BC847BS-AU
NPN GENERAL PURPOSE DUAL TRANSISTOR
VOLTAGE
FEATURES
• General purpose amplifier applications
• PNP epitaxial silicon, planar design
• Lead free in comply with EU RoHS 2011/65/EU directives
• Green molding compound as per IEC61249 Std. .
(Halogen Free)
• Acqire quality system certificate : TS16949
•
AEC-Q101 qualified
0.030(0.75)
0.021(0.55)
45 Volts
POWER
150 mWatts
0.087(2.20)
0.074(1.90)
0.010(0.25)
0.018(0.45)
0.006(0.15)
0.010(0.25)
0.003(0.08)
0.040(1.00)
0.031(0.80)
0.044(1.10)
MAX.
0.054(1.35)
0.045(1.15)
MECHANICAL DATA
• Case : SOT-363, Plastic
• Terminals : Solderable per MIL-STD-750, Method 2026
• Approx. Weight : 0.006 gram
0.056(1.40)
0.047(1.20)
0.012(0.30)
0.005(0.15)
ABSOLUTE MAXIMUM RA
TINGS
Parameter
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - C ontinuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
45
50
6
100
0.004(0.10)
0.000(0.00)
• Marking : 47S
Units
V
V
V
mA
THERMAL CHARACTERISTICS
Parameter
Total Device Dissipation
Per Device FR-5 Board (Note 1)T
A
=25
O
C
Derate above 25
O
C
Thermal Resistance , Junction to Ambient (Note 2)
Junction Temperature
Storage Temperature
Symbol
P
D
R
JA
T
J
T
STG
Value
300
150
3
550
-55 to 150
-55 to 150
Units
mW
mW
mW/
O
C
O
C/W
O
O
Note : 1.FR-5 board 1 x 0.75 x 0.062 in.
2.Mounted on an FR4 PCB, single-sided copper, mini pad.
April 3,2013-REV.04
PAGE . 1
0.087(2.20)
0.078(2.00)
C
C
BC847BS-AU
ELECTRICAL CHARACTERISTICS (T
J
=25
O
C, unless otherwise noted)
P a r a me te r
OF F C HA RA C TE RIS TIC S
C o lle c to r - E mi tte r B r e a k d o wn V o lta g e
C o lle c to r - E mi tte r B r e a k d o wn V o lta g e
C o lle c to r - B a s e B re a k d o wn V o lta g e
E m i tte r - B a s e B re a k d o wn Vo lta g e
C o lle c to r C uto ff C ur re nt
ON C HA RA C TE RIS TIC S
D C C urre nt Ga i n
C o lle c to r - E mi tte r S a tur a ti o n Vo lta g e
B a s e - E m i tte r S a tura ti o n Vo lta g e
B a s e - E m i tte r Vo lta g e
S M A L L -S IGNA L C HA RA C TE RIS TIC S
C ur re nt- Ga i n- B a nd wi d th P ro d uc t
Outp ut C a p a c i ta nc e
No i s e F i g ur e
f
T
C
obo
NF
I
C
= 1 0 mA ,V
C E
= 5 V d c ,f= 1 0 0 MH
Z
V
C B
= 1 0 V, f= 1 M H
Z
I
C
= 0 .2 m A ,V
C E
= 5 V d c ,
R
S
= 2 k
, f= 1 . 0 k H
Z
,
B W=200H
Z
100
-
-
-
-
-
-
4 .5
10
MH
Z
pF
dB
h
FE
V
C E (S AT)
V
B E (S AT)
V
B E ( ON)
I
C
= 2 mA , V
C E
= 5 V
I
C
= 1 0 mA , I
B
= 0 . 5 mA
I
C
= 1 0 0 mA , I
B
= 5 m A
I
C
= 1 0 mA , I
B
= 0 . 5 mA
I
C
= 1 0 0 mA , I
B
= 5 m A
I
C
= 2 mA , V
C E
= 5 V
I
C
= 1 0 mA , V
C E
= 5 V
200
-
0 .6
0 .8
580
-
-
-
-
-
-
660
-
450
0 .2 5
0 .6
0 .9
1
700
770
-
V
V
mV
V
( B R) C E O
V
(B R) C E S
V
( B R) C B O
V
(B R) E B O
I
C B O
I
C
= 1 0 mA
I
C
= 1 0
A , V
E B
= 0
I
C
= 1 0
A
I
E
= 1
A
V
C B
= 3 0 V,
V
C B
= 3 0 V, T
A
= 1 5 0
O
C
45
50
50
6
-
-
-
-
-
-
-
-
-
-
15
5
V
V
V
V
nA
A
S ymb o l
Te s t C o nd i ti o n
Mi n.
