互信任和协作。

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PJD1NA60_L2_00001概述

Power Field-Effect Transistor

PJD1NA60_L2_00001规格参数

参数名称属性值
厂商名称强茂(PANJIT)
包装说明SMALL OUTLINE, R-PSSO-G2
Reach Compliance Codecompliant
配置SINGLE
最小漏源击穿电压600 V
最大漏极电流 (ID)1 A
最大漏源导通电阻14 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码TO-252AA
JESD-30 代码R-PSSO-G2
元件数量1
端子数量2
工作模式ENHANCEMENT MODE
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型N-CHANNEL
表面贴装YES
端子形式GULL WING
端子位置SINGLE
晶体管元件材料SILICON

PJD1NA60_L2_00001文档预览

PPJN1NA60
/ PJW1NA60 / PJU1NA60 / PJD1NA60
600V N-Channel MOSFET
Voltage
Features
R
DS(ON)
, V
GS
@10V,I
D
@0.5A<14Ω
High switching speed
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std. (Halogen Free)
TO-252AA
TO-251AA
TO-92
SOT-223
600 V
Current
1A
Mechanical Data
Case : TO-251AA,TO-252AA, SOT-223, TO-92 Package
Terminals : Solderable per MIL-STD-750, Method 2026
TO-251AA Approx. Weight : 0.0104 ounces, 0.297grams
TO-252AA Approx. Weight : 0.0104 ounces, 0.297grams
SOT-223 Approx. Weight : 0.043 ounces, 0.123grams
TO-92 Approx. Weight : 0.007 ounces, 0.196grams
o
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy
(Note 1)
Power Dissipation
T
C
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
27
P
D
0.216
1
4
50
3.3
0.026
-55~150
3
0.024
TO-251AA
TO-252AA
SOT-223
TO-92
UNITS
V
V
600
+30
0.3
1.2
A
A
mJ
W
W/
o
C
o
Operating Junction and
Storage Temperature Range
Typical Thermal resistance
-
-
Junction to Case
Junction to Ambient
T
J
,T
STG
C
R
θJC
R
θJA
4.63
110
-
37.9
(Note 4)
-
140
o
C/W
Limited only By Maximum Junction Temperature
January 14,2016-REV.02
Page 1
PPJN1NA60
/ PJW1NA60 / PJU1NA60 / PJD1NA60
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Diode Forward Voltage
Dynamic
(Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
trr
Qrr
---
---
V
GS
=0V, I
S
=1A
dI
F
/ dt=100A/us
(Note 2)
-
-
-
-
-
-
190
0.53
1
4
-
-
A
A
ns
uC
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
t
r
td
(off)
t
f
V
DS
=480V, I
D
=1A,
V
GS
=10V
(Note 2,3)
V
DS
=25V, V
GS
=0V,
f=1.0MHZ
V
DD
=300V, I
D
=1A,
R
G
=25Ω
(Note 2,3)
-
-
-
-
-
-
-
-
-
-
3.3
1.1
1
95
21
0.3
5
20
8
25
-
-
-
-
-
-
-
-
-
-
ns
pF
nC
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
V
SD
V
GS
=0V,I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
GS
=10V,I
D
=0.5A
V
DS
=600V,V
GS
=0V
V
GS
=+30V,V
DS
=0V
I
S
=1A,V
GS
=0V
600
2
-
-
-
-
-
3.34
11.1
0.02
+10
0.85
-
4
14
1.0
+100
1.4
V
V
Ω
uA
nA
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
o
NOTES :
1. L=30mH, I
AS
=1.77A, V
DD
=50V, R
G
=25 ohm, Starting T
J
=25
o
C
2. Pulse width<300us, Duty cycle<2%
3. Essentially independent of operating temperature typical characteristics.
4. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
5. Guaranteed by design, not subject to production testing.
January 14,2016-REV.02
Page 2
PPJN1NA60
/ PJW1NA60 / PJU1NA60 / PJD1NA60
TYPICAL CHARACTERISTIC CURVES
Fig.1 Output Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction Temperature
Fig.5 Capacitance vs. Drain-Source Voltage
Fig.6 Source-Drain Diode Forward Voltage
January 14,2016-REV.02
Page 3
PPJN1NA60
/ PJW1NA60 / PJU1NA60 / PJD1NA60
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate Charge
Fig.8 BV
DSS
vs. Junction Temperature
Fig.9
Threshold Voltage Variation with Temperature
Fig.10 Maximum Safe Operating Area
Fig.11 Maximum Safe Operating Area
Fig.12 Maximum Safe Operating Area
January 14,2016-REV.02
Page 4
PPJN1NA60
/ PJW1NA60 / PJU1NA60 / PJD1NA60
TYPICAL CHARACTERISTIC CURVES
Fig.13 PJU/PJD Normalized Transient Thermal Impedance vs. Pulse Width
Fig.14 PJW1NA60 Normalized Transient Thermal Impedance vs. Pulse Width
Fig.15 PJN1NA60 Normalized Transient Thermal Impedance vs. Pulse Width
January 14,2016-REV.02
Page 5
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