2N7002KDW
60V N-Channel MOSFET
Features
■
■
■
■
■
■
High density cell design for Low R
DS
（
on
）
Rugged and reliable
High saturation current capability
ESD protected up to 2KV
SOT-363 package
RoHS compliant
Package: SOT-363
Applications
■
■
Load Switch for Portable Devices
DC/DC Converters
Schematic Diagram
Absolute Maximum Ratings
(T
A
=25°C
unless
otherwise specified)
Parameter
Drain-Source voltage
Gate-Source Voltage
Drain Current-Continuous
Power Dissipation (note 2)
Thermal Resistance from Junction to Ambient
Storage Temperature
Junction Temperature
Symbol
V
DSS
V
GS
I
D(DC)
P
D
R
θJA
T
j
T
stg
Value
60
20
340
150
833
150
-55 ~+150
Units
V
mA
mW
°C/W
°C
1/4
2N7002KDW
60V N-Channel MOSFET
Electrical Characteristics
(T
A
=25°C
unless
otherwise specified)
Parameter
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage*
Zero Gate Voltage Drain Current
Gate –Source leakage current
Drain-Source On-Resistance*
Diode Forward Voltage
Recovered charge
Dynamic Characteristics**
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics**
Turn-On Delay Time
Turn-Off Delay Time
Reverse recovery Time
GATE-SOURCE ZENER DIODE
Gate-Source Breakdown Voltage
Symbol
V
DS
V
GS(th)
I
DSS
I
GSS1
R
DS(on)
V
SD
Q
r
Test Condition
V
GS
= 0V, I
D
=250µA
V
DS
=V
GS
, I
D
=1mA
V
DS
=48V,V
GS
= 0V
V
GS
=±20V, V
DS
= 0V
V
GS
= 4.5V, I
D
=200mA
V
GS
=10V,I
D
=500mA
V
GS
=0V, I
S
=300mA
V
GS
=0V,I
S
=300mA,V
R
=25V,
dl
s
/d
t
=-100A/µs
Min
60
1
Typ
Max
Units
V
2.5
1
±10
5.3
5
1.5
30
V
µA
Ω
Ω
V
nC
C
iss
C
oss
C
rss
V
DS
=10V,V
GS
=0V,f =1MHz
40
30
10
pF
pF
pF
t
d(on)
t
d(off)
t
rr
V
GS
=10V,V
DD
=50V,R
G
=50Ω,
R
GS
=50Ω, R
L
=250Ω
V
GS
=0V,I
S
=300mA,V
R
=25V,
dl
s
/d
t
=-100A/µs
30
10
10
15
15
ns
ns
ns
BV
GSO
I
gs
=±1mA (Open Drain)
±21.5
±30
V
Notes :
*Pulse Test : Pulse Width
≤300µs,
Duty Cycle
≤2%.
**These parameters have no way to verify.
2/4
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