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MMDT3904TB6-R2-10001

产品描述Transistor
产品类别分立半导体    晶体管   
文件大小182KB,共6页
制造商强茂(PANJIT)
官网地址http://www.panjit.com.tw/

PANJIT 是一家全球 IDM,提供广泛的产品组合,包括 MOSFET、肖特基二极管、SiC 器件、双极结型晶体管和电桥等。公司旨在满足客户在汽车、电源、工业、计算、消费和通信等各种应用领域的需求。他们的愿景是通过质量可靠、节能高效的产品为世界提供电源,为人们带来更绿色、更智能的未来。公司核心价值观包括创新、责任、以客户为中心、学习与成长、相互信任和协作。

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MMDT3904TB6-R2-10001概述

Transistor

MMDT3904TB6-R2-10001规格参数

参数名称属性值
厂商名称强茂(PANJIT)
Reach Compliance Codecompliant

MMDT3904TB6-R2-10001文档预览

MMDT3904TB6
DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
FEATURES
• NPN epitaxial silicon, planar design
• Collector-emitter voltage VCE = 40V
• Collector current IC = 200mA
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.052(1.30)
0.043(1.10)
0.067(1.70)
0.059(1.50)
40 Volts
POWER
225 mWatts
SOT-563
0.011(0.27)
0.006(0.17)
0.044(1.10)
0.035(0.90)
0.067(1.70)
0.059(1.50)
0.024(0.60)
0.019(0.50)
MECHANICAL DATA
• Case: SOT-563, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.003 gram
• Marking: TX
0.007(0.17)
0.002(0.07)
0.012(0.30)
0.004(0.10)
ABSOLUTE RATINGS
Parameter
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
40
60
6.0
200
Units
V
V
V
mA
THERMAL CHARACTERISTICS
Parameter
Max Power Dissipation (Note 1)
Thermal Resistance , Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
P
TOT
R
θ
JA
T
J
T
STG
Value
225
625
-55 to 150
-55 to 150
Units
mW
O
C/W
O
C
C
O
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
STAD-MAR.13.2008
PAGE . 1
MMDT3904TB6
ELECTRICAL CHARACTERISTICS
P a ra me te r
C o lle c to r - E mi tte r B re a k d o wn Vo lta g e
C o lle c to r - B a s e B re a k d o wn Vo lta g e
E mi tte r - B a s e B re a k d o wn Vo lta g e
B a s e C ut o f f C ur r e nt
C o l l e c t o r C ut o f f C ur r e nt
I
S ym b o l
V
(B R)C E O
V
(B R)C B O
V
(B R)E B O
I
Bl
Te s t C o n d i t i o n
I
C
=1 .0 mA , I
B
=0
I
C
= 1 0 uA , I
E
= 0
I
E
= 1 0 uA , I
C
= 0
V
CE
=3 0 V, V
EB
=3 .0 V
V
CE
=3 0 V, V
EB
=3 .0 V
I
I
I
I
I
=0 .1 mA , V
CE
=1 .0 V
=1 .0 mA , V
CE
=1 .0 V
C
=1 0 mA , V
CE
=1 .0 V
C
=5 0 mA , V
CE
=1 .0 V
C
=1 0 0 mA , V
CE
=1 .0 V
C
C
M i n.
40
60
6 .0
-
-
40
70
100
60
30
-
0 .6 5
-
-
-
-
-
-
-
Ty p .
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
M a x.
-
-
-
50
50
-
-
300
-
-
0 .2
0 .3
0 .8 5
0 .9 5
4 .0
8 .0
35
35
200
50
U ni t s
V
V
V
nA
nA
CEX
D C C ur r e nt G a i n ( N o t e 2 )
h
FE
-
C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e
(No te 2 )
B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e
(No te 2 )
C o l l e c t o r - B a s e C a p a c i t a nc e
E m i t t e r - B a s e C a p a c i t a nc e