Typ .
M a x.
Uni t
6
5
4
1
2
3
Fig.54
PAGE . 2
April 3,2013-REV.04
BC847BS-AU
ELECTRICAL CHARACTERISTICS CURVE
hFE, NORMALIZED DC CURRENT GAIN
2.0
1.5
1.0
V
CE
=10V
O
T
A
=25 C
V, VOLTAGE (VOLTS)
T
A
=25 C
0.8
O
V
BE
(sat) @ I
C
/I
B
=10
V
BE
(on) @ V
CE
=10V
1.0
0.8
0.6
0.6
0.4
0.4
0.3
0.2
V
CE
(sat) @ I
C
/I
B
=10
0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
0.2
I
C
, COLLECTOR CURRENT(mAdc)
Figure 1. Normalized DC Current Gain
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT(mAdc)
Figure 2. "Saturation" and " On " Voltages
1.0
2.0
T
A
=25 C
1.6
O
O
qVB,
TEMP ERAT URE COEF FICIE NT (mA/ C)
-55 C to 125 C
1.2
O
O
200mA
1.2
1.6
I
C
=
I
C
=
10mA
2
0mA
0.8
50mA
100mA
2.0
2.4
0.4
2.8
0
0.02
0.1
1.0
10
20
0.2
1.0
10
100
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Base-Emitter Temperature Coefficient
fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz)
10
400
300
200
7.0
C, CAPAC ITANCE (pF)
T
A
=25 C
Cio
O
50
30
100
80
60
40
30
20
0.5 0.7
V
CE
=10V
O
T
A
=25 C
Cob
2.0
1.0
0.4
0.6 0.8 1.0
2.0
4.0
6.0 8.0 10
20
40
1.0
2.0
3.0
5.0 7.0 10
20
30
50
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
I
C
, COLLECTOR CURRENT (mAdc)
Figure 6. Current-Gain-Bandwidth Product
April 3,2013-REV.04
PAGE . 3
BC847BS-AU
ELECTRICAL CHARACTERISTICS CURVE
1.0
r(t), TRANS IENT THERM AL
RESISTANCE(N ORMAL IZED)
D-0.5
0.2
0.1
0.1
0.05
0.02
P(pk)
t1
t2
Z
q
JA
(t)=r(t) R
q
JA
R
q
JA
=328
O
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
-TC=P
(pk)
R
q
JC
(t)
0.01
0.01
DUTY CYCLE, D-t1/t2
SINGEL PULSE
0.001
0
1.0
10
100
1.0K
t, TIME(ms)
Figure 7. Thermal Response
10K
100K
1.0M
-200
I
C
, COLLEC TOR CURRE NT (mA)
1s
3ms
-100
-50
T
A
=25 C
O
T
J
=25
O
C
-10
-5.0
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
The safe operating area curves indicate Ic-Vce limits of the
transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
O
The data of Figure 26 is based upon Tj(pk)=150 C; Tc or
Ta is variable depending upon conditions. Pulse curves are
O
valid for duty cycles to 10% prodided Tj(pk) < 150 C. Tj(pk)
may be calculated from the data in Figure 25. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by the secondary break-down.
-2.0
-1.0
-5.0
-10
-30
-45 -65 -100
V
CE
, COLLECTOR-EMITTER VOLTAGE(V)
Figure 8. Active Region Safe Operating Area
April 3,2013-REV.04
PAGE . 4
BC847BS-AU
MOUNTING PAD LAYOUT
0.018
(0.45)
0.020
(0.50)
0.026
(0.65)
0.026
(0.65)
ORDER INFORMA
TION
• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
0.075
(1.90)
April 3,2013-REV.04
PAGE . 5
MEMS传感器
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