PPJD14P10A
100V P-Channel Enhancement Mode MOSFET
Voltage
Features
R
DS(ON)
, V
GS
@-10V,I
D
@-7A<140mΩ
R
DS(ON)
, V
GS
@-4.5V,I
D
@-3A<170mΩ
High switching speed
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
TO-252
-100 V
Current
-14 A
(Halogen Free)
Mechanical Data
Case:TO-252 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0104 ounces, 0.297grams
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
Power Dissipation
Continuous Drain Current
Power Dissipation
Power Dissipation
T
C
=25
o
C
T
C
=100
o
C
T
C
=25
o
C
T
C
=25
o
C
T
C
=100
o
C
T
A
=25
o
C
T
A
=70
o
C
T
A
=25
o
C
T
A
=70
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
I
D
P
D
E
AS
T
J
,T
STG
R
θJC
R
θJA
LIMIT
o
UNITS
V
V
A
-100
+20
-14
-9
-40
60
24
-2.5
-2.0
2.0
1.3
20
-55~150
2.1
62.5
o
W
A
A
W
mJ
o
Single Pulse Avalanche Energy
(Note 6)
Operating Junction and Storage Temperature Range
Typical Thermal resistance
(Note 4,5)
C
Junction to Case
Junction to Ambient
C/W
Limited only By Maximum Junction Temperature
July 21,2015-REV.00
Page 1
PPJD14P10A
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
(Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Reverse Recovery Time
I
S
V
SD
---
I
S
=-1A,V
GS
=0V
-
-
-
-0.8
-14
-1.2
A
V
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
t
r
td
(off)
t
f
V
DS
=-50V, I
D
=-7A,
V
GS
=-10V
(Note 1,2)
V
DS
=-30V, V
GS
=0V,
f=1.0MHZ
V
DS
=-30V,ID=-1A,
V
GS
=-10V, R
G
=6.2Ω
(Note 1,2)
o
SYMBOL
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
TEST CONDITION
V
GS
=0V,I
D
=-250uA
V
DS
=V
GS
,I
D
=-250uA
V
GS
=-10V,I
D
=-7A
V
GS
=-4.5V,I
D
=-3A
V
DS
=-100V,V
GS
=0V
V
GS
=+20V,V
DS
=0V
MIN.
-100
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-2.0
115
130
-
-
40.7
7.8
6.4
2298
136
92
28
12
151
46
MAX.
-
-3.0
140
170
-1.0
+100
-
-
-
-
-
-
-
-
-
-
UNITS
V
V
mΩ
uA
nA
nC
pF
ns
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency
and duty cycles to keep initial TJ =25°C.
4. The maximum current rating is package limited
5. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. Mounted on a 1 inch
2
with 2oz.square pad of copper
6. L=0.1mH, I
AS
=-20A, V
GS
=-10V, V
DS
=-25V, R
G
=25 ohm, Starting T
J
=25
o
C
7. Guaranteed by design, not subject to production testing.
July 21,2015-REV.00
Page 2
PPJD14P10A
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Diode Characteristics
July 21,2015-REV.00
Page 3
PPJD14P10A
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Breakdown Voltage Variation vs. Temperature
Fig.9 Threshold Voltage Variation with Temperature.
Fig.10 Capacitance vs. Drain-Source Voltage.
Fig.11 Maximum Safe Operating Area
July 21,2015-REV.00
Page 4
PPJD14P10A
TYPICAL CHARACTERISTIC CURVES
Fig.12 Normalized Thermal Transient Impedance
July 21,2015-REV.00
Page 5
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