D e l a y Ti m e
R i s e Ti m e
S t o r a g e Ti m e
F a l l Ti m e
V
C E ( S AT)
V
B E ( S AT)
C
CBO
C
EBO
td
tr
ts
tf
I
C
=1 0 mA , I
B
=1 .0 mA
I
C
=5 0 mA , I
B
=5 .0 mA
I
C
=1 0 mA , I
B
=1 .0 mA
I
C
=5 0 mA , I
B
=5 .0 mA
V
CB
=5 V, I
E
=0 , f=1 MHz
V
CB
=0 .5 V, I
C
=0 , f=1 MHz
V
CC
=3 V,V
BE
=-0 .5 V,
I
C
=1 0 mA ,I
B
=1 .0 mA
V
CC
=3 V,V
BE
=-0 .5 V,
I
C
=1 0 mA ,I
B
=1 .0 mA
V
CC
=3 V,I
C
=1 0 mA
I
B
1 =I
B
2 =1 .0 mA
V
CC
=3 V,I
C
=1 0 mA
I
B
1 =I
B
2 =1 .0 mA
V
V
pF
pF
ns
ns
ns
ns
Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+3V
275
W
+10.9V
0
-0 .5 V
< 1ns
300 ns
D uty C ycle ~ 2.0%
10K
W
C S * < 4pF
D elay and R ise Tim e Equivalent Test C ircuit
+3V
275
W
+10.9V
0
-9.1V
< 1ns
10K
W
1N916
10 to 500us
Duty Cycle ~ 2.0%
C S * < 4pF
Storage and Fall Tim e Equivalent Test Circuit
STAD-MAR.13.2008
PAGE . 2
MMDT3904TB6
ELECTRICAL CHARACTERISTICS CURVE
300
250
200
T
J
=150 C
o
1.400
V
CE
=1V
1.200
1.000
T
J
=100 C
o
V
BE
(V)
h
FE
0.800
0.600
0.400
T
J
=25
o
C
T
J
=100
o
C
150
100
50
0
0.01
0.1
T
J
=25
o
C
0.200
1
10
100
1000
0.000
0.01
T
J
=150
o
C
V
CE
=1V
0.1
1
10
100
1000
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Fig. 2. Typical VBE vs. Collector Current
Fig. 1. Typical h
FE
vs. Collector Current
1.000
1.0
T
J
=25
o
C
I
C
/ I
B
=10
V
CE
(sat)(mV)
T
J
=150
o
C
V
BE
(sat) (V)
T
J
=100 C
o
0.100
T
J
=25
o
C
T
J
=150
o
C
I
C
/ I
B
=10
0.010
0.01
0.1
1
10
100
1000
0.1
0.01
0.1
1.0
10
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Fig. 3. Typical V
CE (sat)
vs. Collector Current
Fig. 4. Typical V
BE(sat)
vs Collector Current
10
C
IB
(EB)
Capacitance (pF)
T
J
=150 C
o
C
OB
(CB)
1
0.1
1
10
100
Reverse Voltage, V
R
(V)
Fig. 5. Typical Capacitances vs. Reverse Voltage
STAD-MAR.13.2008
PAGE . 3
MMDT3904TB6
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 4K per 7" plastic Reel
T/R - 10K per 13" plastic Reel
STAD-MAR.13.2008
PAGE . 4
MMDT3904TB6
Part No_packing code_Version
MMDT3904TB6_R1_00001
MMDT3904TB6_R2_00001
For example :
RB500V-40_R2_00001
Part No.
Serial number
Version code means HF
Packing size code means 13"
Packing type means T/R
Packing Code
XX
Packing type
Tape and Ammunition Box
(T/B)
Tape and Reel
(T/R)
Bulk Packing
(B/P)
Tube Packing
(T/P)
Tape and Reel (Right Oriented)
(TRR)
Tape and Reel (Left Oriented)
(TRL)
FORMING
1
st
Code
A
R
B
T
S
L
F
Packing size code
N/A
7"
13"
26mm
52mm
PANASERT T/B CATHODE UP
(PBCU)
PANASERT T/B CATHODE DOWN
(PBCD)
Version Code
XXXXX
2
nd
Code
HF or RoHS
1
st
Code 2
nd
~5
th
Code
0
1
2
X
Y
U
D
HF
RoHS
0
1
serial number
serial number
STAD-MAR.13.2008
PAGE .
5
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